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Mike Krames
Mike Krames
Arkesso, LLC; ORCID 0000-0001-8545-851X
Bestätigte E-Mail-Adresse bei arkesso.com - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Status and future of high-power light-emitting diodes for solid-state lighting
MR Krames, OB Shchekin, R Mueller-Mach, GO Mueller, L Zhou, ...
Journal of display technology 3 (2), 160-175, 2007
24362007
Auger recombination in InGaN measured by photoluminescence
YC Shen, GO Mueller, S Watanabe, NF Gardner, A Munkholm, ...
Applied Physics Letters 91 (14), 2007
14032007
High-power AlGaInN flip-chip light-emitting diodes
JJ Wierer, DA Steigerwald, MR Krames, JJ O’shea, MJ Ludowise, ...
Applied Physics Letters 78 (22), 3379-3381, 2001
8422001
Highly efficient all‐nitride phosphor‐converted white light emitting diode
R Mueller‐Mach, G Mueller, MR Krames, HA Höppe, F Stadler, W Schnick, ...
physica status solidi (a) 202 (9), 1727-1732, 2005
6752005
High-power phosphor-converted light-emitting diodes based on III-nitrides
R Mueller-Mach, GO Mueller, MR Krames, T Trottier
IEEE Journal of Selected Topics in Quantum Electronics 8 (2), 339-345, 2002
6702002
High-power truncated-inverted-pyramid light-emitting diodes exhibiting % external quantum efficiency
MR Krames, M Ochiai-Holcomb, GE Höfler, C Carter-Coman, EI Chen, ...
Applied physics letters 75 (16), 2365-2367, 1999
6571999
Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕ cm2
NF Gardner, GO Müller, YC Shen, G Chen, S Watanabe, W Götz, ...
Applied Physics Letters 91 (24), 2007
5522007
InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
JJ Wierer, MR Krames, JE Epler, NF Gardner, MG Craford, JR Wendt, ...
Applied Physics Letters 84 (19), 3885-3887, 2004
5042004
Ordered interface texturing for a light emitting device
MR Krames, FA Kish Jr
US Patent 5,779,924, 1998
4771998
History of gallium–nitride-based light-emitting diodes for illumination
S Nakamura, MR Krames
Proceedings of the IEEE 101 (10), 2211-2220, 2013
4722013
Research challenges to ultra‐efficient inorganic solid‐state lighting
JM Phillips, ME Coltrin, MH Crawford, AJ Fischer, MR Krames, ...
Laser & Photonics Reviews 1 (4), 307-333, 2007
4652007
Luminescent ceramic for a light emitting device
GO Mueller, RB Mueller-Mach, MR Krames, PJ Schmidt, HH Bechtel, ...
US Patent 7,361,938, 2008
447*2008
High performance thin-film flip-chip InGaN–GaN light-emitting diodes
OB Shchekin, JE Epler, TA Trottier, T Margalith, DA Steigerwald, ...
Applied Physics Letters 89 (7), 2006
4322006
Phosphor-converted light emitting device
WD Collins III, MR Krames, GJ Verhoeckx, NJM Van Leth
US Patent 6,642,652, 2003
4272003
Carrier distribution in (0001) InGaN∕ GaN multiple quantum well light-emitting diodes
A David, MJ Grundmann, JF Kaeding, NF Gardner, TG Mihopoulos, ...
Applied Physics Letters 92 (5), 2008
4122008
III-Phospide and III-Arsenide flip chip light-emitting devices
MD Camras, DA Steigerwald, FM Steranka, MJ Ludowise, PS Martin, ...
US Patent 6,784,463, 2004
3942004
History, development, and applications of high-brightness visible light-emitting diodes
RD Dupuis, MR Krames
Journal of lightwave technology 26 (9), 1154-1171, 2008
3752008
Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
WD Collins III, MR Krames, GJ Verhoeckx, NJM van Leth
US Patent 6,576,488, 2003
3572003
High power LEDs–Technology status and market applications
FM Steranka, J Bhat, D Collins, L Cook, MG Craford, R Fletcher, ...
physica status solidi (a) 194 (2), 380-388, 2002
3192002
Polarized semiconductor light emitting device
MH Keuper, MR Krames, GO Mueller
US Patent 7,408,201, 2008
3152008
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