| InGaN/Dilute-As GaNAs interface quantum well for red emitters CK Tan, D Borovac, W Sun, N Tansu Scientific reports 6 (1), 19271, 2016 | 41 | 2016 |
| Large optical gain AlInN-delta-GaN quantum well for deep ultraviolet emitters CK Tan, W Sun, D Borovac, N Tansu Scientific reports 6 (1), 22983, 2016 | 37 | 2016 |
| Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers SA Al Muyeed, W Sun, MR Peart, RM Lentz, X Wei, D Borovac, R Song, ... Journal of Applied Physics 126 (21), 2019 | 21 | 2019 |
| First-Principle Electronic Properties of Dilute-P GaN1−xPx Alloy for Visible Light Emitters CK Tan, D Borovac, W Sun, N Tansu Scientific Reports 6 (1), 24412, 2016 | 18 | 2016 |
| On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE D Borovac, W Sun, R Song, JJ Wierer Jr, N Tansu Journal of Crystal Growth 533, 125469, 2020 | 12 | 2020 |
| Thermal oxidation of AlInN for III-nitride electronic and optoelectronic devices MR Peart, X Wei, D Borovac, W Sun, N Tansu, JJ Wierer Jr ACS Applied Electronic Materials 1 (8), 1367-1371, 2019 | 11 | 2019 |
| Band anti-crossing model in dilute-As GaNAs alloys JC Goodrich, D Borovac, CK Tan, N Tansu Scientific Reports 9 (1), 5128, 2019 | 11 | 2019 |
| Dilute-As AlNAs alloy for deep-ultraviolet emitter CK Tan, D Borovac, W Sun, N Tansu Scientific Reports 6 (1), 22215, 2016 | 10 | 2016 |
| Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy D Borovac, W Sun, MR Peart, R Song, JJ Wierer Jr, N Tansu Journal of Crystal Growth 548, 125847, 2020 | 8 | 2020 |
| First-Principle Study of the Optical Properties of Dilute-P GaN1−xPx Alloys D Borovac, CK Tan, N Tansu Scientific Reports 8 (1), 6025, 2018 | 8 | 2018 |
| Investigations of the optical properties of GaNAs alloys by first-principle D Borovac, CK Tan, N Tansu Scientific Reports 7 (1), 17285, 2017 | 8 | 2017 |
| AlInN/GaN diodes for power electronic devices MR Peart, D Borovac, W Sun, R Song, N Tansu, JJ Wierer Applied Physics Express 13 (9), 091006, 2020 | 7 | 2020 |
| Thermal oxidation rates and resulting optical constants of Al0. 83In0. 17N films grown on GaN E Palmese, MR Peart, D Borovac, R Song, N Tansu, JJ Wierer Journal of Applied Physics 129 (12), 2021 | 5 | 2021 |
| First-principle electronic properties of dilute-P AlNP deep ultraviolet semiconductor D Borovac, CK Tan, N Tansu AIP Advances 8 (8), 2018 | 4 | 2018 |
| Electronic properties of dilute-As InGaNAs alloys: A first-principles study D Borovac, W Sun, CK Tan, N Tansu Journal of Applied Physics 127 (1), 2020 | 3 | 2020 |
| Recombination Rates of InxGa1−xN/AlyGa1−yN/GaN Multiple Quantum Wells Emitting From 640 to 565 nm SA Al Muyeed, D Borovac, H Xue, X Wei, R Song, N Tansu, JJ Wierer IEEE Journal of Quantum Electronics 57 (6), 1-7, 2021 | 2 | 2021 |
| Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates SA Al Muyeed, X Wei, D Borovac, R Song, N Tansu, JJ Wierer Jr Journal of Crystal Growth 540, 125652, 2020 | 2 | 2020 |
| InGaN semiconductor laser diodes for the visible spectral range: design and process optimization of single emitters and bars for applications from mW to kW output power S Gerhard, L Nähle, B Jentzsch, H König, E Reiger, U Heine, S Tautz, ... Gallium Nitride Materials and Devices XVIII 12421, 110-118, 2023 | 1 | 2023 |
| Dilute-As InGaNAs/GaN Quantum Wells for High-Efficiency Red Emitters W Sun, H Fu, D Borovac, JC Goodrich, CK Tan, N Tansu IEEE Journal of Quantum Electronics 58 (2), 1-6, 2022 | 1 | 2022 |
| Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission IE Fragkos, W Sun, D Borovac, R Song, JJ Wierer, N Tansu IEEE Journal of Quantum Electronics 58 (2), 1-6, 2022 | 1 | 2022 |
