| The electronic band structure of Ge1− xSnx in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein–Moss effect MP Polak, P Scharoch, R Kudrawiec Journal of Physics D: Applied Physics 50 (19), 195103, 2017 | 105 | 2017 |
| First-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data MP Polak, P Scharoch, R Kudrawiec Semiconductor Science and Technology 30 (9), 094001, 2015 | 104 | 2015 |
| Quantum-size effect in thin Al (110) slabs A Kiejna, J Peisert, P Scharoch Surface science 432 (1-2), 54-60, 1999 | 76 | 1999 |
| Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions F Dybała, MP Polak, J Kopaczek, P Scharoch, K Wu, S Tongay, ... Scientific reports 6 (1), 26663, 2016 | 66 | 2016 |
| Experimental and theoretical studies of band gap alignment in GaAs1− xBix/GaAs quantum wells R Kudrawiec, J Kopaczek, MP Polak, P Scharoch, M Gladysiewicz, ... Journal of Applied Physics 116 (23), 2014 | 63 | 2014 |
| Direct optical transitions at K-and H-point of Brillouin zone in bulk MoS2, MoSe2, WS2, and WSe2 J Kopaczek, MP Polak, P Scharoch, K Wu, B Chen, S Tongay, ... Journal of Applied Physics 119 (23), 2016 | 58 | 2016 |
| Theoretical and experimental studies of electronic band structure for GaSb1− xBix in the dilute Bi regime MP Polak, P Scharoch, R Kudrawiec, J Kopaczek, MJ Winiarski, ... Journal of Physics D: Applied Physics 47 (35), 355107, 2014 | 54 | 2014 |
| Electronic band structure of compressively strained Ge1− xSnx with x< 0.11 studied by contactless electroreflectance K Zelazna, MP Polak, P Scharoch, J Serafinczuk, M Gladysiewicz, ... Applied Physics Letters 106 (14), 2015 | 41 | 2015 |
| Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP1− xBix dilute bismide with x≤ 0.034 J Kopaczek, R Kudrawiec, MP Polak, P Scharoch, M Birkett, TD Veal, ... Applied Physics Letters 105 (22), 2014 | 41 | 2014 |
| Ab initio study of InxGa1− xN–Performance of the alchemical mixing approximation P Scharoch, MJ Winiarski, MP Polak Computational materials science 81, 358-365, 2014 | 28 | 2014 |
| Nesting-like band gap in bismuth sulfide Bi 2 S 3 WM Linhart, SJ Zelewski, P Scharoch, F Dybała, R Kudrawiec Journal of Materials Chemistry C 9 (39), 13733-13738, 2021 | 23 | 2021 |
| Anisotropic optical properties of GeS investigated by optical absorption and photoreflectance A Tołłoczko, R Oliva, T Woźniak, J Kopaczek, P Scharoch, R Kudrawiec Materials Advances 1 (6), 1886-1894, 2020 | 22 | 2020 |
| Hidden spin-polarized bands in semiconducting 2H-MoTe2 R Oliva, T Woźniak, F Dybala, J Kopaczek, P Scharoch, R Kudrawiec Materials Research Letters 8 (2), 75-81, 2020 | 20 | 2020 |
| An efficient method of DFT/LDA band-gap correction P Scharoch, M Winiarski Computer Physics Communications 184 (12), 2680-2683, 2013 | 20 | 2013 |
| Impact ionisation threshold energy surfaces for anisotropic band structures in semiconductors AR Beattie, P Scharoch, RA Abram Semiconductor science and technology 4 (9), 715, 1989 | 18 | 1989 |
| Valley polarization investigation of GeS under high pressure R Oliva, T Woźniak, F Dybala, A Tołłoczko, J Kopaczek, P Scharoch, ... Physical Review B 101 (23), 235205, 2020 | 14 | 2020 |
| First principles prediction of structural and electronic properties of TlxIn1− xN alloy MJ Winiarski, P Scharoch, MP Polak Journal of alloys and compounds 613, 33-36, 2014 | 14 | 2014 |
| Realistic evaluation of impact ionisation and Auger recombination rates for the ccch transition in InSb and InGaAsP AR Beattie, RA Abram, P Scharoch Semiconductor science and technology 5 (7), 738, 1990 | 14 | 1990 |
| Anomalous band-gap bowing of AlN1− xPx alloy MJ Winiarski, M Polak, P Scharoch Journal of alloys and compounds 575, 158-161, 2013 | 13 | 2013 |
| A method of determining the overlap integrals used in calculations of Auger transition rates in semiconductors P Scharoch, RA Abram Semiconductor science and technology 3 (10), 973, 1988 | 12 | 1988 |
