A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
Electron Devices Meeting (IEDM), 2011 IEEE International, 28.1. 1-28.1. 4, 2011
129 2011 InGaAs/InAlAs avalanche photodiode with undepleted absorber N Li, R Sidhu, X Li, F Ma, X Zheng, S Wang, G Karve, S Demiguel, ...
Applied physics letters 82 (13), 2175-2177, 2003
88 2003 Demonstration of optical gain at 1.06 μm in a neodymium-doped polyimide waveguide G Karve, B Bihari, RT Chen
Applied Physics Letters 77 (9), 1253-1255, 2000
87 2000 FINFET technology featuring high mobility SiGe channel for 10nm and beyond D Guo, G Karve, G Tsutsui, KY Lim, R Robison, T Hook, R Vega, D Liu, ...
VLSI Technology, 2016 IEEE Symposium on, 1-2, 2016
65 2016 Origin of dark counts in avalanche photodiodes operated in Geiger mode G Karve, S Wang, F Ma, X Li, JC Campbell, RG Ispasoiu, DS Bethune, ...
Applied Physics Letters 86 (6), 063505, 2005
62 * 2005 Analysis of breakdown probabilities in avalanche photodiodes using a history-dependent analytical model S Wang, F Ma, X Li, G Karve, X Zheng, JC Campbell
Applied physics letters 82 (12), 1971-1973, 2003
56 2003 Geiger mode operation of an In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode G Karve, X Zheng, X Zhang, X Li, N Li, S Wang, F Ma, A Holmes, ...
IEEE journal of quantum electronics 39 (10), 1281-1286, 2003
48 2003 Dual high-k oxides with sige channel TY Luo, GV Karve, DG Tekleab
US Patent 8,017,469, 2011
41 2011 Detection efficiencies and generalized breakdown probabilities for nanosecond-gated near infrared single-photon avalanche photodiodes DA Ramirez, MM Hayat, G Karve, JC Campbell, SN Torres, BEA Saleh, ...
IEEE Journal of Quantum Electronics 42 (2), 137-145, 2006
40 2006 Dual substrate orientation or bulk on SOI integrations using oxidation for silicon epitaxy spacer formation GS Spencer, JM Grant, GV Karve
US Patent 7,790,528, 2010
38 2010 Geiger mode operation of ultraviolet 4H-SiC avalanche photodiodes AL Beck, G Karve, S Wang, J Ming, X Guo, JC Campbell
IEEE photonics technology letters 17 (7), 1507-1509, 2005
37 2005 A near-infrared enhanced silicon single-photon avalanche diode with a spherically uniform electric field peak E Van Sieleghem, A Süss, P Boulenc, J Lee, G Karve, K De Munck, ...
IEEE Electron Device Letters 42 (6), 879-882, 2021
23 2021 Scaling challenges of FinFET architecture below 40nm contacted gate pitch A Razavieh, P Zeitzoff, DE Brown, G Karve, EJ Nowak
Device Research Conference (DRC), 2017 75th Annual, 1-2, 2017
21 2017 Step height reduction between SOI and EPI for DSO and BOS integration GV Karve, D Eades, GS Spencer, TR White
US Patent 7,749,829, 2010
18 2010 FinFET device having a high germanium content fin structure and method of making same Q Liu, B Doris, G Karve
US Patent 9,431,514, 2016
16 2016 Dual gate oxide device integration GV Karve, SB Samavedam, WJ Taylor Jr
US Patent 7,709,331, 2010
16 2010 Low-temperature breakdown properties of avalanche photodiodes F Ma, G Karve, X Zheng, X Sun, AL Holmes Jr, JC Campbell
Applied physics letters 81 (10), 1908-1910, 2002
16 2002 Cutting fins and gates in CMOS devices H Bu, K Cheng, AM Greene, D Guo, SK Kanakasabapathy, G Karve, ...
US Patent 9,721,848, 2017
13 2017 GaAsSb resonant-cavity enhanced avalanche photodiode operating at 1.06/spl mu/m R Sidhu, H Chen, N Duan, GV Karve, JC Campbell, AL Holmes
Electronics Letters 40 (20), 1296-1297, 2004
13 2004 A thin-film polymeric waveguide beam deflector based on thermooptic effect CH Jang, L Sun, JH Kim, X Lu, G Karve, RT Chen, JJ Maki
IEEE Photonics Technology Letters 13 (5), 490-492, 2001
13 2001