Semiconductor device having a vertical insulated gate field effect device and a breakdown region remote from the gate AL Goodyear, KM Hutchings
US Patent 5,656,843, 1997
97 1997 Method of manufacturing a semiconductor device comprising an insulated gate field effect device KM Hutchings, KR Whight
US Patent 5,378,655, 1995
93 1995 Method of manufacturing a semiconductor device comprising an insulated gate field effect device KM Hutchings, AL Goodyear, AM Warwick
US Patent 5,387,528, 1995
42 1995 The reduction of hematite to wustite in a laboratory fluidized bed RD Doherty, KM Hutchings, JD Smith, S Yörük
Metallurgical Transactions B 16, 425-432, 1985
34 1985 The low-temperature analysis of narrow GaAs/AlGaAs heterojunction wires JP Bird, ADC Grassie, M Lakrimi, KM Hutchings, P Meeson, JJ Harris, ...
Journal of Physics: Condensed Matter 3 (17), 2897, 1991
33 1991 Semiconductor component having two integrated insulated gate field effect devices KM Hutchings, AL Goodyear, PA Gough
US Patent 5,352,915, 1994
31 1994 Method of forming a semiconductor device having a vertical insulated gate FET and a breakdown region remote from the gate AL Goodyear, KM Hutchings
US Patent 5,527,720, 1996
25 1996 Shubnikov-de Haas effect in submicron-width heterojunction wires ADC Grassie, KM Hutchings, M Lakrimi, CT Foxon, JJ Harris
Physical Review B 36 (8), 4551, 1987
23 1987 Reduction of hematite in a bubbling fluidized bed using H2, CO, and H2-CO mixtures KM Hutchings, JD Smith, S Yörük, RJ Hawkins
Ironmaking & steelmaking 14 (3), 103-109, 1987
23 1987 Use of methane in a fluidised bed during reduction of iron ore KM Hutchings, JD Smith, RJ Hawkins
Ironmaking Steelmaking;(United Kingdom) 15 (3), 1988
20 1988 Coherence limiting length scale in ultra high mobility GaAs/AlGaAs heterojunction wires JP Bird, ADC Grassie, M Lakrimi, KM Hutchings, P Meeson, JJ Harris, ...
Surface science 267 (1-3), 277-281, 1992
15 1992 Quantum size effects in GaAs-Ga1-xAlxAs heterojunction wires M Lakrimi, ADC Grassie, KM Hutchings, JJ Harris, CT Foxon
Semiconductor science and technology 4 (4), 313, 1989
14 1989 The fabrication of sub-micron width mesas in GaAs/Ga1-xAlxAs heterojunction material KM Hutchings, ADC Grassie, M Lakrimi, J Bird
Semiconductor science and technology 3 (10), 1057, 1988
7 1988 Transport properties of a gated, double quantum well HEMT JJ Harris, BJ Van der Velde, C Roberts, K Woodbridge, KM Hutchings
Semiconductor science and technology 6 (7), 616, 1991
6 1991 Zero-current voltage oscillations in GaAs-AlGaAs heterojunctions ADC Grassie, M Lakrimi, KM Hutchings, JJ Harris
Semiconductor science and technology 3 (10), 983, 1988
4 1988 Electron wave interference in ballistic and quasi-ballistic nanostructures K Ishibashi, JP Bird, DK Ferry, M Lakrimi, ADC Grassie, KM Hutchings, ...
Japanese journal of applied physics 34 (12S), 6966, 1995
3 1995 Magnetoconductivity probe of inhomogeneity in GaAs-GaAlAs heterojunctions M Lakrimi, ADC Grassie, KM Hutchings, JP Bird, JJ Harris, CT Foxon
Physica B: Condensed Matter 184 (1-4), 206-210, 1993
2 1993 Conductance Fluctuation Phenomena in Submicron Width High Mobility GaAs/AlGaAs Heterojunctions JP Bird, ADC Grassie, M Lakrimi, KM Hutchings, JJ Harris, CT Foxon
High Magnetic Fields in Semiconductor Physics II: Transport and Optics …, 1989
1989 Reduction and carburisation of iron ore in a fluidised bed KM Hutchings
University of Sussex, 1984
1984