Konstantinos Pantzas
Konstantinos Pantzas
Research Scientist, CNRS Center for Nanostructures and Nanosciences
Bestätigte E-Mail-Adresse bei c2n.upsaclay.fr - Startseite
Zitiert von
Zitiert von
Sharpening the interfaces of axial heterostructures in self-catalyzed AlGaAs nanowires: experiment and theory
G Priante, F Glas, G Patriarche, K Pantzas, F Oehler, JC Harmand
Nano letters 16 (3), 1917-1924, 2016
Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
K Pantzas, Y El Gmili, J Dickerson, S Gautier, L Largeau, O Mauguin, ...
Journal of crystal growth 370, 57-62, 2013
Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study
Y El Gmili, G Orsal, K Pantzas, T Moudakir, S Sundaram, G Patriarche, ...
Acta Materialia 61 (17), 6587-6596, 2013
Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications
M Abid, T Moudakir, G Orsal, S Gautier, A En Naciri, Z Djebbour, JH Ryou, ...
Applied Physics Letters 100 (5), 051101, 2012
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
A Elbaz, D Buca, N von den Driesch, K Pantzas, G Patriarche, ...
Nature Photonics 14 (6), 375-382, 2020
Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy
K Pantzas, G Patriarche, D Troadec, S Gautier, T Moudakir, S Suresh, ...
Nanotechnology 23 (45), 455707, 2012
Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials
K Pantzas, G Patriarche, G Orsal, S Gautier, T Moudakir, M Abid, V Gorge, ...
physica status solidi (a) 209 (1), 25-28, 2012
Deep structural analysis of novel BGaN material layers grown by MOVPE
S Gautier, G Patriarche, T Moudakir, M Abid, G Orsal, K Pantzas, ...
Journal of crystal growth 315 (1), 288-291, 2011
Characteristics of the surface microstructures in thick InGaN layers on GaN
Y El Gmili, G Orsal, K Pantzas, A Ahaitouf, T Moudakir, S Gautier, ...
Optical Materials Express 3 (8), 1111-1118, 2013
Nondestructive three-dimensional imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure
AI Pateras, M Allain, P Godard, L Largeau, G Patriarche, A Talneau, ...
Physical Review B 92 (20), 205305, 2015
Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer …
S Gautier, T Moudakir, G Patriarche, DJ Rogers, VE Sandana, ...
Journal of crystal growth 370, 63-67, 2013
Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells
V Gorge, A Migan-Dubois, Z Djebbour, K Pantzas, S Gautier, T Moudakir, ...
Materials Science and Engineering: B 178 (2), 142-148, 2013
Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys
K Pantzas, G Patriarche, D Troadec, M Kociak, N Cherkashin, M Hÿtch, ...
Journal of Applied Physics 117 (5), 055705, 2015
Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template
S Sundaram, R Puybaret, Y El Gmili, X Li, PL Bonanno, K Pantzas, ...
Journal of Applied Physics 116 (16), 163105, 2014
Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content
S Gautier, G Orsal, T Moudakir, N Maloufi, F Jomard, M Alnot, Z Djebbour, ...
Journal of crystal growth 312 (5), 641-644, 2010
Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE
T Moudakir, S Gautier, S Suresh, M Abid, Y El Gmili, G Patriarche, ...
Journal of crystal growth 370, 12-15, 2013
Evaluation of the surface bonding energy of an InP membrane bonded oxide-free to Si using instrumented nanoindentation
K Pantzas, G Patriarche, E Le Bourhis, D Troadec, A Itawi, G Beaudoin, ...
Applied Physics Letters 103 (8), 081901, 2013
Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si (111) templates
S Sundaram, Y El Gmili, R Puybaret, X Li, PL Bonanno, K Pantzas, ...
Applied Physics Letters 107 (11), 113105, 2015
Polarization-and diffraction-controlled second-harmonic generation from semiconductor metasurfaces
C Gigli, G Marino, S Suffit, G Patriarche, G Beaudoin, K Pantzas, I Sagnes, ...
JOSA B 36 (7), E55-E64, 2019
Void-free direct bonding of InP to Si: Advantages of low H-content and ozone activation
A Itawi, K Pantzas, I Sagnes, G Patriarche, A Talneau
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014
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