Jonathan Barnard
Jonathan Barnard
Experimental Officer, University of York
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys
Applied Physics Letters 83 (26), 5419-5421, 2003
Optical and microstructural studies of single-quantum-well structures
DM Graham, A Soltani-Vala, P Dawson, MJ Godfrey, TM Smeeton, ...
Journal of applied physics 97 (10), 103508, 2005
High-resolution three-dimensional imaging of dislocations
JS Barnard, J Sharp, JR Tong, PA Midgley
Science 313 (5785), 319-319, 2006
Formation of M23C6-type precipitates and chromium-depleted zones in austenite stainless steel
K Kaneko, T Fukunaga, K Yamada, N Nakada, M Kikuchi, Z Saghi, ...
Scripta Materialia 65 (6), 509-512, 2011
Merging Single-Atom-Dispersed Silver and Carbon Nitride to a Joint Electronic System via Copolymerization with Silver Tricyanomethanide
Z Chen, S Pronkin, TP Fellinger, K Kailasam, G Vilé, D Albani, F Krumeich, ...
ACS nano 10 (3), 3166-3175, 2016
Threading plasmonic nanoparticle strings with light
LO Herrmann, VK Valev, C Tserkezis, JS Barnard, S Kasera, ...
Nature communications 5 (1), 1-6, 2014
Microstructure of selective laser melted CM247LC nickel-based superalloy and its evolution through heat treatment
VD Divya, R Muñoz-Moreno, O Messé, JS Barnard, S Baker, T Illston, ...
Materials Characterization 114, 62-74, 2016
Grain-boundary precipitation in Allvac 718Plus
EJ Pickering, H Mathur, A Bhowmik, O Messé, JS Barnard, MC Hardy, ...
Acta Materialia 60 (6-7), 2757-2769, 2012
Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering
ME Vickers, MJ Kappers, TM Smeeton, EJ Thrush, JS Barnard, ...
Journal of applied physics 94 (3), 1565-1574, 2003
On the origin of threading dislocations in GaN films
MA Moram, CS Ghedia, DVS Rao, JS Barnard, Y Zhang, MJ Kappers, ...
Journal of Applied Physics 106 (7), 073513, 2009
Deformation of silicon–insights from microcompression testing at 25–500 C
S Korte, JS Barnard, RJ Stearn, WJ Clegg
International Journal of Plasticity 27 (11), 1853-1866, 2011
Growth and characterisation of GaN with reduced dislocation density
R Datta, MJ Kappers, ME Vickers, JS Barnard, CJ Humphreys
Superlattices and Microstructures 36 (4-6), 393-401, 2004
The Chemical Application of High‐Resolution Electron Tomography: Bright Field or Dark Field?
JM Thomas, PA Midgley, TJV Yates, JS Barnard, R Raja, I Arslan, ...
Angewandte Chemie International Edition 43 (48), 6745-6747, 2004
Organization of nanoparticles in polymer brushes
R Oren, Z Liang, JS Barnard, SC Warren, U Wiesner, WTS Huck
Journal of the American Chemical Society 131 (5), 1670-1671, 2009
Growth and characterisation of semi-polar (1l2¯ 2) InGaN/GaN MQW structures
MJ Kappers, JL Hollander, C McAleese, CF Johnston, RF Broom, ...
Journal of crystal growth 300 (1), 155-159, 2007
Growth and characterisation of semi-polar (1l2¯ 2) InGaN/GaN MQW structures
MJ Kappers, JL Hollander, C McAleese, CF Johnston, RF Broom, ...
Journal of crystal growth 300 (1), 155-159, 2007
High-angle triple-axis specimen holder for three-dimensional diffraction contrast imaging in transmission electron microscopy
S Hata, H Miyazaki, S Miyazaki, M Mitsuhara, M Tanaka, K Kaneko, ...
Ultramicroscopy 111 (8), 1168-1175, 2011
Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography
D Cherns, J Barnard, FA Ponce
Solid state communications 111 (5), 281-285, 1999
The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy.
TM Smeeton, CJ Humphreys, JS Barnard, MJ Kappers
Journal of materials science 41 (9), 2006
Three-dimensional analysis of dislocation networks in GaN using weak-beam dark-field electron tomography
JS Barnard, J Sharp, JR Tong, PA Midgley
Philosophical Magazine 86 (29-31), 4901-4922, 2006
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