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Mike Krames
Mike Krames
Arkesso, LLC; ORCID 0000-0001-8545-851X
Bestätigte E-Mail-Adresse bei arkesso.com - Startseite
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Zitiert von
Zitiert von
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Status and future of high-power light-emitting diodes for solid-state lighting
MR Krames, OB Shchekin, R Mueller-Mach, GO Mueller, L Zhou, ...
Journal of display technology 3 (2), 160-175, 2007
24432007
Auger recombination in InGaN measured by photoluminescence
YC Shen, GO Mueller, S Watanabe, NF Gardner, A Munkholm, ...
Applied Physics Letters 91 (14), 2007
14112007
High-power AlGaInN flip-chip light-emitting diodes
JJ Wierer, DA Steigerwald, MR Krames, JJ O’shea, MJ Ludowise, ...
Applied Physics Letters 78 (22), 3379-3381, 2001
8542001
Highly efficient all‐nitride phosphor‐converted white light emitting diode
R Mueller‐Mach, G Mueller, MR Krames, HA Höppe, F Stadler, W Schnick, ...
physica status solidi (a) 202 (9), 1727-1732, 2005
6792005
High-power phosphor-converted light-emitting diodes based on III-nitrides
R Mueller-Mach, GO Mueller, MR Krames, T Trottier
IEEE Journal of Selected Topics in Quantum Electronics 8 (2), 339-345, 2002
6672002
High-power truncated-inverted-pyramid light-emitting diodes exhibiting % external quantum efficiency
MR Krames, M Ochiai-Holcomb, GE Höfler, C Carter-Coman, EI Chen, ...
Applied physics letters 75 (16), 2365-2367, 1999
6551999
Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕ cm2
NF Gardner, GO Müller, YC Shen, G Chen, S Watanabe, W Götz, ...
Applied Physics Letters 91 (24), 2007
5532007
InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
JJ Wierer, MR Krames, JE Epler, NF Gardner, MG Craford, JR Wendt, ...
Applied Physics Letters 84 (19), 3885-3887, 2004
5012004
History of gallium–nitride-based light-emitting diodes for illumination
S Nakamura, MR Krames
Proceedings of the IEEE 101 (10), 2211-2220, 2013
4832013
Ordered interface texturing for a light emitting device
MR Krames, FA Kish Jr
US Patent 5,779,924, 1998
4771998
Research challenges to ultra‐efficient inorganic solid‐state lighting
JM Phillips, ME Coltrin, MH Crawford, AJ Fischer, MR Krames, ...
Laser & Photonics Reviews 1 (4), 307-333, 2007
4672007
Luminescent ceramic for a light emitting device
GO Mueller, RB Mueller-Mach, MR Krames, PJ Schmidt, HH Bechtel, ...
US Patent 7,361,938, 2008
450*2008
Phosphor-converted light emitting device
WD Collins III, MR Krames, GJ Verhoeckx, NJM Van Leth
US Patent 6,642,652, 2003
4282003
High performance thin-film flip-chip InGaN–GaN light-emitting diodes
OB Shchekin, JE Epler, TA Trottier, T Margalith, DA Steigerwald, ...
Applied Physics Letters 89 (7), 2006
4232006
Carrier distribution in (0001) InGaN∕ GaN multiple quantum well light-emitting diodes
A David, MJ Grundmann, JF Kaeding, NF Gardner, TG Mihopoulos, ...
Applied Physics Letters 92 (5), 2008
4132008
III-Phospide and III-Arsenide flip chip light-emitting devices
MD Camras, DA Steigerwald, FM Steranka, MJ Ludowise, PS Martin, ...
US Patent 6,784,463, 2004
3992004
History, development, and applications of high-brightness visible light-emitting diodes
RD Dupuis, MR Krames
Journal of lightwave technology 26 (9), 1154-1171, 2008
3712008
Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
WD Collins III, MR Krames, GJ Verhoeckx, NJM van Leth
US Patent 6,576,488, 2003
3572003
High power LEDs–Technology status and market applications
FM Steranka, J Bhat, D Collins, L Cook, MG Craford, R Fletcher, ...
physica status solidi (a) 194 (2), 380-388, 2002
3212002
Polarized semiconductor light emitting device
MH Keuper, MR Krames, GO Mueller
US Patent 7,408,201, 2008
3172008
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