Gain mechanism in GaN Schottky ultraviolet detectors O Katz, V Garber, B Meyler, G Bahir, J Salzman
Applied physics letters 79 (10), 1417-1419, 2001
343 2001 Ion‐beam‐assisted lift‐off technique for three‐dimensional micromachining of freestanding single‐crystal diamond P Olivero, S Rubanov, P Reichart, BC Gibson, ST Huntington, J Rabeau, ...
Advanced Materials 17 (20), 2427-2430, 2005
216 2005 Yellow luminescence and related deep levels in unintentionally doped GaN films I Shalish, L Kronik, G Segal, Y Rosenwaks, Y Shapira, U Tisch, J Salzman
Physical Review B 59 (15), 9748, 1999
191 1999 Properties of carbon-doped GaN H Tang, JB Webb, JA Bardwell, S Raymond, J Salzman, C Uzan-Saguy
Applied Physics Letters 78 (6), 757-759, 2001
183 2001 The anomalous bandgap bowing in GaAsN U Tisch, E Finkman, J Salzman
Applied physics letters 81 (3), 463-465, 2002
168 2002 Dependence of the refractive index of on temperature and composition at elevated temperatures U Tisch, B Meyler, O Katz, E Finkman, J Salzman
Journal of Applied Physics 89 (5), 2676-2685, 2001
166 2001 Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors O Katz, G Bahir, J Salzman
Applied physics letters 84 (20), 4092-4094, 2004
144 2004 Diamond based photonic crystal microcavities S Tomljenovic-Hanic, MJ Steel, CM de Sterke, J Salzman
Optics Express 14 (8), 3556-3562, 2006
139 2006 Characterization of three-dimensional microstructures in single-crystal diamond P Olivero, S Rubanov, P Reichart, BC Gibson, ST Huntington, JR Rabeau, ...
Diamond and related materials 15 (10), 1614-1621, 2006
122 2006 Electron mobility in an AlGaN/GaN two-dimensional electron gas. I. Carrier concentration dependent mobility O Katz, A Horn, G Bahir, J Salzman
IEEE Transactions on electron devices 50 (10), 2002-2008, 2003
114 2003 Surface states and surface oxide in GaN layers I Shalish, Y Shapira, L Burstein, J Salzman
Journal of Applied Physics 89 (1), 390-395, 2001
109 2001 Thermal microcrack distribution control in GaN layers on Si substrates by lateral confined epitaxy S Zamir, B Meyler, J Salzman
Applied Physics Letters 78 (3), 288-290, 2001
102 2001 Interrupted synthetic aperture radar (SAR) J Salzman, D Akamine, R Lefevre, JC Kirk
IEEE aerospace and electronic systems magazine 17 (5), 33-39, 2002
99 2002 Processing of photonic crystal nanocavity for quantum information in diamond I Bayn, B Meyler, A Lahav, J Salzman, R Kalish, BA Fairchild, S Prawer, ...
Diamond and related materials 20 (7), 937-943, 2011
93 2011 Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy S Zamir, B Meyler, J Salzman
Journal of crystal growth 243 (3-4), 375-380, 2002
91 2002 Fabrication and performance of 1.5 μm GaInAsP travelling-wave laser amplifiers with angled facets CE Zah, JS Osinski, C Caneau, SG Menocal, LA Reith, J Salzman, ...
Electronics Letters 19 (23), 990-992, 1987
87 1987 The effect of AlN buffer layer on GaN grown on (1 1 1)-oriented Si substrates by MOCVD S Zamir, B Meyler, E Zolotoyabko, J Salzman
Journal of crystal growth 218 (2-4), 181-190, 2000
86 2000 Self-stabilized nonlinear lateral modes of broad area lasers D Mehuys, R Lang, M Mittelstein, J Salzman, A Yariv
IEEE journal of quantum electronics 23 (11), 1909-1920, 1987
84 1987 Triangular nanobeam photonic cavities in single-crystal diamond I Bayn, B Meyler, J Salzman, R Kalish
New Journal of Physics 13 (2), 025018, 2011
80 2011 Unstable resonator cavity semiconductor lasers J Salzman, T Venkatesan, R Lang, M Mittelstein, A Yariv
Applied physics letters 46 (3), 218-220, 1985
80 1985