Friedrich Schäffler
Friedrich Schäffler
Johannes Kepler University Linz (JKU), Austria
Bestätigte E-Mail-Adresse bei jku.at
TitelZitiert vonJahr
High-mobility Si and Ge structures
F Schäffler
Semiconductor Science and Technology 12 (12), 1515, 1997
8601997
Fatty acid salts as stabilizers in size-and shape-controlled nanocrystal synthesis: the case of inverse spinel iron oxide
MV Kovalenko, MI Bodnarchuk, RT Lechner, G Hesser, F Schäffler, ...
Journal of the American Chemical Society 129 (20), 6352-6353, 2007
3302007
Stabilization of the nanomorphology of polymer–fullerene “bulk heterojunction” blends using a novel polymerizable fullerene derivative
M Drees, H Hoppe, C Winder, H Neugebauer, NS Sariciftci, W Schwinger, ...
Journal of Materials Chemistry 15 (48), 5158-5163, 2005
2382005
Charge transport and recombination in bulk heterojunction solar cells studied by the photoinduced charge extraction in linearly increasing voltage technique
AJ Mozer, NS Sariciftci, L Lutsen, D Vanderzande, R Österbacka, ...
Applied Physics Letters 86 (11), 112104, 2005
1992005
Efficiency limiting morphological factors of MDMO-PPV: PCBM plastic solar cells
H Hoppe, T Glatzel, M Niggemann, W Schwinger, F Schaeffler, A Hinsch, ...
Thin solid films 511, 587-592, 2006
1982006
High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
F Schäffler, D Többen, HJ Herzog, G Abstreiter, B Holländer
Semiconductor science and technology 7 (2), 260-266, 1992
1781992
HIGH-ELECTRON-MOBILITY SI/SIGE HETEROSTRUCTURES - INFLUENCE OF THE RELAXED SIGE BUFFER LAYER
F Schaffler, D Toebben, HJ Herzog, et al.
Semiconductor Science and Technology 7 (2), 260-266, 1992
1661992
Colloidal HgTe nanocrystals with widely tunable narrow band gap energies: from telecommunications to molecular vibrations
MV Kovalenko, E Kaufmann, D Pachinger, J Roither, M Huber, J Stangl, ...
Journal of the American Chemical Society 128 (11), 3516-3517, 2006
1522006
Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates
Z Zhong, A Halilovic, T Fromherz, F Schäffler, G Bauer
Applied physics letters 82 (26), 4779-4781, 2003
1472003
Type-II band alignment in Si/ quantum wells from photoluminescence line shifts due to optically induced band-bending effects: Experiment and theory
T Baier, U Mantz, K Thonke, R Sauer, F Schäffler, HJ Herzog
Physical Review B 50 (20), 15191, 1994
1411994
Spin Manipulation of Free Two-Dimensional Electrons in Quantum Wells
AM Tyryshkin, SA Lyon, W Jantsch, F Schäffler
Physical review letters 94 (12), 126802, 2005
1182005
Positioning of self-assembled Ge islands on stripe-patterned Si (001) substrates
Z Zhong, A Halilovic, M Mühlberger, F Schäffler, G Bauer
Journal of applied physics 93 (10), 6258-6264, 2003
1152003
p-type Ge-channel MODFETs with high transconductance grown on Si substrates
U Konig, F Schaffler
IEEE electron device letters 14 (4), 205-207, 1993
1111993
Centrosymmetric quantum dots coherently embedded by epitaxial precipitation
W Heiss, H Groiss, E Kaufmann, G Hesser, M Böberl, G Springholz, ...
Applied physics letters 88 (19), 192109, 2006
1092006
Kinetic growth instabilities on vicinal Si (001) surfaces
C Schelling, G Springholz, F Schäffler
Physical review letters 83 (5), 995, 1999
1091999
Lattice parameter in epilayers: Deviation from Vegard’s rule
M Berti, D De Salvador, AV Drigo, F Romanato, J Stangl, S Zerlauth, ...
Applied physics letters 72 (13), 1602-1604, 1998
1081998
Delayed Plastic Relaxation on Patterned Si Substrates: Coherent SiGe Pyramids with Dominant Facets
Z Zhong, W Schwinger, F Schäffler, G Bauer, G Vastola, F Montalenti, ...
Physical review letters 98 (17), 176102, 2007
1022007
Enhancement mode n-channel Si/SiGe MODFET with high intrinsic transconductance
U König, AJ Boers, F Schäffler, E Kasper
Electronics Letters 28 (2), 160-162, 1992
1011992
Hybrid solar cells based on inorganic nanoclusters and conjugated polymers
E Arici, H Hoppe, F Schäffler, D Meissner, MA Malik, NS Sariciftci
Thin Solid Films 451, 612-618, 2004
932004
Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si (001) substrates
TU Schülli, G Vastola, MI Richard, A Malachias, G Renaud, F Uhlík, ...
Physical review letters 102 (2), 025502, 2009
922009
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