27.6% conversion efficiency, a new record for single-junction solar cells under 1 sun illumination BM Kayes, H Nie, R Twist, SG Spruytte, F Reinhardt, IC Kizilyalli, ...
2011 37th IEEE Photovoltaic Specialists Conference, 000004-000008, 2011
567 2011 Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing JW Lyding, K Hess, IC Kizilyalli
Applied Physics Letters 68 (18), 2526-2528, 1996
456 1996 Vertical power pn diodes based on bulk GaN IC Kizilyalli, AP Edwards, O Aktas, T Prunty, D Bour
IEEE Transactions on Electron Devices 62 (2), 414-422, 2014
379 2014 1.5-kV and 2.2-m H Nie, Q Diduck, B Alvarez, AP Edwards, BM Kayes, M Zhang, G Ye, ...
IEEE Electron Device Letters 35 (9), 939-941, 2014
362 2014 High voltage vertical GaN pn diodes with avalanche capability IC Kizilyalli, AP Edwards, H Nie, D Disney, D Bour
IEEE Transactions on Electron Devices 60 (10), 3067-3070, 2013
280 2013 Giant isotope effect in hot electron degradation of metal oxide silicon devices K Hess, IC Kizilyalli, JW Lyding
IEEE Transactions on Electron Devices 45 (2), 406-416, 1998
198 1998 Use of SiD4 for deposition of ultra thin and controllable oxides DC Brady, IC Kizilyalli, Y Ma, PK Roy
US Patent 6,025,280, 2000
170 2000 3.7 kV vertical GaN PN diodes IC Kizilyalli, AP Edwards, H Nie, D Bour, T Prunty, D Disney
IEEE Electron Device Letters 35 (2), 247-249, 2013
169 2013 Stacked high-ε gate dielectric for gigascale integration of metal–oxide–semiconductor technologies PK Roy, IC Kizilyalli
Applied Physics Letters 72 (22), 2835-2837, 1998
159 1998 Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability IC Kizilyalli, JW Lyding, K Hess
IEEE Electron Device Letters 18 (3), 81-83, 1997
143 1997 4-kV and 2.8-2 Vertical GaN p-n Diodes With Low Leakage Currents IC Kizilyalli, T Prunty, O Aktas
ieee electron device letters 36 (10), 1073-1075, 2015
137 2015 Vertical GaN power diodes with a bilayer edge termination JR Dickerson, AA Allerman, BN Bryant, AJ Fischer, MP King, MW Moseley, ...
IEEE Transactions on Electron Devices 63 (1), 419-425, 2015
125 2015 Reliability of large periphery GaN-on-Si HFETs S Singhal, T Li, A Chaudhari, AW Hanson, R Therrien, JW Johnson, ...
Microelectronics Reliability 46 (8), 1247-1253, 2006
125 2006 On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing Z Chen, K Hess, J Lee, JW Lyding, E Rosenbaum, I Kizilyalli, S Chetlur, ...
IEEE Electron Device Letters 21 (1), 24-26, 2000
122 2000 Two-dimensional transient simulation of an idealized high electron mobility transistor DJ Widiger, IC Kizilyalli, K Hess, JJ Coleman
IEEE transactions on electron devices 32 (6), 1092-1102, 1985
115 1985 MOS transistors with stacked SiO2 -Ta2 O5 -SiO2 gate dielectrics for giga-scale integration of CMOS technologies IC Kizilyalli, RYS Huang, RK Roy
IEEE Electron Device Letters 19 (11), 423-425, 1998
108 1998 Reliability studies of vertical GaN devices based on bulk GaN substrates IC Kizilyalli, P Bui-Quang, D Disney, H Bhatia, O Aktas
Microelectronics Reliability 55 (9-10), 1654-1661, 2015
106 2015 GaN-on-Si failure mechanisms and reliability improvements S Singhal, JC Roberts, P Rajagopal, T Li, AW Hanson, R Therrien, ...
2006 IEEE International Reliability Physics Symposium Proceedings, 95-98, 2006
93 2006 Avalanche capability of vertical GaN pn junctions on bulk GaN substrates O Aktas, IC Kizilyalli
IEEE Electron Device Letters 36 (9), 890-892, 2015
84 2015 Coupled Electron-Hole Dynamics at the W Wang, G Lüpke, M Di Ventra, ST Pantelides, JM Gilligan, NH Tolk, ...
Physical Review Letters 81 (19), 4224, 1998
84 1998 