| Thickness-dependent Schottky barrier height of MoS2 field-effect transistors J Kwon†, JY Lee†, YJ Yu, CH Lee, X Cui, J Hone, GH Lee* Nanoscale 9 (18), 6151-6157, 2017 | 150 | 2017 |
| Horizontal-to-vertical transition of 2D layer orientation in low-temperature chemical vapor deposition-grown PtSe2 and its influences on electrical properties and device … SS Han, JH Kim, C Noh, JH Kim, E Ji, J Kwon, SM Yu, TJ Ko, E Okogbue, ... ACS Applied Materials & Interfaces 11 (14), 13598-13607, 2019 | 86 | 2019 |
| Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures J Son†, J Kwon†, SP Kim, Y Lv, J Yu, JY Lee, H Ryu, K Watanabe, ... Nature Communications 9 (1), 1-9, 2018 | 82 | 2018 |
| Artificial synaptic emulators based on MoS2 flash memory devices with double floating gates SG Yi, MU Park, SH Kim, CJ Lee, J Kwon, GH Lee, KH Yoo ACS Applied Materials & Interfaces 10 (37), 31480-31487, 2018 | 75 | 2018 |
| Thickness-independent semiconducting-to-metallic conversion in wafer-scale two-dimensional PtSe2 layers by plasma-driven chalcogen defect engineering MS Shawkat, J Gil, SS Han, TJ Ko, M Wang, D Dev, J Kwon, GH Lee, ... ACS Applied Materials & Interfaces 12 (12), 14341-14351, 2020 | 59 | 2020 |
| High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact D Seo, DY Lee, J Kwon, JJ Lee, T Taniguchi, K Watanabe, GH Lee, ... Applied Physics Letters 115 (1), 2019 | 40 | 2019 |
| van der Waals epitaxial growth of single crystal α-MoO3 layers on layered materials growth templates JH Kim†, JK Dash†, J Kwon, C Hyun, H Kim, E Ji, GH Lee 2D Materials 6 (1), 015016, 2018 | 36 | 2018 |
| Enhanced Photoluminescence of Multiple Two-Dimensional van der Waals Heterostructures Fabricated by Layer-by-Layer Oxidation of MoS2 S Kang†, YS Kim†, JH Jeong, J Kwon, JH Kim, Y Jung, JC Kim, B Kim, ... ACS Applied Materials & Interfaces 13 (1), 1245-1252, 2021 | 29 | 2021 |
| Ethanol-CVD growth of sub-mm single-crystal graphene on flat Cu surfaces A Gnisci, G Faggio, G Messina, J Kwon, JY Lee, GH Lee, T Dikonimos, ... The Journal of Physical Chemistry C 122 (50), 28830-28838, 2018 | 29 | 2018 |
| Tailoring surface properties via functionalized hydrofluorinated graphene compounds J Son, N Buzov, S Chen, D Sung, H Ryu, J Kwon, SP Kim, S Namiki, J Xu, ... Advanced Materials 31 (39), 1903424, 2019 | 28 | 2019 |
| All-2D ReS2 transistors with split gates for logic circuitry J Kwon, Y Shin, H Kwon, JY Lee, H Park, K Watanabe, T Taniguchi, J Kim, ... Scientific Reports 9 (1), 10354, 2019 | 26 | 2019 |
| Tailoring Single-and Double-Sided Fluorination of Bilayer Graphene via Substrate Interactions J Son, H Ryu, J Kwon, S Huang, J Yu, J Xu, K Watanabe, T Taniguchi, E Ji, ... Nano Letters 21 (2), 891-898, 2020 | 23 | 2020 |
| Interactions between primary neurons and graphene films with different structure and electrical conductivity A Capasso, J Rodrigues, M Moschetta, F Buonocore, G Faggio, ... Advanced Functional Materials 31 (11), 2005300, 2021 | 20 | 2021 |
| Tunable wettability of graphene through non-destructive hydrogenation and wettability-based patterning for bio-applications J Son†, JY Lee†, N Han, J Cha, J Choi, J Kwon, SW Nam, KH Yoo, ... Nano Letters 20 (8), 5625-5631, 2020 | 20 | 2020 |
| Amorphous Carbon Films for Electronic Applications IS Kim†, CE Shim†, SW Kim, CS Lee, J Kwon, KE Byun*, U Jeong* Advanced Materials, 2204912, 2022 | 17 | 2022 |
| Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography VL Nguyen, M Seol, J Kwon, EK Lee, WJ Jang, HW Kim, C Liang, ... Nature Electronics 6 (2), 146-153, 2023 | 14 | 2023 |
| Multioperation‐mode light‐emitting field‐effect transistors based on van der Waals heterostructure J Kwon, JC Shin, H Ryu, JY Lee, D Seo, K Watanabe, T Taniguchi, ... Advanced Materials 32 (43), 2003567, 2020 | 13 | 2020 |
| Phonon-assisted carrier transport through a lattice-mismatched interface HS Yoon†, J Oh†, JY Park†, JS Kang, J Kwon, T Cusati, G Fiori, ... NPG Asia Materials 11, 14, 2019 | 8 | 2019 |
| Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors H Ryu, DH Kim, J Kwon, SK Park, W Lee, H Seo, K Watanabe, ... Advanced Electronic Materials 8 (10), 2101370, 2022 | 7 | 2022 |
| Graphene Via Contact Architecture for Vertical Integration of vdW Heterostructure Devices Y Shin, J Kwon, Y Jeong, K Watanabe, T Taniguchi, S Im, GH Lee Small 18 (28), 2200882, 2022 | 7 | 2022 |
Gwan-Hyoung LeeProfessor, Materials Science and Engineering, Seoul National UniversityVerified email at snu.ac.kr
