Follow
Fei Yang
Fei Yang
University of Texas at Dallas | Texas Instruments
Verified email at utdallas.edu
Title
Cited by
Cited by
Year
Degradation assessment and precursor identification for SiC MOSFETs under high temp cycling
E Ugur, F Yang, S Pu, S Zhao, B Akin
IEEE Transactions on Industry Applications 55 (3), 2858-2867, 2019
1152019
Electrical performance advancement in SiC power module package design with kelvin drain connection and low parasitic inductance
F Yang, Z Wang, Z Liang, F Wang
IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (1), 84-98, 2018
922018
Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
F Yang, E Ugur, B Akin
IEEE Transactions on Power Electronics 35 (6), 6315-6331, 2019
802019
Design of a low parasitic inductance SiC power module with double-sided cooling
F Yang, Z Liang, ZJ Wang, F Wang
2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 3057-3062, 2017
672017
A new complete condition monitoring method for SiC power MOSFETs
E Ugur, C Xu, F Yang, S Pu, B Akin
IEEE Transactions on Industrial Electronics 68 (2), 1654-1664, 2020
662020
Turn-on Delay Based Real-Time Junction Temperature Measurement for SiC MOSFETs With Aging Compensation
F Yang, S Pu, C Xu, B Akin
IEEE Transactions on Power Electronics 36 (2), 1280-1294, 2020
592020
In situ Degradation Monitoring of SiC MOSFET Based on Switching Transient Measurement
S Pu, E Ugur, F Yang, B Akin
IEEE Transactions on Industrial Electronics 67 (6), 5092-5100, 2019
592019
Aging mechanisms and accelerated lifetime tests for SiC MOSFETs: An overview
S Pu, F Yang, BT Vankayalapati, B Akin
IEEE Journal of Emerging and Selected Topics in Power Electronics 10 (1 …, 2021
562021
A composite failure precursor for condition monitoring and remaining useful life prediction of discrete power devices
S Zhao, S Chen, F Yang, E Ugur, B Akin, H Wang
IEEE Transactions on Industrial Informatics 17 (1), 688-698, 2020
522020
Experimental Evaluation and Analysis of Switching Transient's Effect on Dynamic on-Resistance in GaN HEMTs
F Yang, C Xu, B Akin
IEEE Transactions on Power Electronics 34 (10), 10121-10135, 2019
522019
Using d–q Transformation to Vary the Switching Frequency for Interior Permanent Magnet Synchronous Motor Drive Systems
F Yang, AR Taylor, H Bai, B Cheng, AA Khan
IEEE Transactions on Transportation Electrification 1 (3), 277-286, 2015
522015
Design methodology of DC power cycling test setup for SiC MOSFETs
F Yang, E Ugur, B Akin
IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (4 …, 2019
502019
A practical on-board SiC MOSFET condition monitoring technique for aging detection
S Pu, F Yang, BT Vankayalapati, E Ugur, C Xu, B Akin
IEEE Transactions on Industry Applications 56 (3), 2828-2839, 2020
422020
Temperature-independent gate-oxide degradation monitoring of SiC MOSFETs based on junction capacitances
M Farhadi, F Yang, S Pu, BT Vankayalapati, B Akin
IEEE Transactions on Power Electronics 36 (7), 8308-8324, 2021
392021
Design of a fast dynamic on-resistance measurement circuit for GaN power HEMTs
F Yang, C Xu, E Ugur, S Pu, B Akin
2018 IEEE Transportation Electrification Conference and Expo (ITEC), 359-365, 2018
352018
Performance degradation of GaN HEMTs under accelerated power cycling tests
C Xu, F Yang, E Ugur, S Pu, B Akin
CPSS Transactions on power electronics and applications 3 (4), 269-277, 2018
342018
Health state estimation and remaining useful life prediction of power devices subject to noisy and aperiodic condition monitoring
S Zhao, Y Peng, F Yang, E Ugur, B Akin, H Wang
IEEE Transactions on Instrumentation and Measurement 70, 1-16, 2021
332021
Design of a high-efficiency minimum-torque-ripple 12-V/1-kW three-phase BLDC motor drive system for diesel engine emission reductions
F Yang, C Jiang, A Taylor, H Bai, A Kotrba, A Yetkin, A Gundogan
IEEE transactions on vehicular technology 63 (7), 3107-3115, 2014
332014
SiC MOSFET aging detection based on Miller plateau voltage sensing
S Pu, F Yang, E Ugur, C Xu, B Akin
2019 IEEE Transportation Electrification Conference and Expo (ITEC), 1-6, 2019
312019
Characterization of SiC trench MOSFETs in a low-inductance power module package
Z Wang, F Yang, SL Campbell, M Chinthavali
IEEE Transactions on Industry Applications 55 (4), 4157-4166, 2019
312019
The system can't perform the operation now. Try again later.
Articles 1–20