Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition J Tatebayashi, M Nishioka, Y Arakawa
Applied Physics Letters 78 (22), 3469-3471, 2001
356 2001 Room-temperature lasing in a single nanowire with quantum dots J Tatebayashi, S Kako, J Ho, Y Ota, S Iwamoto, Y Arakawa
Nature Photonics 9 (8), 501-505, 2015
213 2015 Size, shape, and strain dependence of the T Nakaoka, T Saito, J Tatebayashi, Y Arakawa
Physical Review B—Condensed Matter and Materials Physics 70 (23), 235337, 2004
160 2004 Low-threshold near-infrared GaAs–AlGaAs core–shell nanowire plasmon laser J Ho, J Tatebayashi, S Sergent, CF Fong, S Iwamoto, Y Arakawa
Acs Photonics 2 (1), 165-171, 2015
125 2015 III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs G Balakrishnan, J Tatebayashi, A Khoshakhlagh, SH Huang, A Jallipalli, ...
Applied physics letters 89 (16), 2006
114 2006 A nanowire-based plasmonic quantum dot laser J Ho, J Tatebayashi, S Sergent, CF Fong, Y Ota, S Iwamoto, Y Arakawa
Nano letters 16 (4), 2845-2850, 2016
81 2016 1.28 μm lasing from stacked InAs∕ GaAs quantum dots with low-temperature-grown AlGaAs cladding layer by metalorganic chemical vapor deposition J Tatebayashi, N Hatori, M Ishida, H Ebe, M Sugawara, Y Arakawa, ...
Applied Physics Letters 86 (5), 2005
81 2005 Narrow photoluminescence linewidth T Yang, J Tatebayashi, S Tsukamoto, M Nishioka, Y Arakawa
Applied physics letters 84 (15), 2817-2819, 2004
81 2004 Lasing characteristics of GaSb∕ GaAs self-assembled quantum dots embedded in an InGaAs quantum well J Tatebayashi, A Khoshakhlagh, SH Huang, G Balakrishnan, LR Dawson, ...
Applied Physics Letters 90 (26), 2007
72 2007 Tuning of T Nakaoka, T Saito, J Tatebayashi, S Hirose, T Usuki, N Yokoyama, ...
Physical Review B—Condensed Matter and Materials Physics 71 (20), 205301, 2005
72 2005 Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots P Jayavel, H Tanaka, T Kita, O Wada, H Ebe, M Sugawara, J Tatebayashi, ...
Applied physics letters 84 (11), 1820-1822, 2004
72 2004 Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids PS Wong, G Balakrishnan, N Nuntawong, J Tatebayashi, DL Huffaker
Applied Physics Letters 90 (18), 2007
65 2007 Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut S Ichikawa, K Shiomi, T Morikawa, D Timmerman, Y Sasaki, ...
Applied Physics Express 14 (3), 031008, 2021
63 2021 Formation and optical characteristics of strain-relieved and densely stacked GaSb∕ GaAs quantum dots J Tatebayashi, A Khoshakhlagh, SH Huang, LR Dawson, G Balakrishnan, ...
Applied Physics Letters 89 (20), 2006
63 2006 Area-controlled growth of InAs quantum dots and improvement of density and size distribution J Tatebayashi, M Nishioka, T Someya, Y Arakawa
Applied Physics Letters 77 (21), 3382-3384, 2000
63 2000 Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters J Tatebayashi, Y Ota, S Ishida, M Nishioka, S Iwamoto, Y Arakawa
Applied Physics Letters 100 (26), 2012
61 2012 Room temperature continuous wave lasing in InAs quantum-dot microdisks with air cladding T Ide, T Baba, J Tatebayashi, S Iwamoto, T Nakaoka, Y Arakawa
Optics express 13 (5), 1615-1620, 2005
59 2005 InAs∕ GaAs self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—effects of postgrowth annealing on stacked inas quantum dots J Tatebayashi, Y Arakawa, N Hatori, H Ebe, M Sugawara, H Sudo, ...
Applied physics letters 85 (6), 1024-1026, 2004
59 2004 Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers by metal organic chemicalvapour deposition J Tatebayashi, N Hatori, H Kakuma, H Ebe, H Sudo, A Kuramata, ...
Electronics Letters 39 (15), 1130-1131, 2003
59 2003 Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices J Tatebayashi, N Nuntawong, PS Wong, YC Xin, LF Lester, DL Huffaker
Journal of Physics D: Applied Physics 42 (7), 073002, 2009
57 2009 
D.L. Huffaker, Diana Huffaker, Diana L...Associate Vice President for Res, UT Arlington and Adjunct Professor of Electrical Engineering, UCLABestätigte E-Mail-Adresse bei uta.edu
