F. C-P. Massabuau
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Zitiert von
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Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures
FCP Massabuau, SL Sahonta, L Trinh-Xuan, S Rhode, TJ Puchtler, ...
Applied Physics Letters 101 (21), 212107, 2012
722012
The effects of Si doping on dislocation movement and tensile stress in GaN films
MA Moram, MJ Kappers, F Massabuau, RA Oliver, CJ Humphreys
Journal of Applied Physics 109 (7), 073509, 2011
592011
The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes
RA Oliver, FCP Massabuau, MJ Kappers, WA Phillips, EJ Thrush, ...
Applied Physics Letters 103 (14), 141114, 2013
582013
Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions
S Hammersley, MJ Kappers, FCP Massabuau, SL Sahonta, P Dawson, ...
Applied Physics Letters 107 (13), 132106, 2015
512015
Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography
F Tang, T Zhu, F Oehler, WY Fu, JT Griffiths, FCP Massabuau, ...
Applied Physics Letters 106 (7), 072104, 2015
502015
The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem
FCP Massabuau, MJ Davies, F Oehler, SK Pamenter, EJ Thrush, ...
Applied physics letters 105 (11), 112110, 2014
402014
Carrier localization in the vicinity of dislocations in InGaN
FCP Massabuau, P Chen, MK Horton, SL Rhode, CX Ren, TJ O'Hanlon, ...
Journal of Applied Physics 121 (1), 013104, 2017
392017
Structure and strain relaxation effects of defects in InxGa1−xN epilayers
SL Rhode, WY Fu, MA Moram, FCP Massabuau, MJ Kappers, ...
Journal of Applied Physics 116 (10), 103513, 2014
342014
A peeling approach for integrated manufacturing of large monolayer h-BN crystals
R Wang, DG Purdie, Y Fan, FCP Massabuau, P Braeuninger-Weimer, ...
ACS nano 13 (2), 2114-2126, 2019
292019
Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells
FCP Massabuau, L Trinh-Xuan, D Lodie, EJ Thrush, D Zhu, F Oehler, ...
Journal of Applied Physics 113 (7), 073505, 2013
282013
X-ray diffraction analysis of cubic zincblende III-nitrides
M Frentrup, LY Lee, SL Sahonta, MJ Kappers, F Massabuau, P Gupta, ...
Journal of Physics D: Applied Physics 50 (43), 433002, 2017
222017
Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures
FCP Massabuau, MJ Davies, WE Blenkhorn, S Hammersley, MJ Kappers, ...
physica status solidi (b) 252 (5), 928-935, 2015
222015
Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells
TJ Badcock, P Dawson, MJ Davies, MJ Kappers, FCP Massabuau, ...
Journal of Applied Physics 115 (11), 113505, 2014
222014
α-Ga2O3 grown by low temperature atomic layer deposition on sapphire
JW Roberts, JC Jarman, DN Johnstone, PA Midgley, PR Chalker, ...
Journal of Crystal Growth 487, 23-27, 2018
202018
Dislocations in AlGaN: Core structure, atom segregation, and optical properties
FCP Massabuau, SL Rhode, MK Horton, TJ O’Hanlon, A Kovács, ...
Nano letters 17 (8), 4846-4852, 2017
202017
Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
JW Roberts, PR Chalker, B Ding, RA Oliver, JT Gibbon, LAH Jones, ...
Journal of Crystal Growth 528, 125254, 2019
192019
The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures
MJ Davies, P Dawson, FCP Massabuau, RA Oliver, MJ Kappers, ...
Applied Physics Letters 105 (9), 092106, 2014
192014
A study of the inclusion of prelayers in InGaN/GaN single‐and multiple‐quantum‐well structures
MJ Davies, P Dawson, FCP Massabuau, AL Fol, RA Oliver, MJ Kappers, ...
physica status solidi (b) 252 (5), 866-872, 2015
162015
Atomic layer deposited α-Ga2O3 solar-blind photodetectors
J Moloney, O Tesh, M Singh, JW Roberts, JC Jarman, LC Lee, TN Huq, ...
Journal of Physics D: Applied Physics 52 (47), 475101, 2019
152019
Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures
MJ Davies, FCP Massabuau, P Dawson, RA Oliver, MJ Kappers, ...
physica status solidi (c) 11 (3‐4), 710-713, 2014
152014
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