Folgen
Dr. Tim David Germann
Dr. Tim David Germann
Bestätigte E-Mail-Adresse bei physik.tu-berlin.de
Titel
Zitiert von
Zitiert von
Jahr
Metal-cavity surface-emitting microlaser at room temperature
CY Lu, SW Chang, SL Chuang, TD Germann, D Bimberg
Applied Physics Letters 96 (25), 2010
1322010
Control of fine-structure splitting and excitonic binding energies in selected individual InAs∕ GaAs quantum dots
R Seguin, A Schliwa, TD Germann, S Rodt, K Pötschke, A Strittmatter, ...
Applied Physics Letters 89 (26), 2006
952006
High-power semiconductor disk laser based on InAs∕ GaAs submonolayer quantum dots
TD Germann, A Strittmatter, J Pohl, UW Pohl, D Bimberg, J Rautiainen, ...
Applied Physics Letters 92 (10), 2008
842008
Electrically driven single photon source based on a site-controlled quantum dot with self-aligned current injection
W Unrau, D Quandt, JH Schulze, T Heindel, TD Germann, O Hitzemann, ...
Applied Physics Letters 101 (21), 2012
672012
Atomic structure and optical properties of InAs submonolayer depositions in GaAs
A Lenz, H Eisele, J Becker, JH Schulze, TD Germann, F Luckert, ...
Journal of Vacuum Science & Technology B 29 (4), 2011
532011
Temperature-stable operation of a quantum dot semiconductor disk laser
TD Germann, A Strittmatter, J Pohl, UW Pohl, D Bimberg, J Rautiainen, ...
Applied Physics Letters 93 (5), 2008
512008
Quantum-dot semiconductor disk lasers
TD Germann, A Strittmatter, UW Pohl, D Bimberg, J Rautiainen, M Guina, ...
Journal of Crystal Growth 310 (23), 5182-5186, 2008
502008
Electro-optical resonance modulation of vertical-cavity surface-emitting lasers
TD Germann, W Hofmann, AM Nadtochiy, JH Schulze, A Mutig, ...
Optics express 20 (5), 5099-5107, 2012
472012
Lateral positioning of InGaAs quantum dots using a buried stressor
A Strittmatter, A Schliwa, JH Schulze, TD Germann, A Dreismann, ...
Applied Physics Letters 100 (9), 2012
462012
Site‐controlled quantum dot growth on buried oxide stressor layers
A Strittmatter, A Holzbecher, A Schliwa, JH Schulze, D Quandt, ...
physica status solidi (a) 209 (12), 2411-2420, 2012
392012
Carrier dynamics in InAs/GaAs submonolayer stacks coupled to Stranski-Krastanov quantum dots
T Switaiski, U Woggon, DE Alden Angeles, A Hoffmann, JH Schulze, ...
Physical Review B—Condensed Matter and Materials Physics 88 (3), 035314, 2013
262013
1040 nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in Stranski-Krastanow regime
A Strittmatter, TD Germann, J Pohl, UW Pohl, D Bimberg, J Rautiainen, ...
Electronics Letters 44 (4), 290-291, 2008
262008
MOCVD of InGaAs/GaAs quantum dots for lasers emitting close to 1.3 μm
TD Germann, A Strittmatter, T Kettler, K Posilovic, UW Pohl, D Bimberg
Journal of crystal growth 298, 591-594, 2007
262007
CW substrate-free metal-cavity surface microemitters at 300 K
CY Lu, SW Chang, SL Chuang, TD Germann, UW Pohl, D Bimberg
Semiconductor science and technology 26 (1), 014012, 2010
202010
Metal-cavity nanolasers: How small can they go?
SL Chuang, CY Lu, A Matsudaira
17th Microopics Conference (MOC), 1-4, 2011
192011
Alternative precursor metal-organic chemical vapor deposition of InGaAs∕ GaAs quantum dot laser diodes with ultralow threshold at 1.25 μm
A Strittmatter, TD Germann, T Kettler, K Posilovic, UW Pohl, D Bimberg
Applied physics letters 88 (26), 2006
192006
High-power low-divergence 1060 nm photonic crystal laser diodes based on quantum dots
K Posilovic, VP Kalosha, M Winterfeldt, JH Schulze, D Quandt, ...
Electronics letters 48 (22), 1419-1420, 2012
182012
Monolithic electro‐optically modulated vertical cavity surface emitting laser with 10 Gb/s open‐eye operation
TD Germann, A Strittmatter, A Mutig, AM Nadtochiy, JA Lott, SA Blokhin, ...
physica status solidi c 7 (10), 2552-2554, 2010
182010
Atomic structure of closely stacked InAs submonolayer depositions in GaAs
T Niermann, F Kießling, M Lehmann, JH Schulze, TD Germann, ...
Journal of Applied Physics 112 (8), 2012
172012
Low thermal impedance of substrate-free metal cavity surface-emitting microlasers
CY Lu, SW Chang, SL Chuang, TD Germann, UW Pohl, D Bimberg
IEEE Photonics Technology Letters 23 (15), 1031-1033, 2011
172011
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20