David Leadley
David Leadley
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Zitiert von
Zitiert von
Measurements of the effective mass and scattering times of composite fermions from magnetotransport analysis
DR Leadley, RJ Nicholas, CT Foxon, JJ Harris
Physical review letters 72 (12), 1906, 1994
Intersubband resonant scattering in GaAs-Ga 1− x Al x As heterojunctions
DR Leadley, R Fletcher, RJ Nicholas, F Tao, CT Foxon, JJ Harris
Physical Review B 46 (19), 12439, 1992
Fractional quantum Hall effect measurements at zero g factor
DR Leadley, RJ Nicholas, DK Maude, AN Utjuzh, JC Portal, JJ Harris, ...
Physical review letters 79 (21), 4246, 1997
Ohmic contacts to n-type germanium with low specific contact resistivity
K Gallacher, P Velha, DJ Paul, I MacLaren, M Myronov, DR Leadley
Applied Physics Letters 100 (2), 022113, 2012
Critical collapse of the exchange-enhanced spin splitting in two-dimensional systems
DR Leadley, RJ Nicholas, JJ Harris, CT Foxon
Physical Review B 58 (19), 13036, 1998
Reverse graded relaxed buffers for high Ge content SiGe virtual substrates
VA Shah, A Dobbie, M Myronov, DJF Fulgoni, LJ Nash, DR Leadley
Applied Physics Letters 93 (19), 192103, 2008
Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates
VA Shah, A Dobbie, M Myronov, DR Leadley
Journal of Applied Physics 107 (6), 064304, 2010
Modelling the inhomogeneous SiC Schottky interface
PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ...
Journal of Applied Physics 114 (22), 223704, 2013
Ultra-high hole mobility exceeding one million in a strained germanium quantum well
A Dobbie, M Myronov, RJH Morris, AHA Hassan, MJ Prest, VA Shah, ...
Applied Physics Letters 101 (17), 172108, 2012
Cyclotron phonon emission and electron energy loss rates in GaAs-GaAlAs heterojunctions
DR Leadley, RJ Nicholas, JJ Harris, CT Foxon
Semiconductor science and technology 4 (10), 879, 1989
High quality relaxed Ge layers grown directly on a Si (0 0 1) substrate
VA Shah, A Dobbie, M Myronov, DR Leadley
Solid-State Electronics 62 (1), 189-194, 2011
Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm
RE Warburton, G Intermite, M Myronov, P Allred, DR Leadley, K Gallacher, ...
IEEE Transactions on Electron Devices 60 (11), 3807-3813, 2013
Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon
L Lever, Y Hu, M Myronov, X Liu, N Owens, FY Gardes, IP Marko, ...
Optics letters 36 (21), 4158-4160, 2011
Spin transport in germanium at room temperature
C Shen, T Trypiniotis, KY Lee, SN Holmes, R Mansell, M Husain, V Shah, ...
Applied Physics Letters 97 (16), 162104, 2010
Observation of microwave-induced resistance oscillations in a high-mobility two-dimensional hole gas in a strained Ge/SiGe quantum well
MA Zudov, OA Mironov, QA Ebner, PD Martin, Q Shi, DR Leadley
Physical Review B 89 (12), 125401, 2014
Effect of layer thickness on structural quality of Ge epilayers grown directly on Si (001)
VA Shah, A Dobbie, M Myronov, DR Leadley
Thin Solid Films 519 (22), 7911-7917, 2011
Application of Bryan’s algorithm to the mobility spectrum analysis of semiconductor devices
D Chrastina, JP Hague, DR Leadley
Journal of applied physics 94 (10), 6583-6590, 2003
Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas
C Morrison, P Wiśniewski, SD Rhead, J Foronda, DR Leadley, M Myronov
Applied Physics Letters 105 (18), 182401, 2014
Temperature dependence of the breakdown of the quantum Hall effect studied by induced currents
AJ Matthews, KV Kavokin, A Usher, ME Portnoi, M Zhu, JD Gething, ...
Physical Review B 70 (7), 075317, 2004
Influence of acoustic phonons on inter-subband scattering in GaAs-GaAlAs heterojunctions
DR Leadley, RJ Nicholas, JJ Harris, CT Foxon
Semiconductor science and technology 4 (10), 885, 1989
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