GaN-based diodes and transistors for chemical, gas, biological and pressure sensing SJ Pearton, BS Kang, S Kim, F Ren, BP Gila, CR Abernathy, J Lin, ...
Journal of Physics: Condensed Matter 16 (29), R961, 2004
448 2004 Magnetic properties of n-GaMnN thin films GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 80 (21), 3964-3966, 2002
448 2002 Rectification at graphene-semiconductor interfaces: zero-gap semiconductor-based diodes S Tongay, M Lemaitre, X Miao, B Gila, BR Appleton, AF Hebard
Physical Review X 2 (1), 011002, 2012
396 2012 Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ...
Applied physics letters 80 (9), 1661-1663, 2002
224 2002 Electrical transport properties of single ZnO nanorods YW Heo, LC Tien, DP Norton, BS Kang, F Ren, BP Gila, SJ Pearton
Applied Physics Letters 85 (11), 2002-2004, 2004
216 2004 Electrical transport properties of single ZnO nanorods YW Heo, LC Tien, DP Norton, BS Kang, F Ren, BP Gila, SJ Pearton
Applied Physics Letters 85 (11), 2002-2004, 2004
216 2004 AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using R Mehandru, B Luo, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied physics letters 82 (15), 2530-2532, 2003
178 2003 Pressure-induced changes in the conductivity of AlGaN∕ GaN high-electron mobility-transistor membranes BS Kang, S Kim, F Ren, JW Johnson, RJ Therrien, P Rajagopal, ...
Applied physics letters 85 (14), 2962-2964, 2004
165 2004 Graphene/GaN Schottky diodes: Stability at elevated temperatures S Tongay, M Lemaitre, T Schumann, K Berke, BR Appleton, B Gila, ...
Applied Physics Letters 99 (10), 102102, 2011
151 2011 Hydrogen and ozone gas sensing using multiple ZnO nanorods BS Kang, YW Heo, LC Tien, DP Norton, F Ren, BP Gila, SJ Pearton
Applied Physics A 80 (5), 1029-1032, 2005
150 2005 Gd2O3/GaN metal-oxide-semiconductor field-effect transistor JW Johnson, B Luo, F Ren, BP Gila, W Krishnamoorthy, CR Abernathy, ...
Applied Physics Letters 77 (20), 3230-3232, 2000
143 2000 MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors Y Irokawa, Y Nakano, M Ishiko, T Kachi, J Kim, F Ren, BP Gila, ...
Applied physics letters 84 (15), 2919-2921, 2004
137 2004 Room temperature hydrogen detection using Pd-coated GaN nanowires W Lim, JS Wright, BP Gila, JL Johnson, A Ural, T Anderson, F Ren, ...
Applied Physics Letters 93 (7), 072109, 2008
136 2008 GaN electronics for high power, high temperature applications SJ Pearton, F Ren, AP Zhang, G Dang, XA Cao, KP Lee, H Cho, BP Gila, ...
Materials Science and Engineering: B 82 (1-3), 227-231, 2001
134 2001 Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors MG Lemaitre, EP Donoghue, MA McCarthy, B Liu, S Tongay, B Gila, ...
ACS nano 6 (10), 9095-9102, 2012
127 2012 Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors BS Kang, S Kim, JH Kim, F Ren, K Baik, SJ Pearton, BP Gila, ...
State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and …, 2003
126 2003 Characteristics of MgO/GaN gate-controlled metal–oxide–semiconductor diodes J Kim, R Mehandru, B Luo, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied physics letters 80 (24), 4555-4557, 2002
126 2002 Gadolinium oxide and scandium oxide: gate dielectrics for GaN MOSFETs BP Gila, JW Johnson, R Mehandru, B Luo, AH Onstine, V Krishnamoorthy, ...
physica status solidi (a) 188 (1), 239-242, 2001
120 2001 AlGaN/GaN-based metal–oxide–semiconductor diode-based hydrogen gas sensor BS Kang, F Ren, BP Gila, CR Abernathy, SJ Pearton
Applied physics letters 84 (7), 1123-1125, 2004
116 2004 Indication of hysteresis in AlMnN R Frazier, G Thaler, M Overberg, B Gila, CR Abernathy, SJ Pearton
Applied physics letters 83 (9), 1758-1760, 2003
105 2003 
Fan RenUniversity of Florida, Bell Lab, AT&TBestätigte E-Mail-Adresse bei che.ufl.edu
