The anisotropic band structure of layered In4Se3 (001) YB Losovyj, L Makinistian, EA Albanesi, AG Petukhov, J Liu, P Galiy, ...
Journal of applied physics 104 (8), 2008
52 2008 The electronic structure of surface chains in the layered semiconductor In4Se3 (100) YB Losovyj, M Klinke, E Cai, I Rodriguez, J Zhang, L Makinistian, ...
Applied Physics Letters 92 (12), 2008
32 2008 The interface microscopy and spectroscopy on the cleavage surfaces of the In4Se3 pure and copper-intercalated layered crystals PV Galiy, AV Musyanovych, YM Fiyala
Physica E: Low-dimensional Systems and Nanostructures 35 (1), 88-92, 2006
29 2006 Surface investigations of nanostructured porous silicon PV Galiy, TI Lesiv, LS Monastyrskii, TM Nenchuk, IB Olenych
Thin Solid Films 318 (1-2), 113-116, 1998
27 1998 Ab initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor L Makinistian, EA Albanesi, NVG Lemus, AG Petukhov, D Schmidt, ...
Physical Review B 81 (7), 075217, 2010
24 2010 Study of interface formation on the cleavage surfaces of A3 {B} 6 layered semiconductors PV Galiy, TM Nenchuk, JM Stakhira
Journal of Physics D: Applied Physics 34 (1), 18, 2001
24 2001 Surface termination and Schottky-barrier formation of In4Se3 (001) A Dhingra, PV Galiy, L Wang, NS Vorobeva, A Lipatov, A Torres, ...
Semiconductor Science and Technology 35 (6), 065009, 2020
23 2020 Tunable two-dimensional electron gas at the surface of thermoelectric material K Fukutani, T Sato, PV Galiy, K Sugawara, T Takahashi
Physical Review B 93 (20), 205156, 2016
20 2016 Anisotropic Properties of Quasi‐1D In4 Se3 : Mechanical Exfoliation, Electronic Transport, and Polarization‐Dependent Photoresponse NS Vorobeva, A Lipatov, A Torres, J Dai, J Abourahma, D Le, A Dhingra, ...
Advanced Functional Materials 31 (52), 2106459, 2021
17 2021 High-Resolution Angle-Resolved Photoemission Study of Quasi-One-Dimensional Semiconductor In4 Se3 K Fukutani, Y Miyata, I Matsuzaki, PV Galiy, PA Dowben, T Sato, ...
Journal of the Physical Society of Japan 84 (7), 074710, 2015
13 2015 Atomic force microscopy study of the cleavage surfaces of In4Se3 layered semiconductor crystal PV Galiy, TM Nenchuk, OR Dveriy, A Ciszewski, P Mazur, S Zuber
Physica E: Low-dimensional Systems and Nanostructures 41 (3), 465-469, 2009
13 2009 Auger electron spectroscopy studies of In4Se3 layered crystals PV Galiy, TM Nenchuk, JM Stakhira, YM Fiyala
Journal of electron spectroscopy and related phenomena 105 (1), 91-97, 1999
13 1999 The radiation defect accumulation in scintillative crystals of caesium halides under intense electron beam irradiation PV Galiy
Radiation Measurements 30 (1), 41-50, 1999
13 1999 The bulk band structure and inner potential of layered In4Se3 J Liu, YB Losovyj, T Komesu, PA Dowben, L Makinistian, EA Albanesi, ...
Applied surface science 254 (14), 4322-4325, 2008
12 2008 Structural and energy changes at the cleavage surfaces of In₄Se₃ layered crystals under interface formation PV Galiy, TM Nenchuk, YB Losovyj, YM Fiyala
Functional materials, 2008
12 2008 Excitonic ionizations of the electron centres in caesium iodide crystal and exoemission of electrons PV Galiy, OY Mel’nyk, OV Tsvetkova
Journal of luminescence 112 (1-4), 105-108, 2005
12 2005 Electron spectroscopy of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In4Se3 crystals PV Galiy, AV Musyanovych, TM Nenchuk
Journal of electron spectroscopy and related phenomena 142 (2), 121-128, 2005
11 2005 Electron spectroscopy of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In4Se3 crystals PV Galiy, AV Musyanovych, TM Nenchuk
Journal of electron spectroscopy and related phenomena 142 (2), 121-128, 2005
11 2005 Indium segregation to the selvedge of In4Se3 (001) A Dhingra, ZG Marzouk, E Mishra, PV Galiy, TM Nenchuk, PA Dowben
Physica B: Condensed Matter 593, 412280, 2020
10 2020 Electronic relaxations of radiative defects of the anion sublattice in caesium bromide crystals and exoemission of electrons P Galiy, O Mel'Nyk
Radiation effects and defects in solids 157 (6-12), 683-689, 2002
9 2002 