Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) T Shen, JJ Gu, M Xu, YQ Wu, ML Bolen, MA Capano, LW Engel, PD Ye
Applied Physics Letters 95, 172105, 2009
179 2009 Characterization of atomic-layer-deposited Al2O3∕ GaAs interface improved by NH3 plasma pretreatment HL Lu, L Sun, SJ Ding, M Xu, DW Zhang, LK Wang
Applied physics letters 89 (15), 2006
95 2006 GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited M Xu, R Wang, PD Ye
Electron Device Letters, IEEE, 1-3, 2011
89 2011 High performance deep-submicron inversion-mode InGaAs MOSFETs with maximum Gm exceeding 1.1 mS/µm: New HBr pretreatment and channel engineering YQ Wu, M Xu, RS Wang, O Koybasi, PD Ye
Electron Devices Meeting (IEDM), 2009 IEEE International, 1-4, 2009
82 2009 High-performance surface channel In-rich In0. 75Ga0. 25As MOSFETs with ALD high-k as gate dielectric Y Xuan, T Shen, M Xu, YQ Wu, PD Ye
Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008
81 2008 Metal-oxide-semiconductor field-effect transistors on GaAs (111) A surface with atomic-layer-deposited AlO as gate dielectrics M Xu, YQ Wu, O Koybasi, T Shen, PD Ye
Applied Physics Letters 94, 212104, 2009
63 2009 Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique YQ Wu, M Xu, PD Ye, Z Cheng, J Li, JS Park, J Hydrick, J Bai, M Carroll, ...
Applied Physics Letters 93 (24), 242106-242106-3, 2008
63 2008 Heteroepitaxy of single-crystal LaLuO on GaAs (111) A by atomic layer deposition Y Liu, M Xu, J Heo, DY Peide, RG Gordon
Applied Physics Letters 97, 162910, 2010
60 2010 Band offsets of Al2O3/InxGa1-xAs (x= 0.53 and 0.75) and the effects of postdeposition annealing NV Nguyen, M Xu, OA Kirillov, PD Ye, C Wang, K Cheung, JS Suehle
Applied Physics Letters 96 (5), 052107-052107-3, 2010
47 2010 High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation … JJ Gu, YQ Liu, M Xu, GK Celler, RG Gordon, PD Ye
APPLIED PHYSICS LETTERS 97, 012106, 2010
47 2010 Spectroscopic and electrical properties of atomic layer deposition AlO gate dielectric on surface pretreated Si substrate M Xu, CH Xu, SJ Ding, HL Lu, DW Zhang, LK Wang
Journal of applied physics 99, 074109, 2006
32 2006 New insight into Fermi-level unpinning on GaAs: Impact of different surface orientations M Xu, K Xu, R Contreras, M Milojevic, T Shen, O Koybasi, YQ Wu, ...
Electron Devices Meeting (IEDM), 2009 IEEE International, 1-4, 2009
29 2009 New insights in the passivation of high-k/InP through interface characterization and metal–oxide–semiconductor field effect transistor demonstration: Impact of crystal orientation M Xu, JJ Gu, C Wang, DM Zhernokletov, RM Wallace, PD Ye
Journal of Applied Physics 113 (1), 2013
26 2013 A distributive-transconductance model for border traps in III–V/high-k MOS capacitors C Zhang, M Xu, DY Peide, X Li
IEEE electron device letters 34 (6), 735-737, 2013
24 2013 Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry K Xu, H Sio, OA Kirillov, L Dong, M Xu, PD Ye, D Gundlach, NV Nguyen
Journal of Applied Physics 113 (2), 2013
21 2013 Inversion-mode InxGa1-xAs MOSFETs (x= 0.53, 0.65, 0.75) with atomic-layer-deposited high-k dielectrics PD Ye, Y Xuan, YQ Wu, M Xu
ECS, 2009
20 2009 Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition L Hong-Liang, L Yan-Bo, X Min, D Shi-Jin, S Liang, Z Wei, W Li-Kang
Chinese Physics Letters 23, 1929, 2006
19 2006 Initial surface reactions in atomic layer deposition of Al2O3 on the hydroxylated GaAs (001)-4× 2 surface HL Lu, W Chen, SJ Ding, M Xu, DW Zhang, LK Wang
Journal of Physics: Condensed Matter 17, 7517, 2005
17 2005 ALD High-k as a Common Gate Stack Solution for Nano-electronics PD Ye, JJ Gu, YQ Wu, M Xu, Y Xuan, T Shen, AT Neal
ECS Trans 28 (2), 51-68, 2010
15 2010 Mechanism of interfacial layer suppression after performing surface Al (CH) pretreatment during atomic layer deposition of AlO M Xu, C Zhang, SJ Ding, HL Lu, W Chen, QQ Sun, DW Zhang, LK Wang
Journal of applied physics 100, 106101, 2006
15 2006 