Wayne Johnson
Wayne Johnson
Sonstige NamenJW Johnson, W Johnson
Soundside Partners LLC
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
12 W/mm AlGaN-GaN HFETs on silicon substrates
JW Johnson, EL Piner, A Vescan, R Therrien, P Rajagopal, JC Roberts, ...
IEEE Electron Device Letters 25 (7), 459-461, 2004
Influence of MgO and passivation on AlGaN/GaN high-electron-mobility transistors
B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ...
Applied Physics Letters 80 (9), 1661-1663, 2002
1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon
M Zhu, B Song, M Qi, Z Hu, K Nomoto, X Yan, Y Cao, W Johnson, E Kohn, ...
IEEE Electron Device Letters 36 (4), 375-377, 2015
Gallium nitride material devices including an electrode-defining layer and methods of forming the same
JW Johnson, RJ Therrien, A Vescan, JD Brown
US Patent 7,071,498, 2006
Enzymatic glucose detection using ZnO nanorods on the gate region of high electron mobility transistors
BS Kang, HT Wang, F Ren, SJ Pearton, TE Morey, DM Dennis, ...
Applied Physics Letters 91 (25), 252103, 2007
Pressure-induced changes in the conductivity of high-electron mobility-transistor membranes
BS Kang, S Kim, F Ren, JW Johnson, RJ Therrien, P Rajagopal, ...
Applied Physics Letters 85 (14), 2962-2964, 2004
Prostate specific antigen detection using high electron mobility transistors
BS Kang, HT Wang, TP Lele, Y Tseng, F Ren, SJ Pearton, JW Johnson, ...
Applied physics letters 91 (11), 112106, 2007
metal-oxide-semiconductor field-effect transistor
JW Johnson, B Luo, F Ren, BP Gila, W Krishnamoorthy, CR Abernathy, ...
Applied Physics Letters 77 (20), 3230-3232, 2000
Electrical detection of deoxyribonucleic acid hybridization with high electron mobility transistors
BS Kang, SJ Pearton, JJ Chen, F Ren, JW Johnson, RJ Therrien, ...
Applied Physics Letters 89 (12), 122102, 2006
DC and RF performance of proton-irradiated AlGaN/GaN high electron mobility transistors
B Luo, JW Johnson, F Ren, KK Allums, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 79 (14), 2196-2198, 2001
210-GHz InAlN/GaN HEMTs with dielectric-free passivation
R Wang, G Li, O Laboutin, Y Cao, W Johnson, G Snider, P Fay, D Jena, ...
IEEE electron device letters 32 (7), 892-894, 2011
GaN electronics for high power, high temperature applications
SJ Pearton, F Ren, AP Zhang, G Dang, XA Cao, KP Lee, H Cho, BP Gila, ...
Materials Science and Engineering: B 82 (1-3), 227-231, 2001
Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers
JW Johnson, AP Zhang, WB Luo, F Ren, SJ Pearton, SS Park, YJ Park, ...
IEEE Transactions on Electron devices 49 (1), 32-36, 2002
Reliability of large periphery GaN-on-Si HFETs
S Singhal, T Li, A Chaudhari, AW Hanson, R Therrien, JW Johnson, ...
Microelectronics Reliability 46 (8), 1247-1253, 2006
Lateral power rectifiers with 9.7 kV reverse breakdown voltage
AP Zhang, JW Johnson, F Ren, J Han, AY Polyakov, NB Smirnov, ...
Applied Physics Letters 78 (6), 823-825, 2001
Gadolinium oxide and scandium oxide: gate dielectrics for GaN MOSFETs
BP Gila, JW Johnson, R Mehandru, B Luo, AH Onstine, V Krishnamoorthy, ...
physica status solidi (a) 188 (1), 239-242, 2001
Influence of γ-rays on dc performance of AlGaN/GaN high electron mobility transistors
B Luo, JW Johnson, F Ren, KK Allums, CR Abernathy, SJ Pearton, ...
Applied physics letters 80 (4), 604-606, 2002
Fast electrical detection of Hg(II) ions with high electron mobility transistors
HT Wang, BS Kang, TF Chancellor Jr, TP Lele, Y Tseng, F Ren, ...
Applied Physics Letters 91 (4), 042114, 2007
Semiconductor device-based sensors
JW Johnson, EL Piner, KJ Linthicum
US Patent 7,361,946, 2008
Nanowire Channel InAlN/GaN HEMTs With High Linearity ofand
DS Lee, H Wang, A Hsu, M Azize, O Laboutin, Y Cao, JW Johnson, ...
IEEE electron device letters 34 (8), 969-971, 2013
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