Witold Trzeciakowski
Witold Trzeciakowski
Institute of High Pressure Physics, Polish Academy of Sciences
Bestätigte E-Mail-Adresse bei unipress.waw.pl
Zitiert von
Zitiert von
Tailoring the intersubband absorption in quantum wells
W Trzeciakowski, BD McCombe
Applied physics letters 55 (9), 891-893, 1989
Boundary conditions and interface states in heterostructures
W Trzeciakowski
Physical Review B 38 (6), 4322, 1988
Effective-mass approximation in semiconductor heterostructures: one-dimensional analysis
W Trzeciakowski
Physical Review B 38 (17), 12493, 1988
Fully-screened polarization-induced electric fields in blue∕violet light-emitting devices grown on bulk GaN
G Franssen, T Suski, P Perlin, R Bohdan, A Bercha, W Trzeciakowski, ...
Applied Physics Letters 87 (4), 041109, 2005
Electric-field effects in semiconductor quantum wells
W Trzeciakowski, M Gurioli
Physical Review B 44 (8), 3880, 1991
A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal
T Suski, G Franssen, P Perlin, R Bohdan, A Bercha, P Adamiec, F Dybala, ...
Applied physics letters 84 (8), 1236-1238, 2004
The effect of pressure on the luminescence from GaAs/AlGaAs quantum wells
P Perlin, W Trzeciakowski, E Litwin-Staszewska, J Muszalski, M Micovic
Semiconductor science and technology 9 (12), 2239, 1994
Pressure and temperature tuning of laser diodes
W Trzeciakowski, A Bercha, F Dybala, R Bohdan, P Adamiec, O Mariani
physica status solidi (b) 244 (1), 179-186, 2007
Pressure-tuned diode laser with tuning range
P Adamiec, A Salhi, R Bohdan, A Bercha, F Dybala, W Trzeciakowski, ...
Applied physics letters 85 (19), 4292-4294, 2004
Spectroscopic method of strain analysis in semiconductor quantum-well devices
ML Biermann, S Duran, K Peterson, A Gerhardt, JW Tomm, A Bercha, ...
Journal of applied physics 96 (8), 4056-4065, 2004
Shallow donors in magnetic fields in zinc-blende semiconductors. I. Theory
W Trzeciakowski, S Huant, LC Brunel
Physical Review B 33 (10), 6846, 1986
Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning
R Bohdan, A Bercha, W Trzeciakowski, F Dybała, B Piechal, MB Sanayeh, ...
Journal of Applied Physics 104 (6), 063105, 2008
High accuracy Raman measurements using the Stokes and anti-Stokes lines
W Trzeciakowski, J Martínez-Pastor, A Cantarero
Journal of applied physics 82 (8), 3976-3982, 1997
Density of states in a resonant-tunneling structure
W Trzeciakowski, D Sahu, TF George
Physical Review B 40 (9), 6058, 1989
Shallow donors in magnetic fields in zinc-blende semiconductors. II. Magneto-optical study of InSb under hydrostatic pressure
LC Brunel, S Huant, W Trzeciakowski
Physical Review B 33 (10), 6863, 1986
Wavelength tuning of laser diodes using hydrostatic pressure
F Dybala, P Adamiec, A Bercha, R Bohdan, W Trzeciakowski
Optical Devices for Fiber Communication IV 4989, 181-188, 2003
The effect of pressure on deep impurity states with large lattice relaxation
S Porowski, W Trzeciakowski
physica status solidi (b) 128 (1), 11-22, 1985
Anomalous differential resistance change at the oscillation threshold in quantum-well laser diodes
PG Eliseev, P Adamiec, A Bercha, F Dybala, R Bohdan, ...
IEEE journal of quantum electronics 41 (1), 9-14, 2005
Acceptor and exciton states in InGaAsGaAs strained quantum wells
W Trzeciakowski, AP Roth
Superlattices and microstructures 6 (3), 315-318, 1989
A fiber feedthrough for a semiconductor laser located in a high hydrostatic pressure cell
R Bohdan, A Bercha, P Adamiec, F Dybala, W Trzeciakowski
Instruments and Experimental Techniques 47 (3), 422-424, 2004
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