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Cammy R Abernathy
Cammy R Abernathy
Bestätigte E-Mail-Adresse bei eng.ufl.edu
Titel
Zitiert von
Zitiert von
Jahr
Wide band gap ferromagnetic semiconductors and oxides
SJ Pearton, CR Abernathy, ME Overberg, GT Thaler, DP Norton, ...
Journal of Applied Physics 93 (1), 1-13, 2003
12162003
Advances in wide bandgap materials for semiconductor spintronics
SJ Pearton, CR Abernathy, DP Norton, AF Hebard, YD Park, LA Boatner, ...
Materials Science and Engineering: R: Reports 40 (4), 137-168, 2003
5692003
Magnetic properties of n-GaMnN thin films
GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 80 (21), 3964-3966, 2002
4542002
Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN
ME Overberg, CR Abernathy, SJ Pearton, NA Theodoropoulou, ...
Applied Physics Letters 79 (9), 1312-1314, 2001
3852001
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
SR Lee, AM West, AA Allerman, KE Waldrip, DM Follstaedt, PP Provencio, ...
Applied Physics Letters 86 (24), 241904, 2005
3512005
Magnetic and structural properties of Mn-implanted GaN
N Theodoropoulou, AF Hebard, ME Overberg, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 78 (22), 3475-3477, 2001
3342001
Effect of temperature on metal–oxide–semiconductor field-effect transistors
F Ren, M Hong, SNG Chu, MA Marcus, MJ Schurman, A Baca, SJ Pearton, ...
Applied Physics Letters 73 (26), 3893-3895, 1998
2871998
Effect of temperature on Ga {sub 2} O {sub 3}(Gd {sub 2} O {sub 3})/GaN metal {endash} oxide {endash} semiconductor field-effect transistors
F Ren, M Hong, SN Chu, MA Marcus, MJ Schurman, A Baca, SJ Pearton, ...
Applied Physics Letters 73 (26), 1998
2861998
Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn) P: C
N Theodoropoulou, AF Hebard, ME Overberg, CR Abernathy, SJ Pearton, ...
Physical review letters 89 (10), 107203, 2002
2762002
1.54‐μm photoluminescence from Er‐implanted GaN and AlN
RG Wilson, RN Schwartz, CR Abernathy, SJ Pearton, N Newman, ...
Applied Physics Letters 65 (8), 992-994, 1994
2731994
Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy
CR Abernathy, SJ Pearton, R Caruso, F Ren, J Kovalchik
Applied Physics Letters 55 (17), 1750-1752, 1989
2601989
Wet chemical etching of AlN
JR Mileham, SJ Pearton, CR Abernathy, JD MacKenzie, RJ Shul, ...
Applied physics letters 67 (8), 1119-1121, 1995
2391995
Influence of MgO and passivation on AlGaN/GaN high-electron-mobility transistors
B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ...
Applied Physics Letters 80 (9), 1661-1663, 2002
2212002
Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN
SJ Pearton, CR Abernathy, F Ren
Applied physics letters 64 (17), 2294-2296, 1994
2211994
Wide bandgap GaN-based semiconductors for spintronics
SJ Pearton, CR Abernathy, GT Thaler, RM Frazier, DP Norton, F Ren, ...
Journal of Physics: Condensed Matter 16 (7), R209, 2004
1922004
Gallium nitride processing for electronics, sensors and spintronics
SJ Pearton, CR Abernathy, F Ren
Springer Science & Business Media, 2006
1902006
Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy
SJ Pearton, CR Abernathy, F Ren, JR Lothian, PW Wisk, A Katz
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 11 (4 …, 1993
182*1993
CCl4 doping of GaN grown by metalorganic molecular beam epitaxy
CR Abernathy, JD MacKenzie, SJ Pearton, WS Hobson
Applied physics letters 66 (15), 1969-1971, 1995
177*1995
AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using as the gate oxide and surface passivation
R Mehandru, B Luo, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied physics letters 82 (15), 2530-2532, 2003
1742003
High-density plasma etching of compound semiconductors
RJ Shul, GB McClellan, RD Briggs, DJ Rieger, SJ Pearton, CR Abernathy, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 15 (3 …, 1997
1721997
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