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Joohwa Kim
Joohwa Kim
Apple, UCSD
Bestätigte E-Mail-Adresse bei ucsd.edu - Startseite
Titel
Zitiert von
Zitiert von
Jahr
A 40-Gb/s optical transceiver front-end in 45 nm SOI CMOS
J Kim, JF Buckwalter
IEEE Journal of Solid-State Circuits 47 (3), 615-626, 2012
1352012
Bandwidth enhancement with low group-delay variation for a 40-Gb/s transimpedance amplifier
J Kim, JF Buckwalter
IEEE Transactions on Circuits and Systems I: Regular Papers 57 (8), 1964-1972, 2010
1342010
A Q-band amplifier implemented with stacked 45-nm CMOS FETs
S Pornpromlikit, HT Dabag, B Hanafi, J Kim, LE Larson, JF Buckwalter, ...
2011 IEEE compound semiconductor integrated circuit symposium (CSICS), 1-4, 2011
742011
Staggered gain for 100+ GHz broadband amplifiers
J Kim, JF Buckwalter
IEEE Journal of Solid-State Circuits 46 (5), 1123-1136, 2011
602011
A 92 GHz bandwidth distributed amplifier in a 45 nm SOI CMOS technology
J Kim, JF Buckwalter
IEEE Microwave and Wireless Components Letters 21 (6), 329-331, 2011
522011
Q-Band and W-Band Power Amplifiers in 45-nm CMOS SOI
J Kim, H Dabag, P Asbeck, JF Buckwalter
Microwave Theory and Techniques, IEEE Transactions on 60 (6), 1870-1877, 2012
492012
A Switchless,-Band Bidirectional Transceiver in 0.12-m SiGe BiCMOS Technology
J Kim, JF Buckwalter
Solid-State Circuits, IEEE Journal of, 1-1, 2012
372012
A 45-GHz SiGe HBT amplifier at greater than 25% efficiency and 30 mW output power
HT Dabag, J Kim, LE Larson, JF Buckwalter, PM Asbeck
2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 25-28, 2011
282011
Cascaded constructive wave amplification
JF Buckwalter, J Kim
IEEE Transactions on Microwave Theory and Techniques 58 (3), 506-517, 2010
252010
A 26dB-gain 100GHz Si/SiGe cascaded constructive-wave amplifier
JF Buckwalter, J Kim
2009 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2009
142009
A 77-GHz to 90-GHz bidirectional amplifier for half-duplex front-ends
J Kim, M Parlak, JF Buckwalter
IEEE Custom Integrated Circuits Conference 2010, 1-4, 2010
122010
A DC-102GHz broadband amplifier in 0.12 µm SiGe BiCMOS
J Kim, JF Buckwalter
2009 IEEE Radio Frequency Integrated Circuits Symposium, 53-56, 2009
102009
A 9 mW, Q-Band direct-conversion I/Q modulator in SiGe BiCMOS process
AK Gupta, J Kim, P Asbeck, JF Buckwalter
IEEE microwave and wireless components letters 22 (6), 327-329, 2012
72012
A fully-integrated optical duobinary transceiver in a 130nm SOI CMOS technology
JF Buckwalter, J Kim, X Zheng, G Li, K Raj, A Krishnamoorthy
2011 IEEE Custom Integrated Circuits Conference (CICC), 1-4, 2011
72011
A fully integrated Q-band bidirectional transceiver in 0.12-µm SiGe BiCMOS technology
J Kim, JF Buckwalter
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 57-60, 2010
72010
A 1.1 THz Gain-Bandwidth W-Band Amplifier in a 0.12um Silicon Germanium BiCMOS Process
J Kim, JF Buckwalter
IEEE Microwave and Wireless Components Letters 20 (11), 625-627, 2010
32010
RFIC design for high-speed optical and multigigabit wireless communication systems
J Kim
UC San Diego, 2011
12011
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