| Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in … Z Li, J Waldron, T Detchprohm, C Wetzel, RF Karlicek Jr, TP Chow Applied Physics Letters 102 (19), 192107, 2013 | 148 | 2013 |
| Enhancement-mode GaN Hybrid MOS-HEMTs with Ron, sp of 20 mΩ-cm2 W Huang, Z Li, TP Chow, Y Niiyama, T Nomura, S Yoshida Power Semiconductor Devices and IC's, 2008. ISPSD'08. 20th International …, 2008 | 90* | 2008 |
| Design and simulation of 5–20-kV GaN enhancement-mode vertical superjunction HEMT Z Li, TP Chow IEEE Transactions on Electron Devices 60 (10), 3230-3237, 2013 | 72 | 2013 |
| Sidewall dominated characteristics on fin-gate AlGaN/GaN MOS-channel-HEMTs S Takashima, Z Li, TP Chow IEEE Transactions on Electron Devices 60 (10), 3025-3031, 2013 | 65 | 2013 |
| Impact of annealing on ALD Al2O3 gate dielectric for GaN MOS devices T Marron, S Takashima, Z Li, TP Chow physica status solidi (c) 9 (3‐4), 907-910, 2012 | 55 | 2012 |
| Planar triple-implanted JFET A Bhalla, Z Li US Patent App. 10/121,907, 2018 | 54* | 2018 |
| Comparison of 600V Si, SiC and GaN Power Devices S Chowdhury, Z Stum, ZD Li, K Ueno, TP Chow Materials Science Forum 778, 971-974, 2014 | 44 | 2014 |
| Channel scaling of hybrid GaN MOS-HEMTs Z Li, TP Chow Solid-State Electronics 56 (1), 111-115, 2011 | 30 | 2011 |
| Enhancement-mode GaN hybrid MOS-HEMTs with breakdown voltage of 1300V K Tang, Z Li, TP Chow, Y Niiyama, T Nomura, S Yoshida 2009 21st International Symposium on Power Semiconductor Devices & IC's, 279-282, 2009 | 27 | 2009 |
| Metal–Oxide–Semiconductor Interface and Dielectric Properties of Atomic Layer Deposited SiO2 on GaN S Takashima, Z Li, TP Chow Japanese Journal of Applied Physics 52 (8S), 08JN24, 2013 | 24 | 2013 |
| Trench vertical JFET with ladder termination Z Li, A Bhalla US Patent App. 10/050,154, 2018 | 22* | 2018 |
| Avalanche breakdown design parameters in GaN Z Li, V Pala, TP Chow Japanese Journal of Applied Physics 52 (8S), 08JN05, 2013 | 22 | 2013 |
| USCi SiC JFET Cascode and Super Cascode Technologies Z Li, A Bhalla PCIM Asia 2018; International Exhibition and Conference for Power …, 2018 | 21 | 2018 |
| High voltage normally-off GaN MOSC-HEMTs on silicon substrates for power switching applications Z Li, J Waldron, R Dayal, L Parsa, M Hella, TP Chow 2012 24th International Symposium on Power Semiconductor Devices and ICs, 45-48, 2012 | 19 | 2012 |
| Recent Advances in High-Voltage GaN MOS-Gated Transistors for Power Electronics Applications TP Chow, Z Li GaN and ZnO-based Materials and Devices, 239-250, 2012 | 18 | 2012 |
| Drift region optimization in high‐voltage GaN MOS‐gated HEMTs Z Li, TP Chow physica status solidi (c) 8 (7‐8), 2436-2438, 2011 | 13 | 2011 |
| Comparative study of 4H‐SiC and 2H‐GaN MOS capacitors and FETs TP Chow, H Naik, Z Li physica status solidi (a) 206 (10), 2478-2486, 2009 | 13 | 2009 |
| Design of GaN and SiC 5–20kV vertical superjunction structures Z Li, H Naik, TP Chow Lester Eastman Conference on High Performance Devices (LEC), 2012, 1-4, 2012 | 10 | 2012 |
| Over 1000V/30mA operation GaN-on-Si MOSFETs fabricated on Si substrates Y Niiyama, Z Li, TP Chow, J Li, T Nomura, S Kato Solid-State Electronics 56 (1), 73-78, 2011 | 10 | 2011 |
| Transistor M Sugimoto, TSP Chow, Z Li, T Kachi, T Uesugi US Patent 8,188,514, 2012 | 7 | 2012 |
T. Paul ChowProfessor, Rensselaer Polytechnic InstituteBestätigte E-Mail-Adresse bei rpi.edu
