S.S. Lau
S.S. Lau
Professor of ECE , UCSD
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Electronic materials science: for integrated circuits in Si and GaAs
JW Mayer, SS Lau
Prentice Hall, 1990
Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
ET Yu, GJ Sullivan, PM Asbeck, CD Wang, D Qiao, SS Lau
Applied Physics Letters 71 (19), 2794-2796, 1997
A review of the metal–GaN contact technology
QZ Liu, SS Lau
Solid-State Electronics 42 (5), 677-691, 1998
Formation and characterization of transition-metal silicides
MA Nicolet, SS Lau
VLSI Electronics Microstructure Science 6, 329-464, 1983
Piezoelectric charge densities in AlGaN/GaN HFETs
PM Asbeck, ET Yu, SS Lau, GJ Sullivan, J Van Hove, J Redwing
Electronics letters 33 (14), 1230-1231, 1997
Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures
JW Mayer, BY Tsaur, SS Lau, LS Hung
Nuclear Instruments and Methods 182, 1-13, 1981
Implanted noble gas atoms as diffusion markers in silicide formation
WK Chu, SS Lau, JW Mayer, H Müller, KN Tu
Thin Solid Films 25 (2), 393-402, 1975
Spontaneous and piezoelectric polarization effects in III–V nitride heterostructures
ET Yu, XZ Dang, PM Asbeck, SS Lau, GJ Sullivan
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999
VLSI Electronics: Microstructure Science
MA Nicolet, SS Lau, NG Einspruch, GB Larrabee
Materials and process characterization 6, 1983
Structural difference rule for amorphous alloy formation by ion mixing
BX Liu, WL Johnson, MA Nicolet, SS Lau
Applied Physics Letters 42 (1), 45-47, 1983
Mechanically induced Si layer transfer in hydrogen-implanted Si wafers
K Henttinen, I Suni, SS Lau
Applied Physics Letters 76 (17), 2370-2372, 2000
Interactions in the Co/Si thin‐film system. I. Kinetics
SS Lau, JW Mayer, KN Tu
Journal of Applied Physics 49 (7), 4005-4010, 1978
Nonalloyed ohmic contacts to n‐GaAs by solid‐phase epitaxy of Ge
ED Marshall, B Zhang, LC Wang, PF Jiao, WX Chen, T Sawada, SS Lau, ...
Journal of applied physics 62 (3), 942-947, 1987
Salicidation process using NiSi and its device application
F Deng, RA Johnson, PM Asbeck, SS Lau, WB Dubbelday, T Hsiao, ...
Journal of applied physics 81 (12), 8047-8051, 1997
Transfer of patterned ion-cut silicon layers
CH Yun, AB Wengrow, NW Cheung, Y Zheng, RJ Welty, ZF Guan, ...
Applied Physics Letters 73 (19), 2772-2774, 1998
The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes
LS Yu, QZ Liu, QJ Xing, DJ Qiao, SS Lau, J Redwing
Journal of applied physics 84 (4), 2099-2104, 1998
Characterization of low-temperature processed single-crystalline silicon thin-film transistor on glass
X Shi, K Henttinen, T Suni, I Suni, SS Lau, M Wong
IEEE Electron Device Letters 24 (9), 574-576, 2003
Cold ion-cutting of hydrogen implanted Si
K Henttinen, T Suni, A Nurmela, I Suni, SS Lau, T Höchbauer, M Nastasi, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002
Comparison of thermally and mechanically induced Si layer transfer in hydrogen-implanted Si wafers
T Höchbauer, A Misra, M Nastasi, K Henttinen, T Suni, I Suni, SS Lau, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction
D Qiao, LS Yu, SS Lau, JM Redwing, JY Lin, HX Jiang
Journal of Applied Physics 87 (2), 801-804, 2000
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