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Frederic Genty
Frederic Genty
French Dean Ecole Centrale Pékin, Beihang University, China
Bestätigte E-Mail-Adresse bei centralesupelec.fr
Titel
Zitiert von
Zitiert von
Jahr
Single-frequency tunable Sb-based VCSELs emitting at 2.3 μm
A Ouvrard, A Garnache, L Cerutti, F Genty, D Romanini
IEEE Photonics Technology Letters 17 (10), 2020-2022, 2005
1082005
High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wave lasers emitting near 2.3 µm
DA Yarekha, G Glastre, A Perona, Y Rouillard, F Genty, EM Skouri, ...
Electronics Letters 36 (6), 537-539, 2000
103*2000
Effect of tin doping on optical properties of nanostructured ZnO thin films grown by spray pyrolysis technique
FZ Bedia, A Bedia, N Maloufi, M Aillerie, F Genty, B Benyoucef
Journal of alloys and compounds 616, 312-318, 2014
692014
High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm
L Cerutti, A Garnache, A Ouvrard, F Genty
Journal of Crystal Growth 268 (1-2), 128-134, 2004
682004
Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 µm
L Cerutti, A Garnache, F Genty, A Ouvrard, C Alibert
Electronics Letters 39 (3), 290-292, 2003
592003
2-2.7 μm single frequency tunable Sb-based lasers operating in CW at RT: microcavity and external cavity VCSELs, DFB
A Garnache, A Ouvrard, L Cerutti, D Barat, A Vicet, F Genty, Y Rouillard, ...
Semiconductor Lasers and Laser Dynamics II 6184, 195-209, 2006
552006
Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 µm
A Ducanchez, L Cerutti, P Grech, F Genty, E Tournié
Electronics letters 45 (5), 265-267, 2009
522009
MOVPE grown periodic AlN/BAlN heterostructure with high boron content
X Li, S Sundaram, Y El Gmili, F Genty, S Bouchoule, G Patriache, ...
Journal of Crystal Growth 414, 119-122, 2015
492015
BAlN thin layers for deep UV applications
X Li, S Sundaram, YE Gmili, T Moudakir, F Genty, S Bouchoule, ...
physica status solidi (a) 212 (4), 745-750, 2015
482015
AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm
X Li, S Sundaram, P Disseix, G Le Gac, S Bouchoule, G Patriarche, ...
Optical Materials Express 5 (2), 380-392, 2015
442015
Photothermal investigations of thermal and optical properties of GaAlAsSb and AlAsSb thin layers
F Saadallah, N Yacoubi, F Genty, C Alibert
Journal of Applied Physics 94 (8), 5041-5048, 2003
422003
GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3 μm) grown by MBE
L Cerutti, A Ducanchez, G Narcy, P Grech, G Boissier, A Garnache, ...
Journal of Crystal Growth 311 (7), 1912-1916, 2009
392009
GaInSb/AlGaAsSb strained quantum well semiconductor lasers for 1.55 m operation
G Almuneau, F Genty, A Wilk, P Grech, A Joullié, L Chusseau
Semiconductor science and technology 14 (1), 89, 1999
371999
AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 µm
A Perona, A Garnache, L Cerutti, A Ducanchez, S Mihindou, P Grech, ...
Semiconductor Science and Technology 22 (10), 1140, 2007
352007
Edge and vertical surface emitting lasers around 2.0–2.5 μm and their applications
Y Rouillard, F Genty, A Perona, A Vicet, DA Yarekha, G Boissier, P Grech, ...
Philosophical Transactions of the Royal Society of London. Series A …, 2001
342001
2.36 µm diode pumped VCSEL operating at room temperature in continuous wave with circular TEM00 output beam
L Cerutti, A Garnache, A Ouvrard, M Garcia, E Cerda, F Genty
Electronics Letters 40 (14), 869-871, 2004
302004
High reflectivity Te-doped GaAsSb/AlAsSb Bragg mirror for 1.5 µm surface emitting lasers
F Genty, G Almuneau, L Chusseau, G Boissier, JP Malzac, P Salet, ...
Electronics Letters 33 (2), 140-142, 1997
301997
Long-wavelength (Ga, In) Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy
N Bertru, A Baranov, Y Cuminal, G Almuneau, F Genty, A Joullié, O Brandt, ...
Semiconductor science and technology 13 (8), 936, 1998
281998
Room-Temperature Continuous-Wave Operation of 2.3-m Sb-Based Electrically Pumped Monolithic Vertical-Cavity Lasers
A Ducanchez, L Cerutti, P Grech, F Genty
IEEE Photonics Technology Letters 20 (20), 1745-1747, 2008
272008
Molecular beam epitaxy growth and characterizations of AlGaAsSb/AlAsSb Bragg reflectors on InP
F Genty, G Almuneau, N Bertru, L Chusseau, P Grech, D Cot, J Jacquet
Journal of crystal growth 183 (1-2), 15-22, 1998
261998
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