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Brent P. Gila
Brent P. Gila
Bestätigte E-Mail-Adresse bei ufl.edu
Titel
Zitiert von
Zitiert von
Jahr
Magnetic properties of n-GaMnN thin films
GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 80 (21), 3964-3966, 2002
4512002
GaN-based diodes and transistors for chemical, gas, biological and pressure sensing
SJ Pearton, BS Kang, S Kim, F Ren, BP Gila, CR Abernathy, J Lin, ...
Journal of Physics: Condensed Matter 16 (29), R961, 2004
4412004
Rectification at graphene-semiconductor interfaces: zero-gap semiconductor-based diodes
S Tongay, M Lemaitre, X Miao, B Gila, BR Appleton, AF Hebard
Physical Review X 2 (1), 011002, 2012
3872012
Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors
B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ...
Applied physics letters 80 (9), 1661-1663, 2002
2222002
Electrical transport properties of single ZnO nanorods
YW Heo, LC Tien, DP Norton, BS Kang, F Ren, BP Gila, SJ Pearton
Applied Physics Letters 85 (11), 2002-2004, 2004
2142004
Electrical transport properties of single ZnO nanorods
YW Heo, LC Tien, DP Norton, BS Kang, F Ren, BP Gila, SJ Pearton
Applied Physics Letters 85 (11), 2002-2004, 2004
2142004
AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using as the gate oxide and surface passivation
R Mehandru, B Luo, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied physics letters 82 (15), 2530-2532, 2003
1752003
Solid-State Electron
J Kim, B Gila, GY Chung, CR Abernathy, SJ Pearton, F Ren
Solid-State Electron. 15 (10), 1121, 1972
1701972
Pressure-induced changes in the conductivity of AlGaN∕ GaN high-electron mobility-transistor membranes
BS Kang, S Kim, F Ren, JW Johnson, RJ Therrien, P Rajagopal, ...
Applied physics letters 85 (14), 2962-2964, 2004
1632004
Hydrogen and ozone gas sensing using multiple ZnO nanorods
BS Kang, YW Heo, LC Tien, DP Norton, F Ren, BP Gila, SJ Pearton
Applied Physics A 80 (5), 1029-1032, 2005
1502005
Graphene/GaN Schottky diodes: Stability at elevated temperatures
S Tongay, M Lemaitre, T Schumann, K Berke, BR Appleton, B Gila, ...
Applied Physics Letters 99 (10), 102102, 2011
1472011
Gd2O3/GaN metal-oxide-semiconductor field-effect transistor
JW Johnson, B Luo, F Ren, BP Gila, W Krishnamoorthy, CR Abernathy, ...
Applied Physics Letters 77 (20), 3230-3232, 2000
1432000
MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors
Y Irokawa, Y Nakano, M Ishiko, T Kachi, J Kim, F Ren, BP Gila, ...
Applied physics letters 84 (15), 2919-2921, 2004
1372004
Room temperature hydrogen detection using Pd-coated GaN nanowires
W Lim, JS Wright, BP Gila, JL Johnson, A Ural, T Anderson, F Ren, ...
Applied Physics Letters 93 (7), 072109, 2008
1342008
GaN electronics for high power, high temperature applications
SJ Pearton, F Ren, AP Zhang, G Dang, XA Cao, KP Lee, H Cho, BP Gila, ...
Materials Science and Engineering: B 82 (1-3), 227-231, 2001
1312001
Characteristics of MgO/GaN gate-controlled metal–oxide–semiconductor diodes
J Kim, R Mehandru, B Luo, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied physics letters 80 (24), 4555-4557, 2002
1262002
Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors
MG Lemaitre, EP Donoghue, MA McCarthy, B Liu, S Tongay, B Gila, ...
ACS nano 6 (10), 9095-9102, 2012
1252012
Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors
BS Kang, S Kim, JH Kim, F Ren, K Baik, SJ Pearton, BP Gila, ...
State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and …, 2003
1192003
Gadolinium oxide and scandium oxide: gate dielectrics for GaN MOSFETs
BP Gila, JW Johnson, R Mehandru, B Luo, AH Onstine, V Krishnamoorthy, ...
physica status solidi (a) 188 (1), 239-242, 2001
1182001
AlGaN/GaN-based metal–oxide–semiconductor diode-based hydrogen gas sensor
BS Kang, F Ren, BP Gila, CR Abernathy, SJ Pearton
Applied physics letters 84 (7), 1123-1125, 2004
1152004
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