GaAs interfacial self-cleaning by atomic layer deposition CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 92 (7), 2008
492 2008 Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics B Lee, SY Park, HC Kim, KJ Cho, EM Vogel, MJ Kim, RM Wallace, J Kim
Applied Physics Letters 92 (20), 2008
361 2008 Ozone adsorption on graphene: ab initio study and experimental validation G Lee, B Lee, J Kim, K Cho
arXiv preprint arXiv:0906.2243, 2009
216 2009 Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone S Jandhyala, G Mordi, B Lee, G Lee, C Floresca, PR Cha, J Ahn, ...
ACS nano 6 (3), 2722-2730, 2012
156 2012 Comparison of the sputter rates of oxide films relative to the sputter rate of DR Baer, MH Engelhard, AS Lea, P Nachimuthu, TC Droubay, J Kim, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 28 (5 …, 2010
152 2010 Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices B Lee, G Mordi, MJ Kim, YJ Chabal, EM Vogel, RM Wallace, KJ Cho, ...
Applied Physics Letters 97 (4), 2010
148 2010 Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 91 (16), 2007
127 2007 A novel thermally-stable zirconium amidinate ALD precursor for ZrO2 thin films B Lee, KJ Choi, A Hande, MJ Kim, RM Wallace, J Kim, Y Senzaki, ...
Microelectronic engineering 86 (3), 272-276, 2009
91 2009 Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone B Lee, TJ Park, A Hande, MJ Kim, RM Wallace, J Kim, X Liu, JH Yi, H Li, ...
Microelectronic engineering 86 (7-9), 1658-1661, 2009
59 2009 The effect of graphite surface condition on the composition of Al2O3 by atomic layer deposition A Pirkle, S McDonnell, B Lee, J Kim, L Colombo, RM Wallace
Applied Physics Letters 97 (8), 2010
55 2010 Effects of surface treatment on work function of ITO (Indium Tin Oxide) films C Kim, B Lee, HJ Yang, HM Lee, JG Lee, H Shin
Journal of the Korean Physical Society 47 (9), 417, 2005
45 2005 In situ study of surface reactions of atomic layer deposited LaxAl2− xO3 films on atomically clean In0. 2Ga0. 8As FS Aguirre-Tostado, M Milojevic, B Lee, J Kim, RM Wallace
Applied Physics Letters 93 (17), 2008
39 2008 Effects of O3 and H2O oxidants on C and N-related impurities in atomic-layer-deposited La2O3 films observed by in situ x-ray photoelectron spectroscopy TJ Park, P Sivasubramani, BE Coss, HC Kim, B Lee, RM Wallace, J Kim, ...
Applied Physics Letters 97 (9), 2010
29 2010 Atomic-layer-deposited Al2O3 as gate dielectrics for graphene-based devices B Lee, G Mordi, T Park, L Goux, YJ Chabal, K Cho, EM Vogel, M Kim, ...
ECS Transactions 19 (5), 225, 2009
19 2009 Measurement and visualization of doping profile in silicon using Kelvin probe force microscopy (KPFM) H Shin, B Lee, C Kim, H Park, DK Min, J Jung, S Hong, S Kim
Electronic Materials Letters 1 (2), 127-133, 2005
16 2005 Local work function measurements on various inorganic materials using Kelvin probe force spectroscopy CH Kim, CD Bae, KH Ryu, BK Lee, HJ Shin
Solid State Phenomena 124, 607-610, 2007
12 2007 ALD of LaHfOx nano-laminates for high-κ gate dielectric applications B Lee, A Hande, TJ Park, KJ Chung, J Ahn, M Rousseau, D Hong, H Li, ...
Microelectronic engineering 88 (12), 3385-3388, 2011
11 2011 Surface energy induced patterning of organic and inorganic materials on heterogeneous Si surfaces L Tao, A Crouch, F Yoon, BK Lee, JS Guthi, J Kim, J Gao, W Hu
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
10 2007 Piezoelectric effect in epitaxial PbZr1− xTixO3 thin films near morphotropic phase boundary region YK Kim, SS Kim, B Lee, H Shin, S Baik
Journal of materials research 20 (4), 787-790, 2005
9 2005 In situ electrical studies of ozone based atomic layer deposition on graphene S Jandhyala, G Mordi, B Lee, J Kim
ECS Transactions 45 (4), 39, 2012
8 2012