| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1077 | 2018 |
| Stripe‐geometry quantum well heterostructure AlxGa1− xAs‐GaAs lasers defined by defect diffusion DG Deppe, LJ Guido, N Holonyak Jr, KC Hsieh, RD Burnham, ... Applied physics letters 49 (9), 510-512, 1986 | 294 | 1986 |
| Carbon diffusion in undoped, n‐type, and p‐type GaAs BT Cunningham, LJ Guido, JE Baker, JS Major Jr, N Holonyak Jr, ... Applied physics letters 55 (7), 687-689, 1989 | 226 | 1989 |
| Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1− x As‐GaAs quantum‐well heterostructures LJ Guido, N Holonyak Jr, KC Hsieh, RW Kaliski, WE Plano, RD Burnham, ... Journal of applied physics 61 (4), 1372-1379, 1987 | 181 | 1987 |
| High-power disorder-defined coupled stripe Al/sub/ital y//Ga/sub 1/minus///sub/ital y//As-GaAs-In/sub/ital x//Ga/sub 1/minus///sub/ital x//As quantum well heterostructure lasers DC Hall, LJ Guido, P Gavrilovic, K Meehan, JE Williams, W Stutius Appl. Phys. Lett.;(United States) 55 (3), 1989 | 159 | 1989 |
| High-quality oxide/nitride/oxide gate insulator for GaN MIS structures B Gaffey, LJ Guido, XW Wang, TP Ma IEEE Transactions on Electron Devices 48 (3), 458-464, 2001 | 157 | 2001 |
| Erratum:“Stimulated emission and lasing in whispering gallery modes of GaN microdisk cavities”[Appl. Phys. Lett. 75, 166(1999)] S Chang, NB Rex, RK Chang, G Chong, LJ Guido Applied Physics Letters 75 (23), 3719, 1999 | 128* | 1999 |
| Stimulated emission and lasing in whispering-gallery modes of GaN microdisk cavities S Chang, NB Rex, RK Chang, G Chong, LJ Guido Applied physics letters 75 (2), 166-168, 1999 | 119 | 1999 |
| Atomic force microscopy study of electron beam written contamination structures M Amman, JW Sleight, DR Lombardi, RE Welser, MR Deshpande, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 74 | 1996 |
| Magnitude, origin, and evolution of piezoelectric optical nonlinearities in strained [111] B InGaAs/GaAs quantum wells AN Cartwright, DS McCallum, TF Boggess, AL Smirl, TS Moise, LJ Guido, ... Journal of applied physics 73 (11), 7767-7774, 1993 | 63 | 1993 |
| Depth‐dependent native‐defect‐induced layer disordering in AlxGa1− xAs‐GaAs quantum well heterostructures LJ Guido, N Holonyak Jr, KC Hsieh, JE Baker Applied Physics Letters 54 (3), 262-264, 1989 | 60 | 1989 |
| Low-threshold disorder-defined buried heterostructure strained-layer Al/sub y/Ga/sub 1-//sub y/As-GaAs-In/sub x/Ga/sub 1-//sub x/As quantum well lasers (lambdaapprox. 910 nm) JS Major Jr, LJ Guido, KC Hsieh, N Holonyak Jr, W Stutius, P Gavrilovic, ... Appl. Phys. Lett.;(United States) 54 (10), 1989 | 56 | 1989 |
| Low‐threshold disorder‐defined buried heterostructure strained‐layer AlyGa1− yAs‐GaAs‐InxGa1− xAs quantum well lasers (λ∼ 910 nm) JS Major Jr, LJ Guido, KC Hsieh, N Holonyak Jr, W Stutius, P Gavrilovic, ... Applied physics letters 54 (10), 913-915, 1989 | 54* | 1989 |
| Screening effects in (111) B AlGaAs‐InGaAs single quantum well heterostructures TS Moise, LJ Guido, RC Barker, JO White, AR Kost Applied physics letters 60 (21), 2637-2639, 1992 | 53 | 1992 |
| Carbon‐doped AlxGa1− xAs‐GaAs quantum well lasers LJ Guido, GS Jackson, DC Hall, WE Plano, N Holonyak Jr Applied physics letters 52 (7), 522-524, 1988 | 50 | 1988 |
| Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching C Youtsey, R McCarthy, R Reddy, K Forghani, A Xie, E Beam, J Wang, ... physica status solidi (b) 254 (8), 1600774, 2017 | 44 | 2017 |
| Electronic properties of arsenic-doped gallium nitride LJ Guido, P Mitev, M Gherasimova, B Gaffey Applied physics letters 72 (16), 2005-2007, 1998 | 44 | 1998 |
| Threshold lowering in GaN micropillar lasers by means of spatially selective optical pumping NB Rex, RK Chang, LJ Guido IEEE Photonics Technology Letters 13 (1), 1-3, 2001 | 43 | 2001 |
| High‐power gain‐guided coupled‐stripe quantum well laser array by hydrogenation GS Jackson, DC Hall, LJ Guido, WE Plano, N Pan, N Holonyak Jr, ... Applied physics letters 52 (9), 691-693, 1988 | 37 | 1988 |
| Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE T Ciarkowski, N Allen, E Carlson, R McCarthy, C Youtsey, J Wang, P Fay, ... Materials 12 (15), 2455, 2019 | 34 | 2019 |
