| Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire Y Li, S You, M Zhu, L Zhao, W Hou, T Detchprohm, Y Taniguchi, ... Applied Physics Letters 98 (15), 2011 | 239 | 2011 |
| Green light emitting diodes on a-plane GaN bulk substrates T Detchprohm, M Zhu, Y Li, Y Xia, C Wetzel, EA Preble, L Liu, T Paskova, ... Applied Physics Letters 92 (24), 2008 | 101 | 2008 |
| Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates T Detchprohm, M Zhu, Y Li, L Zhao, S You, C Wetzel, EA Preble, ... Applied Physics Letters 96 (5), 2010 | 81 | 2010 |
| Light-emitting diode development on polar and non-polar GaN substrates C Wetzel, M Zhu, J Senawiratne, T Detchprohm, PD Persans, L Liu, ... Journal of Crystal Growth 310 (17), 3987-3991, 2008 | 80 | 2008 |
| Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes J Senawiratne, A Chatterjee, T Detchprohm, W Zhao, Y Li, M Zhu, Y Xia, ... Thin Solid Films 518 (6), 1732-1736, 2010 | 48 | 2010 |
| Junction temperature measurements and thermal modeling of GaInN/GaN quantum well light-emitting diodes J Senawiratne, Y Li, M Zhu, Y Xia, W Zhao, T Detchprohm, A Chatterjee, ... Journal of Electronic Materials 37, 607-610, 2008 | 47 | 2008 |
| Highly polarized green light emitting diode in m-axis GaInN/GaN S You, T Detchprohm, M Zhu, W Hou, EA Preble, D Hanser, T Paskova, ... Applied physics express 3 (10), 102103, 2010 | 43 | 2010 |
| Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes M Zhu, S You, T Detchprohm, T Paskova, EA Preble, D Hanser, C Wetzel Physical Review B 81 (12), 125325, 2010 | 39 | 2010 |
| Aluminum-nitride buffer and active layers by physical vapor deposition M Zhu, NB Patibandla, R Wang, V Agrawal, A Subramani, DL Diehl, ... US Patent 10,109,481, 2018 | 29 | 2018 |
| Boosting green GaInN/GaN light-emitting diode performance by a GaInN underlying layer Y Xia, W Hou, L Zhao, M Zhu, T Detchprohm, C Wetzel IEEE transactions on electron devices 57 (10), 2639-2643, 2010 | 29 | 2010 |
| Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth T Detchprohm, Y Xia, Y Xi, M Zhu, W Zhao, Y Li, EF Schubert, L Liu, ... Journal of crystal growth 298, 272-275, 2007 | 28 | 2007 |
| PVD buffer layers for LED fabrication M Zhu, R Wang, NB Patibandia, X Tang, V Agrawal, CH Tsai, M Rasheed, ... US Patent 9,396,933, 2016 | 27 | 2016 |
| Enhanced device performance of GaInN‐based deep green light emitting diodes with V‐defect‐free active region T Detchprohm, M Zhu, W Zhao, Y Wang, Y Li, Y Xia, C Wetzel physica status solidi c 6 (S2 2), S840-S843, 2009 | 27 | 2009 |
| Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes M Zhu, S You, T Detchprohm, T Paskova, EA Preble, C Wetzel physica status solidi (a) 207 (6), 1305-1308, 2010 | 25 | 2010 |
| Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates T Detchprohm, M Zhu, Y Li, Y Xia, L Liu, D Hanser, C Wetzel Journal of Crystal Growth 311 (10), 2937-2941, 2009 | 22 | 2009 |
| Improved performance of GaInN based deep green light emitting diodes through V‐defect reduction T Detchprohm, M Zhu, Y Xia, Y Li, W Zhao, J Senawiratne, C Wetzel physica status solidi (c) 5 (6), 2207-2209, 2008 | 22 | 2008 |
| Junction temperature analysis in green light emitting diode dies on sapphire and GaN substrates J Senawiratne, W Zhao, T Detchprohm, A Chatterjee, Y Li, M Zhu, Y Xia, ... physica status solidi (c) 5 (6), 2247-2249, 2008 | 20 | 2008 |
| GALLIUM NITRIDE-BASED LED FABRICATION WITH PVD-FORMED ALUMINUM NITRIDE BUFFER LAYER M Zhu, V Agrawal, NB Patibandla, O Nalamasu US Patent App. 13/036,273, 2011 | 19 | 2011 |
| Ultrathin epitaxial NbN superconducting films with high upper critical field grown at low temperature X Wei, P Roy, Z Yang, D Zhang, Z He, P Lu, O Licata, H Wang, ... Materials Research Letters 9 (8), 336-342, 2021 | 12 | 2021 |
| Characterization of GaInN/GaN layers for green emitting laser diodes C Wetzel, Y Li, J Senawiratne, M Zhu, Y Xia, S Tomasulo, PD Persans, ... Journal of Crystal Growth 311 (10), 2942-2947, 2009 | 12 | 2009 |
