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Pratyush Buragohain
Pratyush Buragohain
Bestätigte E-Mail-Adresse bei huskers.unl.edu
Titel
Zitiert von
Zitiert von
Jahr
Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si
A Chernikova, M Kozodaev, A Markeev, D Negrov, M Spiridonov, ...
ACS applied materials & interfaces 8 (11), 7232-7237, 2016
1722016
Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors
P Buragohain, C Richter, T Schenk, H Lu, T Mikolajick, U Schroeder, ...
Applied Physics Letters 112 (22), 222901, 2018
692018
Ferroelectricity in Hf0.5Zr0.5O2 Thin Films: A Microscopic Study of the Polarization Switching Phenomenon and Field-Induced Phase Transformations
A Chouprik, S Zakharchenko, M Spiridonov, S Zarubin, A Chernikova, ...
ACS applied materials & interfaces 10 (10), 8818-8826, 2018
482018
Fluid Imprint and Inertial Switching in Ferroelectric La:HfO2 Capacitors
P Buragohain, A Erickson, P Kariuki, T Mittmann, C Richter, PD Lomenzo, ...
ACS applied materials & interfaces 11 (38), 35115-35121, 2019
432019
Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions
M Abuwasib, H Lu, T Li, P Buragohain, H Lee, CB Eom, A Gruverman, ...
Applied Physics Letters 108 (15), 152904, 2016
282016
Voltage controlled Néel vector rotation in zero magnetic field
A Mahmood, W Echtenkamp, M Street, JL Wang, S Cao, T Komesu, ...
Nature communications 12 (1), 1-8, 2021
122021
Probing Antiferroelectric‐Ferroelectric Phase Transitions in PbZrO3 Capacitors by Piezoresponse Force Microscopy
H Lu, S Glinsek, P Buragohain, E Defay, J Iñiguez, A Gruverman
Advanced Functional Materials 30 (45), 2003622, 2020
102020
Harnessing Phase Transitions in Antiferroelectric ZrO2 Using the Size Effect
PD Lomenzo, M Materano, T Mittmann, P Buragohain, A Gruverman, ...
Advanced Electronic Materials 8 (1), 2100556, 2022
72022
Electroresistance effect in MoS2-Hf0.5Zr0.5O2 heterojunctions
P Chaudhary, P Buragohain, M Kozodaev, S Zarubin, V Mikheev, ...
Applied Physics Letters 118 (8), 083106, 2021
72021
Piezoelectricity in hafnia
S Dutta, P Buragohain, S Glinsek, C Richter, H Aramberri, H Lu, ...
Nature communications 12 (1), 1-10, 2021
62021
5Zr0. 5O2 ferroelectric films on Si, ACS Appl. Mater
A Chernikova, M Kozodaev, A Markeev, D Negrov, M Spiridonov, ...
Interfaces 8 (11), 2016
62016
Effect of Film Microstructure on Domain Nucleation and Intrinsic Switching in Ferroelectric Y: HfO2 Thin Film Capacitors
P Buragohain, A Erickson, T Mimura, T Shimizu, H Funakubo, ...
Advanced Functional Materials, 2108876, 2021
22021
Investigation of local and integral polarization switching behavior of ultrathin HfObased films
P Buragohain, O Bak, A Chernikova, A Zenkevich, U Schroeder, ...
Bulletin of the American Physical Society 62, 2017
22017
Absence of critical thickness in improper ferroelectric hexagonal-YbFeO3 thin films
X Xu, Y Yun, P Buragohain, A Thind, Y Yin, X Li, X Jiang, R Mishra, ...
12020
Intrinsic ferroelectricity in Y-doped HfO2 thin films
Y Yun, P Buragohain, M Li, Z Ahmadi, Y Zhang, X Li, H Wang, J Li, P Lu, ...
Nature Materials 21 (8), 903-909, 2022
2022
Persistent opto-ferroelectric responses in molecular ferroelectrics
X Jiang, X Wang, P Buragohain, AT Clark, H Lu, S Poddar, L Yu, ...
Physical Review Materials 6 (7), 074412, 2022
2022
Voltage-controlled Néel vector rotation in zero magnetic field in high-TN magnetoelectric thin films
SQA Shah, A Mahmood, W Echtenkamp, J Wang, M Street, T Komesu, ...
Bulletin of the American Physical Society, 2022
2022
Nanoscale Studies of the Ferroelectric and Electromechanical Properties of Hafnia-based Capacitors
P Buragohain
2022
Persistent Ionic Photo-responses and Frank-Condon Mechanism in Proton-transfer Ferroelectrics
X Jiang, X Wang, P Buragohain, A Clark, H Lu, S Poddar, L Yu, ...
arXiv preprint arXiv:2105.02628, 2021
2021
Voltage controlled Néel vector rotation in zero magnetic field at CMOS-compatible temperatures
A Mahmood, W Echtenkamp, M Street, JL Wang, S Cao, T Komesu, ...
2020
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