A review of Ga2 O3 materials, processing, and devices SJ Pearton, J Yang, PH Cary IV, F Ren, J Kim, MJ Tadjer, MA Mastro
Applied Physics Reviews 5 (1), 011301, 2018
1732 2018 Wide band gap ferromagnetic semiconductors and oxides SJ Pearton, CR Abernathy, ME Overberg, GT Thaler, DP Norton, ...
Journal of Applied Physics 93 (1), 1-13, 2003
1179 2003 Magnetic properties of n -GaMnN thin films GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 80 (21), 3964-3966, 2002
448 2002 Perspective: Ga2 O3 for ultra-high power rectifiers and MOSFETS SJ Pearton, F Ren, M Tadjer, J Kim
Journal of Applied Physics 124 (22), 220901, 2018
406 2018 Perspective—opportunities and future directions for Ga2O3 MA Mastro, A Kuramata, J Calkins, J Kim, F Ren, SJ Pearton
ECS Journal of Solid State Science and Technology 6 (5), P356, 2017
371 2017 Graphene-based nitrogen dioxide gas sensors G Ko, HY Kim, J Ahn, YM Park, KY Lee, J Kim
Current Applied Physics 10 (4), 1002-1004, 2010
364 2010 Influence of MgO and B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ...
Applied Physics Letters 80 (9), 1661-1663, 2002
216 2002 Review of radiation damage in GaN-based materials and devices SJ Pearton, R Deist, F Ren, L Liu, AY Polyakov, J Kim
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (5 …, 2013
208 2013 Solid-State Electron QZ Liu, SS Lau
205 * 1998 Radiation effects in GaN materials and devices AY Polyakov, SJ Pearton, P Frenzer, F Ren, L Liu, J Kim
Journal of Materials Chemistry C 1 (5), 877-887, 2013
194 2013 High Responsivity β-Ga2 O3 Metal–Semiconductor–Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes S Oh, CK Kim, J Kim
Acs Photonics 5 (3), 1123-1128, 2017
187 2017 AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using R Mehandru, B Luo, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied physics letters 82 (15), 2530-2532, 2003
167 2003 High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2 O3 J Yang, S Ahn, F Ren, SJ Pearton, S Jang, J Kim, A Kuramata
Applied Physics Letters 110 (19), 192101, 2017
164 2017 Exfoliated β-Ga 2 O 3 nano-belt field-effect transistors for air-stable high power and high temperature electronics J Kim, S Oh, MA Mastro, J Kim
Physical Chemistry Chemical Physics 18 (23), 15760-15764, 2016
151 2016 Flexible graphene-based chemical sensors on paper substrates G Yang, C Lee, J Kim, F Ren, SJ Pearton
Physical Chemistry Chemical Physics 15 (6), 1798-1801, 2013
148 2013 Radiation damage effects in Ga 2 O 3 materials and devices J Kim, SJ Pearton, C Fares, J Yang, F Ren, S Kim, AY Polyakov
Journal of Materials Chemistry C 7 (1), 10-24, 2019
139 2019 Y Irokawa, Y Nakano, M Ishiko, T Kachi, J Kim, F Ren, BP Gila, ...
Applied physics letters 84 (15), 2919-2921, 2004
134 2004 Characteristics of MgO/GaN gate-controlled metal–oxide–semiconductor diodes J Kim, R Mehandru, B Luo, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied Physics Letters 80 (24), 4555-4557, 2002
128 2002 Gadolinium oxide and scandium oxide: gate dielectrics for GaN MOSFETs BP Gila, JW Johnson, R Mehandru, B Luo, AH Onstine, V Krishnamoorthy, ...
physica status solidi (a) 188 (1), 239-242, 2001
116 2001 Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes BJ Kim, C Lee, Y Jung, K Hyeon Baik, MA Mastro, JK Hite, CR Eddy Jr, ...
Applied Physics Letters 99 (14), 143101, 2011
113 2011 
Fan RenUniversity of Florida, Bell Lab, AT&TBestätigte E-Mail-Adresse bei che.ufl.edu
