Mary Crawford
Mary Crawford
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Zitiert von
Zitiert von
LEDs for solid-state lighting: performance challenges and recent advances
MH Crawford
IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1028-1040, 2009
Effect of dislocation density on efficiency droop in light-emitting diodes
MF Schubert, S Chhajed, JK Kim, EF Schubert, DD Koleske, MH Crawford, ...
Applied Physics Letters 91 (23), 231114, 2007
Research challenges to ultra‐efficient inorganic solid‐state lighting
JM Phillips, ME Coltrin, MH Crawford, AJ Fischer, MR Krames, ...
Laser & Photonics Reviews 1 (4), 307-333, 2007
Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities
Q Dai, MF Schubert, MH Kim, JK Kim, EF Schubert, DD Koleske, ...
Applied Physics Letters 94 (11), 111109, 2009
AlGaN/GaN quantum well ultraviolet light emitting diodes
J Han, MH Crawford, RJ Shul, JJ Figiel, M Banas, L Zhang, YK Song, ...
Applied physics letters 73 (12), 1688-1690, 1998
Toward smart and ultra‐efficient solid‐state lighting
JY Tsao, MH Crawford, ME Coltrin, AJ Fischer, DD Koleske, ...
Advanced Optical Materials 2 (9), 809-836, 2014
Light‐extraction enhancement of GaInN light‐emitting diodes by graded‐refractive‐index indium tin oxide anti‐reflection contact
JK Kim, S Chhajed, MF Schubert, EF Schubert, AJ Fischer, MH Crawford, ...
Advanced materials 20 (4), 801-804, 2008
Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers
WW Chow, KD Choquette, MH Crawford, KL Lear, GR Hadley
IEEE Journal of Quantum Electronics 33 (10), 1810-1824, 1997
Graded band gap ohmic contact to p‐ZnSe
Y Fan, J Han, L He, J Saraie, RL Gunshor, M Hagerott, H Jeon, ...
Applied physics letters 61 (26), 3160-3162, 1992
Excitonic gain and laser emission in ZnSe-based quantum wells
J Ding, H Jeon, T Ishihara, M Hagerott, AV Nurmikko, H Luo, N Samarth, ...
Physical review letters 69 (11), 1707, 1992
The band-gap bowing of alloys
SR Lee, AF Wright, MH Crawford, GA Petersen, J Han, RM Biefeld
Applied physics letters 74 (22), 3344-3346, 1999
Nanocrystal-based light-emitting diodes utilizing high-efficiency nonradiative energy transfer for color conversion
M Achermann, MA Petruska, DD Koleske, MH Crawford, VI Klimov
Nano letters 6 (7), 1396-1400, 2006
Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
Q Dai, Q Shan, J Wang, S Chhajed, J Cho, EF Schubert, MH Crawford, ...
Applied Physics Letters 97 (13), 133507, 2010
Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
AJ Fischer, AA Allerman, MH Crawford, KHA Bogart, SR Lee, RJ Kaplar, ...
Applied Physics Letters 84 (17), 3394-3396, 2004
Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods
Y Xi, JQ Xi, T Gessmann, JM Shah, JK Kim, EF Schubert, AJ Fischer, ...
Applied physics letters 86 (3), 031907, 2005
Quasi-two-dimensional excitons in (Zn, Cd) Se/ZnSe quantum wells: Reduced exciton–LO-phonon coupling due to confinement effects
NT Pelekanos, J Ding, M Hagerott, AV Nurmikko, H Luo, N Samarth, ...
Physical Review B 45 (11), 6037, 1992
Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys
AA Allerman, MH Crawford, AJ Fischer, KHA Bogart, SR Lee, ...
Journal of crystal growth 272 (1-4), 227-241, 2004
Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays
Q Li, KR Westlake, MH Crawford, SR Lee, DD Koleske, JJ Figiel, ...
Optics express 19 (25), 25528-25534, 2011
(Zn, Cd) Se/ZnSe quantum-well lasers: excitonic gain in an inhomogeneously broadened quasi-two-dimensional system
J Ding, M Hagerott, T Ishihara, H Jeon, AV Nurmikko
Physical Review B 47 (16), 10528, 1993
The effect of on morphology evolution during GaN metalorganic chemical vapor deposition
J Han, TB Ng, RM Biefeld, MH Crawford, DM Follstaedt
Applied Physics Letters 71 (21), 3114-3116, 1997
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