Peide Ye
Peide Ye
Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue University
Bestätigte E-Mail-Adresse bei purdue.edu - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Phosphorene: an unexplored 2D semiconductor with a high hole mobility
H Liu, AT Neal, Z Zhu, Z Luo, X Xu, D Tománek, PD Ye
ACS nano 8 (4), 4033-4041, 2014
42072014
Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode
Y Deng, Z Luo, NJ Conrad, H Liu, Y Gong, S Najmaei, PM Ajayan, J Lou, ...
ACS nano 8 (8), 8292-8299, 2014
9102014
Semiconducting black phosphorus: synthesis, transport properties and electronic applications
H Liu, Y Du, Y Deng, DY Peide
Chemical Society Reviews 44 (9), 2732-2743, 2015
8882015
Channel Length Scaling of MoS2 MOSFETs
H Liu, AT Neal, PD Ye
ACS nano 6 (10), 8563-8569, 2012
6642012
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics
S Ju, A Facchetti, Y Xuan, J Liu, F Ishikawa, P Ye, C Zhou, TJ Marks, ...
Nature nanotechnology 2 (6), 378-384, 2007
5292007
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited as gate dielectric
PD Ye, B Yang, KK Ng, J Bude, GD Wilk, S Halder, JCM Hwang
Applied Physics Letters 86 (6), 063501, 2005
4632005
Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ...
Nano letters 14 (11), 6275-6280, 2014
4522014
Electrons in a periodic magnetic field induced by a regular array of micromagnets
PD Ye, D Weiss, RR Gerhardts, M Seeger, K Von Klitzing, K Eberl, ...
Physical review letters 74 (15), 3013, 1995
4221995
Dual-Gate MOSFET With Atomic-Layer-Depositedas Top-Gate Dielectric
H Liu, DY Peide
IEEE electron device letters 33 (4), 546-548, 2012
4202012
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus
Z Luo, J Maassen, Y Deng, Y Du, RP Garrelts, MS Lundstrom, DY Peide, ...
Nature communications 6 (1), 1-8, 2015
4062015
High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm
Y Xuan, YQ Wu, PD Ye
IEEE Electron Device Letters 29 (4), 294-296, 2008
3792008
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
PD Ye, GD Wilk, B Yang, J Kwo, SNG Chu, S Nakahara, HJL Gossmann, ...
Applied Physics Letters 83 (1), 180-182, 2003
3682003
Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling
Y Du, H Liu, Y Deng, PD Ye
ACS nano 8 (10), 10035-10042, 2014
3562014
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
PD Ye, GD Wilk, J Kwo, B Yang, HJL Gossmann, M Frei, SNG Chu, ...
IEEE Electron Device Letters 24 (4), 209-211, 2003
3022003
Top-gated graphene field-effect-transistors formed by decomposition of SiC
YQ Wu, PD Ye, MA Capano, Y Xuan, Y Sui, M Qi, JA Cooper, T Shen, ...
Applied Physics Letters 92 (9), 092102, 2008
2742008
Giant microwave photoresistance of two-dimensional electron gas
PD Ye, LW Engel, DC Tsui, JA Simmons, JR Wendt, GA Vawter, JL Reno
Applied Physics Letters 79 (14), 2193-2195, 2001
2632001
Atomic-layer-deposited nanostructures for graphene-based nanoelectronics
Y Xuan, YQ Wu, T Shen, M Qi, MA Capano, JA Cooper, PD Ye
Applied Physics Letters 92 (1), 013101, 2008
2592008
Fundamentals of III-V semiconductor MOSFETs
S Oktyabrsky, DY Peide
Springer, 2010
2582010
Response to comment on" Obestatin, a peptide encoded by the ghrelin gene, opposes ghrelin's effects on food intake"
JV Zhang, C Klein, PG Ren, S Kass, L Ver Donck, D Moechars, ...
science 315 (5813), 766-766, 2007
2552007
Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited on GaAs
HC Lin, PD Ye, GD Wilk
Applied physics letters 87 (18), 182904, 2005
2392005
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