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Ian T. Ferguson
Ian T. Ferguson
Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University
Bestätigte E-Mail-Adresse bei kennesaw.edu
Titel
Zitiert von
Zitiert von
Jahr
Design and characterization of solar cells
O Jani, I Ferguson, C Honsberg, S Kurtz
Applied Physics Letters 91 (13), 132117, 2007
6752007
Effects of blue light on the circadian system and eye physiology
G Tosini, I Ferguson, K Tsubota
Molecular vision 22, 61, 2016
4962016
Very high efficiency solar cell modules
A Barnett, D Kirkpatrick, C Honsberg, D Moore, M Wanlass, K Emery, ...
Progress in Photovoltaics: Research and Applications 17 (1), 75-83, 2009
2682009
High quality AIN and GaN epilayers grown on (00⋅ 1) sapphire,(100), and (111) silicon substrates
P Kung, A Saxler, X Zhang, D Walker, TC Wang, I Ferguson, M Razeghi
Applied Physics Letters 66 (22), 2958-2960, 1995
2551995
Single-crystal aluminum nitride nanomechanical resonators
AN Cleland, M Pophristic, I Ferguson
Applied Physics Letters 79 (13), 2070-2072, 2001
2402001
Spatial characterization of doped SiC wafers by Raman spectroscopy
JC Burton, L Sun, M Pophristic, SJ Lukacs, FH Long, ZC Feng, ...
Journal of Applied Physics 84 (11), 6268-6273, 1998
2211998
Magnetic properties of bulk and single crystals
MH Kane, K Shalini, CJ Summers, R Varatharajan, J Nause, CR Vestal, ...
Journal of Applied Physics 97 (2), 023906, 2005
1762005
First-and second-order Raman scattering from semi-insulating 4 H− SiC
JC Burton, L Sun, FH Long, ZC Feng, IT Ferguson
Physical Review B 59 (11), 7282, 1999
1681999
Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy
DI Florescu, VM Asnin, FH Pollak, AM Jones, JC Ramer, MJ Schurman, ...
Applied Physics Letters 77 (10), 1464-1466, 2000
1522000
Handbook of zinc oxide and related materials: volume two, devices and nano-engineering
ZC Feng
CRC press, 2012
1462012
Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes
DZ Garbuzov, JC Connolly, RF Karlicek Jr, IT Ferguson
US Patent 6,404,125, 2002
1242002
Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN
M Wraback, H Shen, JC Carrano, T Li, JC Campbell, MJ Schurman, ...
Applied Physics Letters 76 (9), 1155-1157, 2000
1222000
Zinc oxide as an active n-layer and antireflection coating for silicon based heterojunction solar cell
B Hussain, A Ebong, I Ferguson
Solar Energy Materials and Solar Cells 139, 95-100, 2015
1192015
Effect of surface treatment on thermal stability of the hemp-PLA composites: Correlation of activation energy with thermal degradation
S Oza, H Ning, I Ferguson, N Lu
Composites Part B: Engineering 67, 227-232, 2014
1162014
Time-resolved photoluminescence measurements of InGaN light-emitting diodes
M Pophristic, FH Long, C Tran, IT Ferguson, RF Karlicek Jr
Applied Physics Letters 73 (24), 3550-3552, 1998
1161998
III-nitrides for energy production: photovoltaic and thermoelectric applications
N Lu, I Ferguson
Semiconductor Science and Technology 28 (7), 074023, 2013
1142013
Metal oxides for thermoelectric power generation and beyond
Y Feng, X Jiang, E Ghafari, B Kucukgok, C Zhang, I Ferguson, N Lu
Advanced Composites and Hybrid Materials 1, 114-126, 2018
1132018
High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope
VM Asnin, FH Pollak, J Ramer, M Schurman, I Ferguson
Applied physics letters 75 (9), 1240-1242, 1999
1051999
Electrical and magneto-optical of MBE InAs on GaAs
PD Wang, SN Holmes, T Le, RA Stradling, IT Ferguson, AG De Oliveira
Semiconductor science and technology 7 (6), 767, 1992
971992
Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate
Z Liu, T Wei, E Guo, X Yi, L Wang, J Wang, G Wang, Y Shi, I Ferguson, ...
Applied Physics Letters 99 (9), 091104, 2011
892011
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