Siegfried Selberherr
Siegfried Selberherr
Institute for Microelectronics, TU Wien
Verified email at TUWien.ac.at - Homepage
Title
Cited by
Cited by
Year
Analysis and simulation of semiconductor devices
S Selberherr
Springer Science & Business Media, 2012
36082012
The stationary semiconductor device equations
P Markowich, S Selberherr (Editor)
Springer Science & Business Media, 1985
7641985
MOSFET models for VLSI circuit simulation: Theory and practice
N Arora, S Selberherr (Editor)
Springer Science & Business Media, 2012
7542012
SIMON - A simulator for single-electron tunnel devices and circuits
C Wasshuber, H Kosina, S Selberherr
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 1997
5111997
MINIMOS - A two-dimensional MOS transistor analyzer
S Selberherr, A Schütz, HW Pötzl
IEEE Journal of Solid-State Circuits 15 (4), 605-615, 1980
3921980
Intrinsic point defects, impurities, and their diffusion in silicon
P Pichler, S Selberherr (Editor)
Springer Science & Business Media, 2012
3722012
Computational single-electronics
C Wasshuber, S Selberherr (Editor)
Springer Science & Business Media, 2001
3542001
A review of hydrodynamic and energy-transport models for semiconductor device simulation
T Grasser, TW Tang, H Kosina, S Selberherr
Proceedings of the IEEE 91 (2), 251-274, 2003
3002003
Analysis and simulation of heterostructure devices
V Palankovsi, R Quay, S Selberherr (Editor)
Springer Science & Business Media, 2004
2262004
The effect of general strain on the band structure and electron mobility of silicon
E Ungersboeck, S Dhar, G Karlowatz, V Sverdlov, H Kosina, S Selberherr
IEEE Transactions on Electron Devices 54 (9), 2183-2190, 2007
2102007
MOS device modeling at 77 K
S Selberherr
IEEE Transactions on Electron Devices 36 (8), 1464-1474, 1989
2071989
The drift diffusion equation and its applications in MOSFET modeling
W Hänsch, S Selberherr (Editor)
Springer Science & Business Media, 2012
1842012
A CMOS IC for portable EEG acquisition systems
R Martins, S Selberherr, FA Vaz
IEEE Transactions on Instrumentation and Measurement 47 (5), 1191-1196, 1998
1791998
Semiconductor device modelling
R Baets, J Barker, JA Barnard, TM Barton, ME Clarke, A Cappy, ...
Springer Science & Business Media, 2012
1682012
Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices
M Nedjalkov, H Kosina, S Selberherr, C Ringhofer, DK Ferry
Physical Review B 70 (11), 115319, 2004
1652004
Simulation of critical IC fabrication processes using advanced physical and numerical methods
W Jüngling, P Pichler, S Selberherr, E Guerrero, HW Pötzl
IEEE Transactions on Electron Devices 32 (2), 156-167, 1985
1521985
Advanced physical models for silicon device simulation
A Schenk, S Selberherr (Editor)
Springer Science & Business Media, 1998
1471998
Physically based models of electromigration: From Black’s equation to modern TCAD models
RL De Orio, H Ceric, S Selberherr
Microelectronics Reliability 50 (6), 775-789, 2010
1372010
Finite boxes - A generalization of the finite-difference method suitable for semiconductor device simulation
AF Franz, GA Franz, S Selberherr, C Ringhofer, P Markowich
IEEE Transactions on Electron Devices 30 (9), 1070-1082, 1983
1291983
A temperature dependent model for the saturation velocity in semiconductor materials
R Quay, C Moglestue, V Palankovski, S Selberherr
Materials Science in Semiconductor Processing 3 (1-2), 149-155, 2000
1262000
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Articles 1–20