| Device design assessment of 4H–SiC n-IGBT–A simulation study M Usman, M Nawaz Solid-state electronics 92, 5-11, 2014 | 47 | 2014 |
| Time-resolved luminescence studies of proton-implanted GaN A Pinos, S Marcinkevičius, M Usman, A Hallén Applied Physics Letters 95 (11), 2009 | 46 | 2009 |
| Toward the understanding of stacked Al-based high-k dielectrics for passivation of 4H-SiC devices M Usman, A Hallén, T Pilvi, A Schöner, M Leskelä Journal of The Electrochemical Society 158 (1), H75, 2010 | 34 | 2010 |
| Copper phthalocyanine and metal free phthalocyanine bulk heterojunction photodetector A Farooq, KS Karimov, N Ahmed, T Ali, MK Alamgir, M Usman Physica B: Condensed Matter 457, 17-21, 2015 | 31 | 2015 |
| Influence of annealing environment on the ALD-Al2O3/4H-SiC interface studied through XPS M Usman, M Arshad, SS Suvanam, A Hallén Journal of Physics D: Applied Physics 51, 105111, 2018 | 29 | 2018 |
| Radiation-Hard Dielectrics for 4H–SiC: A Comparison Between SiO2 and Al2O3 M Usman, A Hallén IEEE Electron Device Letters 32 (12), 1653-1655, 2011 | 24* | 2011 |
| Structural, optical, and electrical characteristics of AlN: Ho thin films irradiated with 700 keV protons M Usman, M Naeem, N ul Hassan, M Maqbool, I Ahmad, I Ahmad, ... Applied Surface Science 357, 179-183, 2015 | 23 | 2015 |
| HfO2/Al2O3 bilayered high-k dielectric for passivation and gate insulator in 4H-SiC devices M Usman, C Henkel, A Hallén ECS Journal of Solid State Science and Technology 2 (8), N3087, 2013 | 23 | 2013 |
| High-k Dielectrics for 4H-Silicon Carbide: Present Status and Future Perspective A Siddiqui, RY Khosa, M Usman Journal of Materials Chemistry C 9, 5055-5081, 2021 | 22 | 2021 |
| Low-temperature annealing of radiation-induced degradation in 4H-SiC bipolar junction transistors A Hallén, M Nawaz, C Zaring, M Usman, M Domeij, M Östling IEEE Electron Device Letters 31 (7), 707-709, 2010 | 22 | 2010 |
| Surface recombination investigation in thin 4H-SiC layers K Gulbinas, V Grivickas, HP Mahabadi, M Usman, A Hallen Materials Science 17 (2), 119-124, 2011 | 21 | 2011 |
| Passivation of SiC device surfaces by aluminum oxide A Hallén, M Usman, S Suvanam, C Henkel, D Martin, MK Linnarsson IOP Conference Series: Materials Science and Engineering 56 (1), 012007, 2014 | 18 | 2014 |
| Substitutional carbon doping of hexagonal multi-walled boron nitride nanotubes (h-MWBNNTs) via ion implantation I Ahmad, M Usman, S Rabab Naqvi, J Iqbal, L Bo, Y Long, CF Dee, A Baig Journal of nanoparticle research 16, 1-8, 2014 | 18 | 2014 |
| Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC SS Suvanam, M Usman, D Martin, MG Yazdi, M Linnarsson, A Tempez, ... Applied Surface Science 433, 108-115, 2018 | 17 | 2018 |
| Re-crystallization of ITO films after carbon irradiation M Usman, S Khan, M Khan, T Abbas Applied Surface Science 392, 863-866, 2017 | 17 | 2017 |
| Ion implantation induced nitrogen defects in GaN M Usman, A Hallén, A Nazir Journal of Physics D: Applied Physics 48 (45), 455107, 2015 | 17 | 2015 |
| Investigating Local Structure of Ion-Implanted (Ni2+) and Thermally Annealed Rock Salt CoO Film by EXAFS Simulation Using Evolutionary Algorithm LU Khan, N Jabeen, I Jabbar, S Jamil, A Kanwal, Z Akhtar, M Usman, ... ACS Applied Energy Materials 4, 2049−2055, 2021 | 16 | 2021 |
| Improving the quality of Al2O3/4H-SiC interface for device applications M Usman, SS Suvanam, MK Linnarsson, A Hallén Materials Science in Semiconductor Processing 81, 118-121, 2018 | 16 | 2018 |
| Position-dependent bulk traps and carrier compensation in 4H-SiC bipolar junction transistors M Usman, M Nawaz, A Hallen IEEE transactions on electron devices 60 (1), 178-185, 2012 | 16 | 2012 |
| Bandgap engineering of TiO2 nanoparticles through MeV Cu ions irradiation I Ahmad, M Usman, T Zhao, S Qayum, I Mahmood, A Mahmood, A Diallo, ... Arabian Journal of Chemistry 13 (1), 3344-3350, 2020 | 14 | 2020 |
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