Vassil Palankovski
Vassil Palankovski
Institute for Microelectronics, TU Wien
Verified email at
Cited by
Cited by
Analysis and simulation of heterostructure devices
V Palankovski, R Quay
Springer Science & Business Media, 2004
High-temperature modeling of algan/gan hemts
S Vitanov, V Palankovski, S Maroldt, R Quay
Solid-State Electronics 54 (10), 1105-1112, 2010
A temperature dependent model for the saturation velocity in semiconductor materials
R Quay, C Moglestue, V Palankovski, S Selberherr
Materials Science in Semiconductor Processing 3 (1-2), 149-155, 2000
Electron mobility model for strained-Si devices
S Dhar, H Kosina, V Palankovski, SE Ungersböck, S Selberherr
IEEE Transactions on Electron Devices 52 (4), 527-533, 2005
Study of dopant-dependent band gap narrowing in compound semiconductor devices
V Palankovski, G Kaiblinger-Grujin, S Selberherr
Materials Science and Engineering: B 66 (1-3), 46-49, 1999
Simulation of heterojunction bipolar transistors
V Palankovski
na, 2000
Physics-based modeling of GaN HEMTs
S Vitanov, V Palankovski, S Maroldt, R Quay, S Murad, T Rodle, ...
IEEE transactions on electron devices 59 (3), 685-693, 2012
An energy relaxation time model for device simulation
B Gonzalez, V Palankovski, H Kosina, A Hernandez, S Selberherr
Solid-state electronics 43 (9), 1791-1795, 1999
Simulation of power heterojunction bipolar transistors on gallium arsenide
V Palankovski, R Schultheis, S Selberherr
IEEE Transactions on Electron Devices 48 (6), 1264-1269, 2001
MINIMOS-NT user’s guide
T Binder, K Dragosits, T Grasser, R Klima, M Knaipp, H Kosina, R Mlekus, ...
Institut für Mikroelektronik 85, 49-65, 1998
Wigner transport models of the electron-phonon kinetics in quantum wires
M Nedjalkov, D Vasileska, DK Ferry, C Jacoboni, C Ringhofer, I Dimov, ...
Physical Review B 74 (3), 035311, 2006
Thermal models for semiconductor device simulation
V Palankovski, S Selberherr
HITEN 99. Third European Conference on High Temperature Electronics.(IEEE …, 1999
Hot-electron-related degradation in InAlN/GaN high-electron-mobility transistors
M Ťapajna, N Killat, V Palankovski, D Gregušová, K Čičo, JF Carlin, ...
IEEE Transactions on Electron Devices 61 (8), 2793-2801, 2014
Field-plate optimization of alGaN/GaN HEMTs
V Palankovski, S Vitanov, R Quay
2006 IEEE Compound Semiconductor Integrated Circuit Symposium, 107-110, 2006
Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region
M Jurkovic, D Gregusova, V Palankovski, Š Hascik, M Blaho, K Cico, ...
IEEE electron device letters 34 (3), 432-434, 2013
Normally-off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study
S Vitanov, V Palankovski
Solid-State Electronics 52 (11), 1791-1795, 2008
Industrial application of heterostructure device simulation
V Palankovski, R Quay, S Selberherr
IEEE Journal of Solid-State Circuits 36 (9), 1365-1370, 2001
Nonlinear electronic transport and device performance of HEMTs
R Quay, K Hess, R Reuter, M Schlechtweg, T Grave, V Palankovski, ...
IEEE Transactions on Electron devices 48 (2), 210-217, 2001
Hydrodynamic mixed-mode simulation
T Grasser, V Palankovski, G Schrom, S Selberherr
Simulation of Semiconductor Processes and Devices 1998, 247-250, 1998
Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations
S Vainshtein, V Yuferev, V Palankovski, DS Ong, J Kostamovaara
Applied Physics Letters 92 (6), 062114, 2008
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