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Zhongda Li
Zhongda Li
United Silicon Carbide, Inc.
Bestätigte E-Mail-Adresse bei unitedsic.com
Titel
Zitiert von
Zitiert von
Jahr
Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in …
Z Li, J Waldron, T Detchprohm, C Wetzel, RF Karlicek Jr, TP Chow
Applied Physics Letters 102 (19), 192107, 2013
1282013
Enhancement-mode GaN Hybrid MOS-HEMTs with Ron, sp of 20 mΩ-cm2
W Huang, Z Li, TP Chow, Y Niiyama, T Nomura, S Yoshida
Power Semiconductor Devices and IC's, 2008. ISPSD'08. 20th International …, 2008
85*2008
Design and simulation of 5–20-kV GaN enhancement-mode vertical superjunction HEMT
Z Li, TP Chow
IEEE Transactions on Electron Devices 60 (10), 3230-3237, 2013
632013
Sidewall dominated characteristics on fin-gate AlGaN/GaN MOS-channel-HEMTs
S Takashima, Z Li, TP Chow
IEEE Transactions on Electron Devices 60 (10), 3025-3031, 2013
552013
Planar triple-implanted JFET
A Bhalla, Z Li
US Patent App. 10/121,907, 2018
53*2018
Impact of annealing on ALD Al2O3 gate dielectric for GaN MOS devices
T Marron, S Takashima, Z Li, TP Chow
physica status solidi (c) 9 (3‐4), 907-910, 2012
512012
Comparison of 600V Si, SiC and GaN Power Devices
S Chowdhury, Z Stum, ZD Li, K Ueno, TP Chow
Materials Science Forum 778, 971-974, 2014
362014
Channel scaling of hybrid GaN MOS-HEMTs
Z Li, TP Chow
Solid-State Electronics 56 (1), 111-115, 2011
282011
Enhancement-mode GaN hybrid MOS-HEMTs with breakdown voltage of 1300V
K Tang, Z Li, TP Chow, Y Niiyama, T Nomura, S Yoshida
2009 21st International Symposium on Power Semiconductor Devices & IC's, 279-282, 2009
252009
Trench vertical JFET with ladder termination
Z Li, A Bhalla
US Patent App. 10/050,154, 2018
21*2018
Avalanche breakdown design parameters in GaN
Z Li, V Pala, TP Chow
Japanese Journal of Applied Physics 52 (8S), 08JN05, 2013
212013
High voltage normally-off GaN MOSC-HEMTs on silicon substrates for power switching applications
Z Li, J Waldron, R Dayal, L Parsa, M Hella, TP Chow
2012 24th International Symposium on Power Semiconductor Devices and ICs, 45-48, 2012
182012
Metal–Oxide–Semiconductor Interface and Dielectric Properties of Atomic Layer Deposited SiO2 on GaN
S Takashima, Z Li, TP Chow
Japanese Journal of Applied Physics 52 (8S), 08JN24, 2013
172013
Recent Advances in High-Voltage GaN MOS-Gated Transistors for Power Electronics Applications
TP Chow, Z Li
GaN and ZnO-based Materials and Devices, 239-250, 2012
172012
USCi SiC JFET Cascode and Super Cascode Technologies
Z Li, A Bhalla
PCIM Asia 2018; International Exhibition and Conference for Power …, 2018
132018
Comparative study of 4H‐SiC and 2H‐GaN MOS capacitors and FETs
TP Chow, H Naik, Z Li
physica status solidi (a) 206 (10), 2478-2486, 2009
132009
Drift region optimization in high‐voltage GaN MOS‐gated HEMTs
Z Li, TP Chow
physica status solidi (c) 8 (7‐8), 2436-2438, 2011
122011
Over 1000V/30mA operation GaN-on-Si MOSFETs fabricated on Si substrates
Y Niiyama, Z Li, TP Chow, J Li, T Nomura, S Kato
Solid-State Electronics 56 (1), 73-78, 2011
92011
Design of GaN and SiC 5–20kV vertical superjunction structures
Z Li, H Naik, TP Chow
Lester Eastman Conference on High Performance Devices (LEC), 2012, 1-4, 2012
82012
Transistor
M Sugimoto, TSP Chow, Z Li, T Kachi, T Uesugi
US Patent 8,188,514, 2012
72012
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