T.M. Smeeton
T.M. Smeeton
Vice President, Research at Envisics
Bestätigte E-Mail-Adresse bei envisics.com - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys
Applied Physics Letters 83 (26), 5419-5421, 2003
3262003
Optical and microstructural studies of single-quantum-well structures
DM Graham, A Soltani-Vala, P Dawson, MJ Godfrey, TM Smeeton, ...
Journal of applied physics 97 (10), 103508, 2005
2442005
Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering
ME Vickers, MJ Kappers, TM Smeeton, EJ Thrush, JS Barnard, ...
Journal of applied physics 94 (3), 1565-1574, 2003
1272003
In-plane imperfections in GaN studied by x-ray diffraction
ME Vickers, MJ Kappers, R Datta, C McAleese, TM Smeeton, ...
Journal of Physics D: Applied Physics 38 (10A), A99, 2005
1032005
Design of a creep resistant nickel base superalloy for power plant applications: Part 1-Mechanical properties modelling
F Tancret, H Bhadeshia, DJC MacKay
Materials Science and Technology 19 (3), 283-290, 2003
782003
The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy.
TM Smeeton, CJ Humphreys, JS Barnard, MJ Kappers
Journal of materials science 41 (9), 2006
572006
Strong carrier confinement in In x Ga 1− x N∕ Ga N quantum dots grown by molecular beam epitaxy
M Sénès, KL Smith, TM Smeeton, SE Hooper, J Heffernan
Physical Review B 75 (4), 045314, 2007
472007
Design of a creep resistant nickel base superalloy for power plant applications: Part 3-Experimental results
F Tancret, T Sourmail, MA Yescas, RW Evans, C McAleese, L Singh, ...
Materials science and technology 19 (3), 296-302, 2003
372003
Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy
M Kauer, SE Hooper, V Bousquet, K Johnson, C Zellweger, JM Barnes, ...
Electronics Letters 41 (13), 739-741, 2005
362005
Analysis of InGaN/GaN single quantum wells by X‐ray scattering and transmission electron microscopy
TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys
physica status solidi (b) 240 (2), 297-300, 2003
362003
Degradation of laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings
M Rossetti, TM Smeeton, WS Tan, M Kauer, SE Hooper, J Heffernan, ...
Applied Physics Letters 92 (15), 151110, 2008
352008
Semiconductor device and a method of manufacture thereof
TM Smeeton, KL Smith, MX Sénès, SE Hooper
US Patent 8,334,157, 2012
232012
Exciton localization in InGaN/GaN single quantum well structures
DM Graham, AS Vala, P Dawson, MJ Godfrey, MJ Kappers, TM Smeeton, ...
physica status solidi (b) 240 (2), 344-347, 2003
222003
AlInGaN light-emitting device
KL Smith, MX Sénès, TM Smeeton, SE Hooper
US Patent 7,858,962, 2010
192010
Synthesis of widely tunable and highly luminescent zinc nitride nanocrystals
PN Taylor, MA Schreuder, TM Smeeton, AJD Grundy, JAR Dimmock, ...
Journal of Materials Chemistry C 2 (22), 4379-4382, 2014
182014
Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy
SE Bennett, TM Smeeton, DW Saxey, GDW Smith, SE Hooper, ...
Journal of Applied Physics 111 (5), 053508, 2012
142012
Deep ultraviolet (UVC) laser for sterilisation and fluorescence applications
EA Boardman, LSW Huang, JJ Robson-Hemmings, TM Smeeton, ...
Sharp technical report, 31, 2012
132012
Ultraviolet treatment device
TM Smeeton, EA Boardman, SE Hooper
US Patent App. 13/651,803, 2014
122014
A compact breath acetone analyser based on an ultraviolet light emitting diode
J Li, TM Smeeton, M Zanola, J Barrett, V Berryman-Bousquet
Sensors and Actuators B: Chemical 273, 76-82, 2018
112018
High-power and long-lifetime InGaN blue–violet laser diodes grown by molecular beam epitaxy
WS Tan, M Kauer, SE Hooper, JM Barnes, M Rossetti, TM Smeeton, ...
Electronics Letters 44 (5), 351-353, 2008
112008
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