Suzanne Mohney
Suzanne Mohney
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN
BP Luther, SE Mohney, TN Jackson, M Asif Khan, Q Chen, JW Yang
Applied physics letters 70 (1), 57-59, 1997
X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride
SD Wolter, BP Luther, DL Waltemyer, C Önneby, SE Mohney, RJ Molnar
Applied Physics Letters 70 (16), 2156-2158, 1997
Fabrication of micromechanical devices from polysilicon films with smooth surfaces
H Guckel, JJ Sniegowski, TR Christenson, S Mohney, TF Kelly
Sensors and Actuators 20 (1-2), 117-122, 1989
High temperature Pt Schottky diode gas sensors on n-type GaN
BP Luther, SD Wolter, SE Mohney
Sensors and Actuators B: Chemical 56 (1-2), 164-168, 1999
Bright and color-saturated emission from blue light-emitting diodes based on solution-processed colloidal nanocrystal quantum dots
Z Tan, F Zhang, T Zhu, J Xu, AY Wang, JD Dixon, L Li, Q Zhang, ...
Nano letters 7 (12), 3803-3807, 2007
Employing heavy metal-free colloidal quantum dots in solution-processed white light-emitting diodes
Y Zhang, C Xie, H Su, J Liu, S Pickering, Y Wang, WW Yu, J Wang, ...
Nano letters 11 (2), 329-332, 2011
Near‐band‐edge electroluminescence from heavy‐metal‐free colloidal quantum dots
Z Tan, Y Zhang, C Xie, H Su, J Liu, C Zhang, N Dellas, SE Mohney, ...
Advanced materials 23 (31), 3553-3558, 2011
Measuring the specific contact resistance of contacts to semiconductor nanowires
SE Mohney, Y Wang, MA Cabassi, KK Lew, S Dey, JM Redwing, ...
Solid-state electronics 49 (2), 227-232, 2005
Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts
A Agrawal, J Lin, M Barth, R White, B Zheng, S Chopra, S Gupta, K Wang, ...
Applied Physics Letters 104 (11), 112101, 2014
Diameter‐Controlled Synthesis of Silicon Nanowires Using Nanoporous Alumina Membranes
TE Bogart, S Dey, KK Lew, SE Mohney, JM Redwing
Advanced Materials 17 (1), 114-117, 2005
Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to -type GaN
BP Luther, JM DeLucca, SE Mohney, RF Karlicek Jr
Applied physics letters 71 (26), 3859-3861, 1997
Titanium and aluminum-titanium ohmic contacts to p-type SiC
J Crofton, L Beyer, JR Williams, ED Luckowski, SE Mohney, JM Delucca
Solid-State Electronics 41 (11), 1725-1729, 1997
Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC
J Crofton, SE Mohney, JR Williams, T Isaacs-Smith
Solid-State Electronics 46 (1), 109-113, 2002
Influence of oxygen on the activation of p-type GaN
BA Hull, SE Mohney, HS Venugopalan, JC Ramer
Applied Physics Letters 76 (16), 2271-2273, 2000
Fabrication and electrical properties of Si nanowires synthesized by al catalyzed vapor− liquid− solid growth
Y Ke, X Weng, JM Redwing, CM Eichfeld, TR Swisher, SE Mohney, ...
Nano letters 9 (12), 4494-4499, 2009
Mist fabrication of light emitting diodes with colloidal nanocrystal quantum dots
T Zhu, K Shanmugasundaram, SC Price, J Ruzyllo, F Zhang, J Xu, ...
Applied Physics Letters 92 (2), 023111, 2008
An investigation into the early stages of oxide growth on gallium nitride
SD Wolter, JM DeLucca, SE Mohney, RS Kern, CP Kuo
Thin Solid Films 371 (1-2), 153-160, 2000
Interfacial reactions between nickel thin films and GaN
HS Venugopalan, SE Mohney, BP Luther, SD Wolter, JM Redwing
Journal of applied physics 82 (2), 650-654, 1997
V/Al/Pt/Au Ohmic contact to n-AlGaN/GaN heterostructures
KO Schweitz, PK Wang, SE Mohney, D Gotthold
Applied physics letters 80 (11), 1954-1956, 2002
Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphology and thermal stability
JS Kwak, SE Mohney, JY Lin, RS Kern
Semiconductor science and technology 15 (7), 756, 2000
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20