Amir Sammak
Zitiert von
Zitiert von
Strong spin-photon coupling in silicon
N Samkharadze, G Zheng, N Kalhor, D Brousse, A Sammak, UC Mendes, ...
Science 359 (6380), 1123-1127, 2018
Fast two-qubit logic with holes in germanium
NW Hendrickx, DP Franke, A Sammak, G Scappucci, M Veldhorst
Nature 577 (7791), 487-491, 2020
Deep vertical etching of silicon wafers using a hydrogenation-assisted reactive ion etching
A Sammak, S Azimi, N Izadi, BK Hosseinieh, S Mohajerzadeh
Journal of microelectromechanical systems 16 (4), 912-918, 2007
Gate-controlled quantum dots and superconductivity in planar germanium
NW Hendrickx, DP Franke, A Sammak, M Kouwenhoven, D Sabbagh, ...
Nature communications 9 (1), 1-7, 2018
Rapid gate-based spin read-out in silicon using an on-chip resonator
G Zheng, N Samkharadze, ML Noordam, N Kalhor, D Brousse, A Sammak, ...
Nature nanotechnology 14 (8), 742-746, 2019
Robust UV/VUV/EUV PureB photodiode detector technology with high CMOS compatibility
LK Nanver, L Qi, V Mohammadi, KRM Mok, WB De Boer, N Golshani, ...
IEEE Journal of Selected Topics in Quantum Electronics 20 (6), 306-316, 2014
Germanium quantum-Well Josephson field-effect transistors and interferometers
F Vigneau, R Mizokuchi, DC Zanuz, X Huang, S Tan, R Maurand, S Frolov, ...
Nano letters 19 (2), 1023-1027, 2019
Quantum dot arrays in silicon and germanium
WIL Lawrie, HGJ Eenink, NW Hendrickx, JM Boter, L Petit, SV Amitonov, ...
Applied Physics Letters 116 (8), 080501, 2020
Shallow and undoped germanium quantum wells: a playground for spin and hybrid quantum technology
A Sammak, D Sabbagh, NW Hendrickx, M Lodari, B Paquelet Wuetz, ...
Advanced Functional Materials 29 (14), 1807613, 2019
VUV/Low-Energy Electron Si Photodiodes With Postmetal 400 PureB Deposition
V Mohammadi, L Qi, N Golshani, CKR Mok, WB de Boer, A Sammak, ...
IEEE Electron Device Letters 34 (12), 1545-1547, 2013
Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices
LK Nanver, A Sammak, V Mohammadi, KRC Mok, L Qi, A Šakić, ...
ECS Transactions 49 (1), 25, 2012
A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths
A Sammak, M Aminian, L Qi, WB De Boer, E Charbon, LK Nanver
2011 International Electron Devices Meeting, 8.5. 1-8.5. 4, 2011
Light effective hole mass in undoped Ge/SiGe quantum wells
M Lodari, A Tosato, D Sabbagh, MA Schubert, G Capellini, A Sammak, ...
Physical Review B 100 (4), 041304, 2019
19.1 a scalable cryo-CMOS 2-to-20GHz digitally intensive controller for 4× 32 frequency multiplexed spin qubits/transmons in 22nm FinFET technology for quantum computers
B Patra, JPG Van Dijk, S Subramanian, A Corna, X Xue, C Jeon, F Sheikh, ...
2020 IEEE International Solid-State Circuits Conference-(ISSCC), 304-306, 2020
A single-hole spin qubit
NW Hendrickx, WIL Lawrie, L Petit, A Sammak, G Scappucci, M Veldhorst
Nature communications 11 (1), 1-6, 2020
Ballistic supercurrent discretization and micrometer-long Josephson coupling in germanium
NW Hendrickx, MLV Tagliaferri, M Kouwenhoven, R Li, DP Franke, ...
Physical Review B 99 (7), 075435, 2019
Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration
C Porret, A Hikavyy, JFG Granados, S Baudot, A Vohra, B Kunert, ...
ECS Journal of Solid State Science and Technology 8 (8), P392, 2019
Merging standard CVD techniques for GaAs and Si epitaxial growth
A Sammak, W De Boer, A Van den Bogaard, L Nanver
ECS Transactions 28 (5), 237, 2010
PureGaB p+ n Ge diodes grown in large windows to Si with a sub-300 nm transition region
A Sammak, L Qi, WB de Boer, LK Nanver
Solid-state electronics 74, 126-133, 2012
Rapid high-fidelity gate-based spin read-out in silicon
G Zheng, N Samkharadze, ML Noordam, N Kalhor, D Brousse, A Sammak, ...
arXiv preprint arXiv:1901.00687, 2019
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