Device reliability metric for end-of-life performance optimization based on circuit level assessment A Kerber, P Srinivasan, S Cimino, P Paliwoda, S Chandrashekhar, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 2D-3.1-2D-3.5, 2017
32 2017 Effect of Stress-Induced Degradation in LDMOS MI Mahmud, Z Celik-Butler, P Hao, P Srinivasan, F Hou, BL Amey, ...
IEEE electron device letters 33 (1), 107-109, 2011
20 2011 A Physics-Based Analytical 1/f Noise Model for RESURF LDMOS Transistors MI Mahmud, Z Çelik-Butler, P Hao, P Srinivasan, FC Hou, X Cheng, ...
IEEE, 2013
14 * 2013 Variability of random telegraph noise in analog MOS transistors M Nour, MI Mahmud, Z Çelik-Butler, D Basu, S Tang, FC Hou, R Wise
2013 22nd International Conference on Noise and Fluctuations (ICNF), 1-4, 2013
11 2013 Investigation of degradation in advanced analog MOS technologies MI Mahmud
Electrical Engineering, 2014
9 2014 Experimental analysis of DC and noise parameter degradation in n-channel reduced surface field (RESURF) LDMOS transistors MI Mahmud, Z Çelik-Butler, X Cheng, W Huang, P Hao, P Srinivasan, ...
2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012
5 2012 Low-frequency noise and stress-induced degradation in LDMOS MI Mahmud, Z Çelik-Butler, P Hao, F Hou, B Amey, T Khan, W Huang
2011 21st International Conference on Noise and Fluctuations, 352-355, 2011
5 2011 Reverse body bias dependence of HCI reliability in advanced FinFET MI Mahmud, R Ranjan, KD Lee, PR Perepa, CD Kwon, S Choo, K Choi
2022 IEEE International Reliability Physics Symposium (IRPS), P58-1-P58-4, 2022
4 2022 Determination of active oxide trap density and 1/f noise mechanism in RESURF LDMOS transistors Z Çelik-Butler, MI Mahmud, P Hao, F Hou, BL Amey, S Pendharkar
Solid-State Electronics 111, 141-146, 2015
4 2015 Correlation of 1/ƒ noise and high-voltage-stress-induced degradation in LDMOS MI Mahmud, P Hao, P Srinivasan, F Hou, BL Amey, S Pendharkar, ...
2012 IEEE International Reliability Physics Symposium (IRPS), XT. 4.1-XT. 4.6, 2012
4 2012 Hot Carrier Reliability Improvement of Thicker Gate Oxide nFET Devices in Advanced FinFETs MI Mahmud, A Gupta, M Toledano-Luque, N Mavilla, J Johnson, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019
3 2019 Systematic study of process impact on FinFET reliability R Ranjan, KD Lee, MI Mahmud, MS Rahman, PR Perepa, CB Larow, ...
2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021
2 2021 Reliability-aware FinFET design M Toledano-Luque, P Srinivasan, P Paliwoda, S Cimino, Z Chbili, ...
2019 Electron Devices Technology and Manufacturing Conference (EDTM), 218-221, 2019
2 2019 Review of LDMOS time dependent degradation based on low-frequency noise modeling MI Mahmud, Z Çelik-Butler, P Hao, P Srinivasan, FC Hou
2013 22nd International Conference on Noise and Fluctuations (ICNF), 1-4, 2013
2013 
Purushothaman SrinivasanSenior Member of Tech Staff, GLOBALFOUNDRIESBestätigte E-Mail-Adresse bei GlobalFoundries.com
