John Jarman
John Jarman
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Wafer-scale fabrication of non-polar mesoporous GaN distributed Bragg reflectors via electrochemical porosification
T Zhu, Y Liu, T Ding, WY Fu, J Jarman, CX Ren, RV Kumar, RA Oliver
Scientific reports 7 (1), 1-8, 2017
Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots
T Wang, TJ Puchtler, T Zhu, JC Jarman, LP Nuttall, RA Oliver, RA Taylor
Nanoscale 9 (27), 9421-9427, 2017
Suitability of analytical methods to measure solubility for the purpose of nanoregulation
R Tantra, H Bouwmeester, E Bolea, C Rey-Castro, CA David, JM Dogné, ...
Nanotoxicology 10 (2), 173-184, 2016
α-Ga2O3 grown by low temperature atomic layer deposition on sapphire
JW Roberts, JC Jarman, DN Johnstone, PA Midgley, PR Chalker, ...
Journal of Crystal Growth 487, 23-27, 2018
Improvement of single photon emission from InGaN QDs embedded in porous micropillars
HP Springbett, K Gao, J Jarman, T Zhu, M Holmes, Y Arakawa, RA Oliver
Applied Physics Letters 113 (10), 101107, 2018
Atomic layer deposited α-Ga2O3 solar-blind photodetectors
J Moloney, O Tesh, M Singh, JW Roberts, JC Jarman, LC Lee, TN Huq, ...
Journal of Physics D: Applied Physics 52 (47), 475101, 2019
Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures
T Wang, TJ Puchtler, SK Patra, T Zhu, JC Jarman, RA Oliver, S Schulz, ...
Scientific reports 7 (1), 1-9, 2017
Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot
CC Kocher, TJ Puchtler, JC Jarman, T Zhu, T Wang, L Nuttall, RA Oliver, ...
Applied Physics Letters 111 (25), 251108, 2017
High‐temperature performance of non‐polar (11–20) InGaN quantum dots grown by a quasi‐two‐temperature method
T Wang, TJ Puchtler, T Zhu, JC Jarman, RA Oliver, RA Taylor
physica status solidi (b) 254 (8), 1600724, 2017
Temperature-dependent fine structure splitting in InGaN quantum dots
T Wang, TJ Puchtler, T Zhu, JC Jarman, CC Kocher, RA Oliver, RA Taylor
Applied Physics Letters 111 (5), 053101, 2017
Nanomaterial syntheses
R Tantra, KN Robinson, JC Jarman, T Sainsbury
Nanomaterial Characterization: Introduction, An, 25-48, 2016
Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates
JC Jarman, T Zhu, PH Griffin, RA Oliver
Japanese Journal of Applied Physics 58 (SC), SCCC14, 2019
On-chip thermal insulation using porous GaN
BF Spiridon, PH Griffin, JC Jarman, Y Liu, T Zhu, AD Luca, RA Oliver, ...
Multidisciplinary Digital Publishing Institute Proceedings 2 (13), 776, 2018
Reduction of radiative lifetime and slow-timescale spectral diffusion in InGaN polarized single-photon sources
T Wang, T Zhu, TJ Puchtler, CC Kocher, HP Springbett, JC Jarman, ...
arXiv preprint arXiv:1909.09056, 2019
Role of standard documents in advancing the standardization of microfluidics connectors
R Tantra, H van Heeren, J Jarman
Journal of Micro/Nanolithography, MEMS, and MOEMS 15 (2), 020501, 2016
μTAS (micro total analysis systems) for the high-throughput measurement of nanomaterial solubility
R Tantra, J Jarman
Journal of Physics: Conference Series 429 (1), 012011, 2013
Performance Analysis on a Flux Coupling Superconducting Fault Current Limiter (SFCL) Considering the Power Grid Integration Based on MATLAB/SIMULINK
J Zhu, Y Zhao, P Chen, J Gong, X Zhao, S Jiang, S Wang
2018 IEEE International Conference on Applied Superconductivity and …, 2018
0-Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification
T Zhu, Y Liu, T Ding, WY Fu, J Jarman, CX Ren, RV Kumar, RA Oliver
An ultrafast polarised single photon source at 220 K
T Wang, TJ Puchtler, T Zhu, JC Jarman, LP Nuttall, RA Oliver, RA Taylor
arXiv preprint arXiv:1610.00152, 2016
Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride
HL Stern, J Jarman, Q Gu, SE Barker, N Mendelson, D Chugh, S Schott, ...
arXiv preprint arXiv:2103.16494, 2021
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20