Suresh Sundaram
Suresh Sundaram
Researcher, Georgia tech Lorraine
Bestätigte E-Mail-Adresse bei georgiatech-metz.fr - Startseite
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Zitiert von
Zitiert von
Jahr
Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials
J Shim, SH Bae, W Kong, D Lee, K Qiao, D Nezich, YJ Park, R Zhao, ...
Science, 2018
922018
Bandgap energy bowing parameter of strained and relaxed InGaN layers
G Orsal, Y El Gmili, N Fressengeas, J Streque, R Djerboub, T Moudakir, ...
Optical Materials Express 4 (5), 1030-1041, 2014
812014
Polarity governs atomic interaction through two-dimensional materials
W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ...
Nature Materials, 2018
722018
Large-area two-dimensional layered hexagonal boron nitride grown on sapphire by metalorganic vapor phase epitaxy
X Li, S Sundaram, YE Gmili, T Ayari, R Puybaret, G Patriarche, PL Voss, ...
Crystal Growth and Design, 2016
652016
Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN
T Ayari, S Sundaram, X Li, YE Gmili, PL Voss, JP Salvestrini, ...
Applied Physics letters 108, 171106, 2016
532016
Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
K Pantzas, Y El Gmili, J Dickerson, S Gautier, L Largeau, O Mauguin, ...
Journal of crystal growth 370, 57-62, 2013
512013
Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems
YHCBASSSVAPVJPSA Ougazzaden
Sensors 16 (3), 273, 2016
482016
Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study
Y El Gmili, G Orsal, K Pantzas, T Moudakir, S Sundaram, G Patriarche, ...
Acta Materialia 61 (17), 6587-6596, 2013
472013
BAlN thin layers for deep UV applications
X Li, S Sundaram, YE Gmili, T Moudakir, F Genty, S Bouchoule, ...
physica status solidi (a) 212 (4), 745-750, 2015
362015
Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications
T Ayari, C Bishop, MB Jordan, S Sundaram, X Li, S Alam, Y ElGmili, ...
Scientific reports 7 (1), 1-8, 2017
352017
MOVPE grown periodic AlN/BAlN heterostructure with high boron content
X Li, S Sundaram, Y El Gmili, F Genty, S Bouchoule, G Patriache, ...
Journal of Crystal Growth 414, 119-122, 2015
352015
AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm
X Li, S Sundaram, P Disseix, G Le Gac, S Bouchoule, G Patriarche, ...
Optical Materials Express 5 (2), 380-392, 2015
342015
Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE
X Li, MB Jordan, T Ayari, S Sundaram, Y El Gmili, S Alam, M Alam, ...
Scientific reports 7 (1), 1-8, 2017
332017
Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy
K Pantzas, G Patriarche, D Troadec, S Gautier, T Moudakir, S Suresh, ...
Nanotechnology 23 (45), 455707, 2012
302012
Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors
C Bishop, JP Salvestrini, Y Halfaya, S Sundaram, Y El Gmili, L Pradere, ...
Applied Physics Letters 106 (24), 243504, 2015
242015
Improving InGaN heterojunction solar cells efficiency using a semi bulk absorber
M Arif, W Elhuni, J Streque, S Sundaram, S Belahsene, YE Gmili, X li, ...
Solar Energy Materials and Solar Cells, 2017
232017
Experimental study and device design of NO, NO2, and NH3 gas detection for a wide dynamic and large temperature range using Pt/AlGaN/GaN HEMT
C Bishop, Y Halfaya, A Soltani, S Sundaram, X Li, J Streque, YE Gmili, ...
IEEE Sensors, 2016
232016
Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells
V Gorge, A Migan-Dubois, Z Djebbour, K Pantzas, S Gautier, T Moudakir, ...
Materials Science and Engineering: B 178 (2), 142-148, 2013
222013
Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer …
S Gautier, T Moudakir, G Patriarche, DJ Rogers, VE Sandana, ...
Journal of Crystal Growth 370, 63-67, 2013
222013
Microstructural and electrical investigation of Pd/Au ohmic contact on p-GaN
AR Sofiane Belahsene, Gilles Patriarche, David Troadec, Suresh Sundaram ...
Journal of Vacuum Science & Technology B, 33, 010603, 2015
212015
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