Modulation of electronic and mechanical properties of phosphorene through strain M Elahi, K Khaliji, SM Tabatabaei, M Pourfath, R Asgari
Physical Review B 91 (11), 115412, 2015
196 2015 High sensitive and selective flexible H M Asad, MH Sheikhi, M Pourfath, M Moradi
Sensors and Actuators B: Chemical 210, 1-8, 2015
142 2015 Highly anisotropic thermal conductivity of arsenene: An ab initio study M Zeraati, SM Vaez Allaei, I Abdolhosseini Sarsari, M Pourfath, ...
Physical Review B 93 (8), 085424, 2016
135 2016 The non-equilibrium Green's function method for nanoscale device simulation M Pourfath
Springer, 2014
126 2014 Titanium Carbide MXene as NH3 Sensor: Realistic First-Principles Study P Khakbaz, M Moshayedi, S Hajian, M Soleimani, BB Narakathu, ...
The Journal of Physical Chemistry C 123 (49), 29794-29803, 2019
116 2019 Engineering enhanced thermoelectric properties in zigzag graphene nanoribbons H Karamitaheri, N Neophytou, M Pourfath, R Faez, H Kosina
Journal of Applied Physics 111 (5), 2012
116 2012 Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX M Hosseini, M Elahi, M Pourfath, D Esseni
IEEE Transactions on Electron Devices 62 (10), 3192-3198, 2015
110 2015 Geometrical effects on the thermoelectric properties of ballistic graphene antidot lattices H Karamitaheri, M Pourfath, R Faez, H Kosina
Journal of Applied Physics 110 (5), 2011
87 2011 Method for predicting f LC Castro, DL John, DL Pulfrey, M Pourfath, A Gehring, H Kosina
IEEE transactions on nanotechnology 4 (6), 699-704, 2005
72 2005 A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons A Yazdanpanah, M Pourfath, M Fathipour, H Kosina, S Selberherr
Electron Devices, IEEE Transactions on 59 (2), 433-440, 2012
70 2012 A first-principles study on the effect of biaxial strain on the ultimate performance of monolayer MoS2-based double gate field effect transistor S Mohammad Tabatabaei, M Noei, K Khaliji, M Pourfath, M Fathipour
Journal of Applied Physics 113 (16), 2013
69 2013 Strain induced mobility modulation in single-layer MoS M Hosseini, M Elahi, M Pourfath, D Esseni
Journal of Physics D: Applied Physics 48 (37), 375104, 2015
68 2015 Device performance of graphene nanoribbon field-effect transistors in the presence of line-edge roughness AY Goharrizi, M Pourfath, M Fathipour, H Kosina
IEEE Transactions on electron devices 59 (12), 3527-3532, 2012
68 2012 Performance assessment of nanoscale field-effect diodes N Manavizadeh, F Raissi, EA Soleimani, M Pourfath, S Selberherr
IEEE Transactions on Electron Devices 58 (8), 2378-2384, 2011
55 2011 A multi-purpose Schrödinger-Poisson solver for TCAD applications M Karner, A Gehring, S Holzer, M Pourfath, M Wagner, W Goes, ...
Journal of Computational Electronics 6, 179-182, 2007
55 2007 Ferroelectricity and phase transitions in In M Soleimani, M Pourfath
Nanoscale 12 (44), 22688-22697, 2020
50 2020 Impact of Different Ratios of Fluorine, Oxygen, and Hydroxyl Surface Terminations on Ti S Hajian, P Khakbaz, M Moshayedi, D Maddipatla, BB Narakathu, ...
2018 IEEE SENSORS, 1-4, 2018
48 2018 Very large strain gauges based on single layer MoSe M Hosseini, M Elahi, M Pourfath, D Esseni
Applied Physics Letters 107 (25), 253503, 2015
47 2015 An analytical model for line-edge roughness limited mobility of graphene nanoribbons AY Goharrizi, M Pourfath, M Fathipour, H Kosina, S Selberherr
IEEE transactions on electron devices 58 (11), 3725-3735, 2011
41 2011 A comparative study of tunneling FETs based on graphene and GNR heterostructures N Ghobadi, M Pourfath
IEEE Transactions on Electron Devices 61 (1), 186-192, 2013
39 2013 