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Shadi A. Dayeh
Shadi A. Dayeh
Professor of Electrical and Computer Engineering, University of California San Diego
Bestätigte E-Mail-Adresse bei eng.ucsd.edu - Startseite
Titel
Zitiert von
Zitiert von
Jahr
ZnO nanowire UV photodetectors with high internal gain
C Soci, A Zhang, B Xiang, SA Dayeh, DPR Aplin, J Park, XY Bao, YH Lo, ...
Nano letters 7 (4), 1003-1009, 2007
26382007
Anisotropic swelling and fracture of silicon nanowires during lithiation
XH Liu, H Zheng, L Zhong, S Huang, K Karki, LQ Zhang, Y Liu, A Kushima, ...
Nano letters 11 (8), 3312-3318, 2011
7532011
In situ atomic-scale imaging of electrochemical lithiation in silicon
XH Liu, JW Wang, S Huang, F Fan, X Huang, Y Liu, S Krylyuk, J Yoo, ...
Nature nanotechnology 7 (11), 749-756, 2012
5782012
Rational synthesis of p-type zinc oxide nanowire arrays using simple chemical vapor deposition
B Xiang, P Wang, X Zhang, Shadi. A. Dayeh,, DPR Aplin, C Soci, D Yu, ...
Nano letters 7 (2), 323-328, 2007
5412007
Ultrafast electrochemical lithiation of individual Si nanowire anodes
XH Liu, LQ Zhang, L Zhong, Y Liu, H Zheng, JW Wang, JH Cho, ...
Nano letters 11 (6), 2251-2258, 2011
4372011
Adaptable silicon–carbon nanocables sandwiched between reduced graphene oxide sheets as lithium ion battery anodes
B Wang, X Li, X Zhang, B Luo, M Jin, M Liang, SA Dayeh, ST Picraux, ...
ACS nano 7 (2), 1437-1445, 2013
4262013
High electron mobility InAs nanowire field‐effect transistors
SA Dayeh, DPR Aplin, X Zhou, PKL Yu, ET Yu, D Wang
small 3 (2), 326-332, 2007
3782007
Lattice strain effects on the optical properties of MoS2 nanosheets
L Yang, X Cui, J Zhang, K Wang, M Shen, S Zeng, SA Dayeh, L Feng, ...
Scientific reports 4 (1), 1-7, 2014
3082014
Precise semiconductor nanowire placement through dielectrophoresis
S Raychaudhuri, SA Dayeh, D Wang, ET Yu
Nano letters 9 (6), 2260-2266, 2009
2512009
Strain engineering and epitaxial stabilization of halide perovskites
Y Chen, Y Lei, Y Li, Y Yu, J Cai, MH Chiu, R Rao, Y Gu, C Wang, W Choi, ...
Nature 577 (7789), 209-215, 2020
2492020
III-V nanowire growth mechanism: V/III ratio and temperature effects
A Shadi, TY Edward, D Wang
Nano letters 7 (8), 2486-2490, 2007
2152007
Direct observation of nanoscale size effects in Ge semiconductor nanowire growth
SA Dayeh, ST Picraux
Nano letters 10 (10), 4032-4039, 2010
1632010
A fabrication process for flexible single-crystal perovskite devices
Y Lei, Y Chen, R Zhang, Y Li, Q Yan, S Lee, Y Yu, H Tsai, W Choi, ...
Nature 583 (7818), 790-795, 2020
1582020
Growth, defect formation, and morphology control of germanium–silicon semiconductor nanowire heterostructures
SA Dayeh, J Wang, N Li, JY Huang, AV Gin, ST Picraux
Nano letters 11 (10), 4200-4206, 2011
1332011
Influence of surface states on the extraction of transport parameters from InAs nanowire field effect transistors
SA Dayeh, C Soci, PKL Yu, ET Yu, D Wang
Applied Physics Letters 90 (16), 162112, 2007
1302007
High density individually addressable nanowire arrays record intracellular activity from primary rodent and human stem cell derived neurons
R Liu, R Chen, AT Elthakeb, SH Lee, S Hinckley, ML Khraiche, J Scott, ...
Nano letters 17 (5), 2757-2764, 2017
1282017
Micromachined infrared bolometers on flexible polyimide substrates
SA Dayeh, DP Butler, Z Celik-Butler
Sensors and Actuators A: Physical 118 (1), 49-56, 2005
1242005
Heteroepitaxial growth of vertical GaAs nanowires on Si (111) substrates by metal− organic chemical vapor deposition
XY Bao, C Soci, D Susac, J Bratvold, DPR Aplin, W Wei, CY Chen, ...
Nano letters 8 (11), 3755-3760, 2008
1182008
Electron transport in indium arsenide nanowires
SA Dayeh
Semiconductor Science and Technology 25 (2), 024004, 2010
1092010
Surface diffusion and substrate− nanowire adatom exchange in InAs nanowire growth
SA Dayeh, ET Yu, D Wang
Nano letters 9 (5), 1967-1972, 2009
1062009
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