| Comparison of combinational and sequential error rates for a deep submicron process NN Mahatme, S Jagannathan, TD Loveless, LW Massengill, BL Bhuva, ... IEEE Transactions on Nuclear Science 58 (6), 2719-2725, 2011 | 183 | 2011 |
| Impact of technology scaling on SRAM soft error rates I Chatterjee, B Narasimham, NN Mahatme, BL Bhuva, RA Reed, ... IEEE Transactions on Nuclear Science 61 (6), 3512-3518, 2014 | 95 | 2014 |
| The contribution of low-energy protons to the total on-orbit SEU rate NA Dodds, MJ Martinez, PE Dodd, MR Shaneyfelt, FW Sexton, JD Black, ... IEEE Transactions on Nuclear Science 62 (6), 2440-2451, 2015 | 90 | 2015 |
| Geometry dependence of total-dose effects in bulk FinFETs I Chatterjee, EX Zhang, BL Bhuva, RA Reed, ML Alles, NN Mahatme, ... IEEE Transactions on Nuclear Science 61 (6), 2951-2958, 2014 | 75 | 2014 |
| Impact of technology scaling on the combinational logic soft error rate NN Mahatme, NJ Gaspard, T Assis, S Jagannathan, I Chatterjee, ... 2014 IEEE international reliability physics symposium, 5F. 2.1-5F. 2.6, 2014 | 72 | 2014 |
| Frequency dependence of alpha-particle induced soft error rates of flip-flops in 40-nm CMOS technology S Jagannathan, TD Loveless, BL Bhuva, NJ Gaspard, N Mahatme, ... IEEE Transactions on Nuclear Science 59 (6), 2796-2802, 2012 | 64 | 2012 |
| Impact of supply voltage and frequency on the soft error rate of logic circuits NN Mahatme, NJ Gaspard, S Jagannathan, TD Loveless, BL Bhuva, ... IEEE Transactions on Nuclear Science 60 (6), 4200-4206, 2013 | 56 | 2013 |
| Analysis of soft error rates in combinational and sequential logic and implications of hardening for advanced technologies NN Mahatme, I Chatterjee, BL Bhuva, J Ahlbin, LW Massengill, R Shuler 2010 IEEE International Reliability Physics Symposium, 1031-1035, 2010 | 51 | 2010 |
| Single-event charge collection and upset in 40-nm dual-and triple-well bulk CMOS SRAMs I Chatterjee, B Narasimham, NN Mahatme, BL Bhuva, RD Schrimpf, ... IEEE Transactions on Nuclear Science 58 (6), 2761-2767, 2011 | 50 | 2011 |
| An SEU-tolerant DICE latch design with feedback transistors HB Wang, YQ Li, L Chen, LX Li, R Liu, S Baeg, N Mahatme, BL Bhuva, ... IEEE Transactions on Nuclear Science 62 (2), 548-554, 2015 | 48 | 2015 |
| Reliability-aware synthesis of combinational logic with minimal performance penalty DB Limbrick, NN Mahatme, WH Robinson, BL Bhuva IEEE Transactions on nuclear science 60 (4), 2776-2781, 2013 | 42 | 2013 |
| Temperature dependence of soft error rate in flip-flop designs S Jagannathan, Z Diggins, N Mahatme, TD Loveless, BL Bhuva, SJ Wen, ... 2012 IEEE International Reliability Physics Symposium (IRPS), SE. 2.1-SE. 2.6, 2012 | 35 | 2012 |
| Effects of threshold voltage variations on single-event upset response of sequential circuits at advanced technology nodes H Zhang, H Jiang, TR Assis, NN Mahatme, B Narasimham, LW Massengill, ... IEEE Transactions on Nuclear Science 64 (1), 457-463, 2016 | 34 | 2016 |
| Analysis of multiple cell upsets due to neutrons in SRAMs for a deep-N-well process N Mahatme, B Bhuva, YP Fang, A Oates 2011 International Reliability Physics Symposium, SE. 7.1-SE. 7.6, 2011 | 30 | 2011 |
| Impact of strained-Si PMOS transistors on SRAM soft error rates NN Mahatme, BL Bhuva, YP Fang, AS Oates IEEE Transactions on Nuclear Science 59 (4), 845-850, 2012 | 29 | 2012 |
| Single-event upset characterization across temperature and supply voltage for a 20-nm bulk planar CMOS technology JS Kauppila, WH Kay, TD Haeffner, DL Rauch, TR Assis, NN Mahatme, ... IEEE Transactions on Nuclear Science 62 (6), 2613-2619, 2015 | 28 | 2015 |
| SRAM based physically unclonable function and method for generating a PUF response NN Mahatme, S Jagannathan, A Hoefler US Patent 9,947,391, 2018 | 25 | 2018 |
| Effects of total-ionizing-dose irradiation on SEU-and SET-induced soft errors in bulk 40-nm sequential circuits RM Chen, ZJ Diggins, NN Mahatme, L Wang, EX Zhang, YP Chen, YN Liu, ... IEEE Transactions on Nuclear Science 64 (1), 471-476, 2016 | 25 | 2016 |
| Single-event transient sensitivity evaluation of clock networks at 28-nm CMOS technology HB Wang, N Mahatme, L Chen, M Newton, YQ Li, R Liu, M Chen, ... IEEE Transactions on Nuclear Science 63 (1), 385-391, 2016 | 25 | 2016 |
| Sensitivity of high-frequency RF circuits to total ionizing dose degradation S Jagannathan, TD Loveless, EX Zhang, DM Fleetwood, RD Schrimpf, ... IEEE Transactions on Nuclear Science 60 (6), 4498-4504, 2013 | 25 | 2013 |
