Gilberto Medeiros Ribeiro
Gilberto Medeiros Ribeiro
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Zitiert von
Zitiert von
Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes
G Medeiros-Ribeiro, AM Bratkovski, TI Kamins, DAA Ohlberg, RS Williams
Science 279 (5349), 353-355, 1998
A scalable neuristor built with Mott memristors
MD Pickett, G Medeiros-Ribeiro, RS Williams
Nature materials 12 (2), 114-117, 2013
Intermixing and shape changes during the formation of InAs self-assembled quantum dots
JM Garcıa, G Medeiros-Ribeiro, K Schmidt, T Ngo, JL Feng, A Lorke, ...
Applied physics letters 71 (14), 2014-2016, 1997
Sub-nanosecond switching of a tantalum oxide memristor
AC Torrezan, JP Strachan, G Medeiros-Ribeiro, RS Williams
Nanotechnology 22 (48), 485203, 2011
Memristor− CMOS hybrid integrated circuits for reconfigurable logic
Q Xia, W Robinett, MW Cumbie, N Banerjee, TJ Cardinali, JJ Yang, W Wu, ...
Nano letters 9 (10), 3640-3645, 2009
High switching endurance in TaOx memristive devices
JJ Yang, MX Zhang, JP Strachan, F Miao, MD Pickett, RD Kelley, ...
Applied Physics Letters 97 (23), 2010
Anatomy of a nanoscale conduction channel reveals the mechanism of a high‐performance memristor
F Miao, JP Strachan, JJ Yang, MX Zhang, I Goldfarb, AC Torrezan, ...
Advanced materials 23 (47), 5633-5640, 2011
Charged excitons in self-assembled semiconductor quantum dots
RJ Warburton, CS Dürr, K Karrai, JP Kotthaus, G Medeiros-Ribeiro, ...
Physical review letters 79 (26), 5282, 1997
Coulomb interactions in small charge-tunable quantum dots: A simple model
RJ Warburton, BT Miller, CS Dürr, C Bödefeld, K Karrai, JP Kotthaus, ...
Physical Review B 58 (24), 16221, 1998
Direct identification of the conducting channels in a functioning memristive device
JP Strachan, MD Pickett, JJ Yang, S Aloni, AL David Kilcoyne, ...
Advanced materials 22 (32), 3573-3577, 2010
Carrier relaxation and electronic structure in InAs self-assembled quantum dots
KH Schmidt, G Medeiros-Ribeiro, M Oestreich, PM Petroff, GH Döhler
Physical review B 54 (16), 11346, 1996
Shell structure and electron-electron interaction in self-assembled InAs quantum dots
M Fricke, A Lorke, JP Kotthaus, G Medeiros-Ribeiro, PM Petroff
Europhysics Letters 36 (3), 197, 1996
Few-electron ground states of charge-tunable self-assembled quantum dots
BT Miller, W Hansen, S Manus, RJ Luyken, A Lorke, JP Kotthaus, S Huant, ...
Physical Review B 56 (11), 6764, 1997
Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001)
Y Chen, DAA Ohlberg, G Medeiros-Ribeiro, YA Chang, RS Williams
Applied Physics Letters 76 (26), 4004-4006, 2000
Evolution of Ge islands on Si (001) during annealing
TI Kamins, G Medeiros-Ribeiro, DAA Ohlberg, R Stanley Williams
Journal of Applied Physics 85 (2), 1159-1171, 1999
Electron and hole energy levels in InAs self‐assembled quantum dots
G Medeiros‐Ribeiro, D Leonard, PM Petroff
Applied Physics Letters 66 (14), 1767-1769, 1995
Anisotropy of the Raman spectra of nanographite ribbons
LG Cançado, MA Pimenta, BRA Neves, G Medeiros-Ribeiro, T Enoki, ...
Physical review letters 93 (4), 047403, 2004
Inverse bloch oscillator: Strong terahertz-photocurrent resonances at the bloch frequency
K Unterrainer, BJ Keay, MC Wanke, SJ Allen, D Leonard, ...
Physical review letters 76 (16), 2973, 1996
Engineering nonlinearity into memristors for passive crossbar applications
J Joshua Yang, MX Zhang, MD Pickett, F Miao, J Paul Strachan, WD Li, ...
Applied Physics Letters 100 (11), 2012
3D composition of epitaxial nanocrystals by anomalous x-ray diffraction: Observation of a Si-rich core in Ge domes on Si (100)
A Malachias, S Kycia, G Medeiros-Ribeiro, R Magalhaes-Paniago, ...
Physical review letters 91 (17), 176101, 2003
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