Ionizing radiation damage effects on GaN devices SJ Pearton, F Ren, E Patrick, ME Law, AY Polyakov
ECS Journal of solid state science and technology 5 (2), Q35, 2015
376 2015 Gallium antimonide device related properties AG Milnes, AY Polyakov
Solid-state electronics 36 (6), 803-818, 1993
279 1993 Deep traps in GaN-based structures as affecting the performance of GaN devices AY Polyakov, IH Lee
Materials Science and Engineering: R: Reports 94, 1-56, 2015
254 2015 Review of radiation damage in GaN-based materials and devices SJ Pearton, R Deist, F Ren, L Liu, AY Polyakov, J Kim
Journal of Vacuum Science & Technology A 31 (5), 2013
254 2013 Lifetime-limiting defects in n− 4H-SiC epilayers PB Klein, BV Shanabrook, SW Huh, AY Polyakov, M Skowronski, ...
Applied Physics Letters 88 (5), 2006
251 2006 Radiation damage effects in Ga 2 O 3 materials and devices J Kim, SJ Pearton, C Fares, J Yang, F Ren, S Kim, AY Polyakov
Journal of Materials Chemistry C 7 (1), 10-24, 2019
244 2019 Electrical characteristics of Au and Ag Schottky contacts on AY Polyakov, NB Smirnov, EA Kozhukhova, VI Vdovin, K Ip, YW Heo, ...
Applied physics letters 83 (8), 1575-1577, 2003
237 2003 Radiation effects in GaN materials and devices AY Polyakov, SJ Pearton, P Frenzer, F Ren, L Liu, J Kim
Journal of Materials Chemistry C 1 (5), 877-887, 2013
233 2013 Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy F Hamdani, M Yeadon, DJ Smith, H Tang, W Kim, A Salvador, ...
Journal of applied physics 83 (2), 983-990, 1998
162 1998 Indium arsenide: a semiconductor for high speed and electro-optical devices AG Milnes, AY Polyakov
Materials Science and Engineering: B 18 (3), 237-259, 1993
145 1993 Surface-plasmon resonance-enhanced multiphoton emission of high-brightness electron beams from a nanostructured copper cathode RK Li, H To, G Andonian, J Feng, A Polyakov, CM Scoby, K Thompson, ...
Physical review letters 110 (7), 074801, 2013
136 2013 Properties of Si donors and persistent photoconductivity in AlGaN AY Polyakov, NB Smirnov, AV Govorkov, MG Mil'Vidskii, JM Redwing, ...
Solid-State Electronics 42 (4), 627-635, 1998
132 1998 Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, J Yang, F Ren, ...
Applied Physics Letters 112 (3), 2018
131 2018 Reaching the theoretical resonance quality factor limit in coaxial plasmonic nanoresonators fabricated by helium ion lithography M Melli, A Polyakov, D Gargas, C Huynh, L Scipioni, W Bao, DF Ogletree, ...
Nano Letters 13 (6), 2687-2691, 2013
127 2013 VO2 films with strong semiconductor to metal phase transition prepared by the precursor oxidation process M Gurvitch, S Luryi, A Polyakov, A Shabalov, M Dudley, G Wang, S Ge, ...
Journal of Applied Physics 102 (3), 2007
125 2007 Lateral AP Zhang, JW Johnson, F Ren, J Han, AY Polyakov, NB Smirnov, ...
Applied Physics Letters 78 (6), 823-825, 2001
118 2001 Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films AY Polyakov, NB Smirnov, AS Usikov, AV Govorkov, BV Pushniy
Solid-State Electronics 42 (11), 1959-1967, 1998
118 1998 On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy AY Polyakov, M Shin, JA Freitas, M Skowronski, DW Greve, RG Wilson
Journal of Applied Physics 80 (11), 6349-6354, 1996
115 1996 Proton implantation effects on electrical and recombination properties of undoped ZnO AY Polyakov, NB Smirnov, AV Govorkov, EA Kozhukhova, VI Vdovin, K Ip, ...
Journal of applied physics 94 (5), 2895-2900, 2003
110 2003 Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy AY Polyakov, NB Smirnov, AV Govorkov, M Shin, M Skowronski, ...
Journal of applied physics 84 (2), 870-876, 1998
110 1998 
Stephen PeartonProfessor of Materials Science and Engineering, University of FloridaBestätigte E-Mail-Adresse bei mse.ufl.edu
