Christoph Henkel
Christoph Henkel
Bosch
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Titel
Zitiert von
Zitiert von
Jahr
A graphene-based hot electron transistor
S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ...
Nano letters 13 (4), 1435-1439, 2013
2342013
Atomic layer deposition of high- dielectrics on germanium reaching 0.5 nm equivalent oxide thickness
S Abermann, O Bethge, C Henkel, E Bertagnolli
Applied Physics Letters 94 (26), 262904, 2009
382009
Atomic layer deposition of high- dielectrics on germanium reaching 0.5 nm equivalent oxide thickness
S Abermann, O Bethge, C Henkel, E Bertagnolli
Applied Physics Letters 94 (26), 262904, 2009
382009
Atomic layer-deposited platinum in high-k/metal gate stacks
C Henkel, S Abermann, O Bethge, E Bertagnolli
Semiconductor science and technology 24 (12), 125013, 2009
322009
Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric
O Bethge, C Henkel, S Abermann, G Pozzovivo, M Stoeger-Pollach, ...
Applied surface science 258 (8), 3444-3449, 2012
312012
Thulium silicate interfacial layer for scalable high-k/metal gate stacks
ED Litta, PE Hellström, C Henkel, M Östling
IEEE transactions on electron devices 60 (10), 3271-3276, 2013
302013
A manufacturable process integration approach for graphene devices
S Vaziri, G Lupina, A Paussa, AD Smith, C Henkel, G Lippert, J Dabrowski, ...
Solid-state electronics 84, 185-190, 2013
302013
Scalable approach for vertical device integration of epitaxial nanowires
A Lugstein, M Steinmair, C Henkel, E Bertagnolli
Nano letters 9 (5), 1830-1834, 2009
302009
Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics
S Abermann, G Pozzovivo, J Kuzmik, C Ostermaier, C Henkel, O Bethge, ...
Electronics letters 45 (11), 570-572, 2009
252009
Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium
S Abermann, C Henkel, O Bethge, G Pozzovivo, P Klang, E Bertagnolli
Applied Surface Science 256 (16), 5031-5034, 2010
242010
Pt-assisted oxidation of (100)-Ge/high- interfaces and improvement of their electrical quality
C Henkel, O Bethge, S Abermann, S Puchner, H Hutter, E Bertagnolli
Applied Physics Letters 97 (15), 152904, 2010
232010
High-deposition-rate atomic layer deposition of thulium oxide from TmCp3 and H2O
ED Litta, PE Hellström, C Henkel, S Valerio, A Hallén, M Östling
Journal of the Electrochemical Society 160 (11), D538, 2013
222013
Process temperature dependent high frequency capacitance-voltage response of /germanium capacitors
O Bethge, S Abermann, C Henkel, CJ Straif, H Hutter, J Smoliner, ...
Applied Physics Letters 96 (5), 052902, 2010
222010
Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates
A Alexewicz, C Ostermaier, C Henkel, O Bethge, JF Carlin, L Lugani, ...
Thin Solid Films 520 (19), 6230-6232, 2012
192012
Ge p-MOSFETs With Scaled ALDGate Dielectrics
C Henkel, S Abermann, O Bethge, G Pozzovivo, P Klang, M Reiche, ...
IEEE transactions on electron devices 57 (12), 3295-3302, 2010
192010
Ge p-MOSFETs With Scaled ALDGate Dielectrics
C Henkel, S Abermann, O Bethge, G Pozzovivo, P Klang, M Reiche, ...
IEEE transactions on electron devices 57 (12), 3295-3302, 2010
192010
Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing
O Bethge, C Zimmermann, B Lutzer, S Simsek, J Smoliner, ...
Journal of Applied Physics 116 (21), 214111, 2014
182014
HfO2/Al2O3 bilayered high-k dielectric for passivation and gate insulator in 4H-SiC devices
M Usman, C Henkel, A Hallén
ECS Journal of Solid State Science and Technology 2 (8), N3087, 2013
182013
Tuning the electrical performance of Ge nanowire MOSFETs by focused ion beam implantation
T Burchhart, C Zeiner, A Lugstein, C Henkel, E Bertagnolli
Nanotechnology 22 (3), 035201, 2010
182010
Reduction of the PtGe/Ge electron Schottky-barrier height by rapid thermal diffusion of phosphorous dopants
C Henkel, S Abermann, O Bethge, G Pozzovivo, S Puchner, H Hutter, ...
Journal of The Electrochemical Society 157 (8), H815, 2010
152010
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