Room-temperature triggered single photon emission from a III-nitride site-controlled nanowire quantum dot MJ Holmes, K Choi, S Kako, M Arita, Y Arakawa
Nano letters 14 (2), 982-986, 2014
447 2014 Selective-area growth of thin GaN nanowires by MOCVD K Choi, M Arita, Y Arakawa
Journal of Crystal Growth 357, 58-61, 2012
152 2012 Single photons from a hot solid-state emitter at 350 K MJ Holmes, S Kako, K Choi, M Arita, Y Arakawa
ACS photonics 3 (4), 543-546, 2016
95 2016 Spectral diffusion and its influence on the emission linewidths of site-controlled GaN nanowire quantum dots M Holmes, S Kako, K Choi, M Arita, Y Arakawa
Physical Review B 92 (11), 115447, 2015
59 2015 Photoluminescence from highly excited AlN epitaxial layers Y Yamada, K Choi, S Shin, H Murotani, T Taguchi, N Okada, H Amano
Applied Physics Letters 92 (13), 2008
44 2008 Strong exciton confinement in site-controlled GaN quantum dots embedded in nanowires K Choi, S Kako, MJ Holmes, M Arita, Y Arakawa
Applied Physics Letters 103 (17), 2013
37 2013 Measurement of an Exciton Rabi Rotation in a Single Nanowire-Quantum Dot Using Photoluminescence Spectroscopy: Evidence for Coherent Control M Holmes, S Kako, K Choi, P Podemski, M Arita, Y Arakawa
Physical Review Letters 111 (5), 057401, 2013
37 2013 Site-controlled growth of single GaN quantum dots in nanowires by MOCVD K Choi, M Arita, S Kako, Y Arakawa
Journal of crystal growth 370, 328-331, 2013
31 2013 Enhanced reliability of 7-nm process technology featuring EUV K Choi, HC Sagong, W Kang, H Kim, J Hai, M Lee, B Kim, M Lee, S Lee, ...
IEEE Transactions on Electron Devices 66 (12), 5399-5403, 2019
19 2019 Modeling of FinFET self-heating effects in multiple FinFET technology generations with implication for transistor and product reliability HC Sagong, K Choi, J Kim, T Jeong, M Choe, H Shim, W Kim, J Park, ...
2018 IEEE Symposium on VLSI Technology, 121-122, 2018
19 2018 Probing the excitonic states of site-controlled GaN nanowire quantum dots MJ Holmes, S Kako, K Choi, P Podemski, M Arita, Y Arakawa
Nano Letters 15 (2), 1047-1051, 2015
13 2015 Reliability on evolutionary FinFET CMOS technology and beyond K Choi, HC Sagong, M Jin, J Hai, M Lee, T Jeong, MS Yeo, H Shim, ...
2020 IEEE International Electron Devices Meeting (IEDM), 9.3. 1-9.3. 4, 2020
11 2020 Linearly polarized single photons from small site-controlled GaN nanowire quantum dots MJ Holmes, S Kako, K Choi, M Arita, Y Arakawa
Gallium Nitride Materials and Devices XI 9748, 138-142, 2016
10 2016 ACS Photonics 3, 543 (2016) MJ Holmes, S Kako, K Choi, M Arita, Y Arakawa
9 Temperature dependent photoluminescence excitation spectroscopy of GaN quantum dots in site controlled GaN/AlGaN nanowires MJ Holmes, S Kako, K Choi, P Podemski, M Arita, Y Arakawa
Japanese Journal of Applied Physics 52 (8S), 08JL02, 2013
8 2013 Reverse body bias dependence of HCI reliability in advanced FinFET MI Mahmud, R Ranjan, KD Lee, PR Perepa, CD Kwon, S Choo, K Choi
2022 IEEE International Reliability Physics Symposium (IRPS), P58-1-P58-4, 2022
4 2022 Middle-of-the-Line Reliability Characterization of Recessed-Diffusion-Contact Adopted sub-5nm Logic Technology S Kim, U Jung, S Choo, K Choi, T Chung, S Chung, E Lee, J Park, D Bae, ...
2022 IEEE International Reliability Physics Symposium (IRPS), 11A. 1-1-11A. 1-7, 2022
4 2022 Time dependent variability in advanced FinFET technology for end-of-lifetime reliability prediction H Jiang, J Kim, K Choi, H Shim, H Sagong, J Park, H Rhee, E Lee
2021 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2021
3 2021 FEOL self-heating and BEOL joule-heating effects of FinFET technology and its implications for reliability prediction H Jiang, T Jeong, H Sagong, K Choi, M Jin, M Yeo, H Rhee, E Lee
2020 IEEE International Integrated Reliability Workshop (IIRW), 1-5, 2020
3 2020 Reliability of advanced FinFET technology nodes beyond planar HC Sagong, K Choi, H Jiang, J Park, H Rhee, S Pae
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
3 2020